Shuai ZHANG

Person

Hsinchu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device having a thermal contact and method of making
- Patent number 12,142,542
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jian Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a semiconductor device having a thermal contact
- Patent number 12,094,799
- Issue date Sep 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jian Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a super junction structure and super juncti...
- Patent number 12,040,358
- Issue date Jul 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shuai Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making semiconductor device having buried bias pad
- Patent number 11,973,083
- Issue date Apr 30, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Jian Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thermal substrate contact
- Patent number 11,862,527
- Issue date Jan 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jian Wu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF MAKING SEMICONDUCTOR DEVICE HAVING BURIED BIAS PAD
- Publication number 20230395606
- Publication date Dec 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jian WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER JUNCTION STRUCTURE
- Publication number 20230387196
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shuai ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A THERMAL CONTACT AND METHOD OF MAKING
- Publication number 20230386958
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jian WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING A SEMICONDUCTOR DEVICE HAVING A THERMAL CONTACT
- Publication number 20220384296
- Publication date Dec 1, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jian WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING SEMICONDUCTOR DEVICE HAVING BURIED BIAS PAD
- Publication number 20220271058
- Publication date Aug 25, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jian WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THERMAL SUBSTRATE CONTACT
- Publication number 20220165637
- Publication date May 26, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jian WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SUPER JUNCTION STRUCTURE AND SUPER JUNCTI...
- Publication number 20220069074
- Publication date Mar 3, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shuai ZHANG
- H01 - BASIC ELECTRIC ELEMENTS

Shuai ZHANG

Person

Patents Grantslast 30 patents

Semiconductor device having a thermal contact and method of making

Method of making a semiconductor device having a thermal contact

Method of manufacturing a super junction structure and super juncti...

Method of making semiconductor device having buried bias pad

Thermal substrate contact

Patents Applicationslast 30 patents

METHOD OF MAKING SEMICONDUCTOR DEVICE HAVING BURIED BIAS PAD

SUPER JUNCTION STRUCTURE

SEMICONDUCTOR DEVICE HAVING A THERMAL CONTACT AND METHOD OF MAKING

METHOD OF MAKING A SEMICONDUCTOR DEVICE HAVING A THERMAL CONTACT

METHOD OF MAKING SEMICONDUCTOR DEVICE HAVING BURIED BIAS PAD

THERMAL SUBSTRATE CONTACT

METHOD OF MANUFACTURING A SUPER JUNCTION STRUCTURE AND SUPER JUNCTI...