Shuangshuang PENG

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Wuhan, CN

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Patents Grantslast 30 patents

Information Patent Grant
Method for forming three-dimensional memory device with sacrificial...
- Patent number 11,937,427
- Issue date Mar 19, 2024
- Yangtze Memory Technologies Co., Ltd.
- Shuangshuang Peng
Information Patent Grant
Three-dimensional memory device with reduced local stress
- Patent number 11,800,707
- Issue date Oct 24, 2023
- Yangtze Memory Technologies Co., Ltd.
- Shuangshuang Peng
Information Patent Grant
Memory device and hybrid spacer thereof
- Patent number 11,626,412
- Issue date Apr 11, 2023
- Yangtze Memory Technologies Co., Ltd.
- Liheng Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and hybrid spacer thereof
- Patent number 11,469,240
- Issue date Oct 11, 2022
- Yangtze Memory Technologies Co., Ltd.
- Liheng Liu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MEMORY DEVICE AND HYBRID SPACER THEREOF
- Publication number 20220093622
- Publication date Mar 24, 2022
- Yangtze Memory Technologies Co., Ltd.
- Liheng LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20210305274
- Publication date Sep 30, 2021
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Shuangshuang Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20210305277
- Publication date Sep 30, 2021
- Yangtze Memory Technologies Co., Ltd.
- Shuangshuang Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND HYBRID SPACER THEREOF
- Publication number 20210159236
- Publication date May 27, 2021
- Yangtze Memory Technologies Co., Ltd.
- Liheng LIU
- H01 - BASIC ELECTRIC ELEMENTS