Shuhei Higashihara

Person

Nagoya-City, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Phosphor element and illumination device
- Patent number 10,859,747
- Issue date Dec 8, 2020
- NGK Insulators, Ltd.
- Jungo Kondo
- G02 - OPTICS
Information Patent Grant
Method and device for producing a group 13 element nitride crystal...
- Patent number 10,190,233
- Issue date Jan 29, 2019
- NGK Insulators, Ltd.
- Suguru Noguchi
- C07 - ORGANIC CHEMISTRY
Information Patent Grant
Method for producing nitride of group-13 element, and melt composition
- Patent number 10,156,022
- Issue date Dec 18, 2018
- NGK Insulators, Ltd.
- Takayuki Hirao
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing nitride crystal
- Patent number 10,041,186
- Issue date Aug 7, 2018
- NGK Insulators, Ltd.
- Katsuhiro Imai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing gallium nitride layer and seed crystal substra...
- Patent number 8,795,431
- Issue date Aug 5, 2014
- NGK Insulators, Ltd.
- Katsuhiro Imai
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for growing single crystal of group III metal nitride and re...
- Patent number 8,568,532
- Issue date Oct 29, 2013
- NGK Insulators, Ltd.
- Makoto Iwai
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for producing group III nitride semiconductor
- Patent number 8,501,141
- Issue date Aug 6, 2013
- Toyoda Gosei Co., Ltd.
- Takayuki Sato
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single crystal growing method
- Patent number 7,842,133
- Issue date Nov 30, 2010
- NGK Insulators, Ltd.
- Makoto Iwai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process and apparatus for producing nitride single crystal
- Patent number 7,833,347
- Issue date Nov 16, 2010
- NGK Insulators, Ltd.
- Makoto Iwai
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Crystal growing apparatus
- Patent number 7,708,833
- Issue date May 4, 2010
- Toyoda Gosei Co., Ltd.
- Shiro Yamazaki
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC

Patents Applicationslast 30 patents

Information Patent Application
Method of producing substrates including gallium nitride
- Publication number 20200411718
- Publication date Dec 31, 2020
- NGK Insulators, Ltd.
- Shuhei Higashihara
- C30 - CRYSTAL GROWTH
Information Patent Application
OPTICAL COMPONENT
- Publication number 20190309936
- Publication date Oct 10, 2019
- NGK Insulators, Ltd.
- Jungo KONDO
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Application
PHOSPHOR ELEMENT AND ILLUMINATION DEVICE
- Publication number 20190310408
- Publication date Oct 10, 2019
- NGK Insulators, Ltd.
- Jungo KONDO
- G02 - OPTICS
Information Patent Application
Growing Method and Device for Group 13 Element Nitride Crystal
- Publication number 20170283983
- Publication date Oct 5, 2017
- NGK Insulators, Ltd.
- Suguru Noguchi
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Producing Nitride Crystal
- Publication number 20160355945
- Publication date Dec 8, 2016
- NGK Insulators, Ltd.
- Katsuhiro Imai
- C30 - CRYSTAL GROWTH
Information Patent Application
Substrates Including Gallium Nitride Layers and a Method of Produci...
- Publication number 20160300980
- Publication date Oct 13, 2016
- NGK Insulators, Ltd.
- Shuhei Higashihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Producing Nitride of Group-13 Element, and Melt Composition
- Publication number 20160168749
- Publication date Jun 16, 2016
- NGK Insulators, Ltd.
- Takayuki Hirao
- C30 - CRYSTAL GROWTH
Information Patent Application
Substrates Including Gallium Nitride Layers and a Method of Produci...
- Publication number 20150303066
- Publication date Oct 22, 2015
- NGK Insulators, Ltd.
- Shuhei Higashihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for Producing Group 13 Metal Nitride, and Seed Crystal Subs...
- Publication number 20140026809
- Publication date Jan 30, 2014
- NGK Insulators, Ltd.
- Makoto Iwai
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Producing Gallium Nitride Layer and Seed Crystal Substra...
- Publication number 20140014028
- Publication date Jan 16, 2014
- NGK Insulators, Ltd.
- Katsuhiro Imai
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR GROWING SINGLE CRYSTAL OF GROUP III METAL NITRIDE AND RE...
- Publication number 20120137961
- Publication date Jun 7, 2012
- Makoto Iwai
- C30 - CRYSTAL GROWTH
Information Patent Application
REACTION VESSEL FOR GROWING SINGLE CRYSTAL AND METHOD FOR GROWING S...
- Publication number 20110259261
- Publication date Oct 27, 2011
- NGK Insulators, Ltd.
- Makoto IWAI
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for producing group III nitride semiconductor
- Publication number 20100247418
- Publication date Sep 30, 2010
- Toyoda Gosei Co., Ltd.
- Takayuki Sato
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS AND APPARATUS FOR PRODUCING NITRIDE SINGLE CRYSTAL
- Publication number 20090013924
- Publication date Jan 15, 2009
- NGK Insulators, Ltd.
- Makoto Iwai
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE CRYSTAL GROWING METHOD
- Publication number 20090000538
- Publication date Jan 1, 2009
- NGK Insulators, Ltd.
- Makoto Iwai
- C30 - CRYSTAL GROWTH
Information Patent Application
Crystal growing apparatus
- Publication number 20080223288
- Publication date Sep 18, 2008
- Toyoda Gosei Co., Ltd.
- Shiro Yamazaki
- C30 - CRYSTAL GROWTH

Shuhei Higashihara

Person

Patents Grantslast 30 patents

Phosphor element and illumination device

Method and device for producing a group 13 element nitride crystal...

Method for producing nitride of group-13 element, and melt composition

Method for producing nitride crystal

Method for producing gallium nitride layer and seed crystal substra...

Method for growing single crystal of group III metal nitride and re...

Method for producing group III nitride semiconductor

Single crystal growing method

Process and apparatus for producing nitride single crystal

Crystal growing apparatus

Patents Applicationslast 30 patents

Method of producing substrates including gallium nitride

OPTICAL COMPONENT

PHOSPHOR ELEMENT AND ILLUMINATION DEVICE

Growing Method and Device for Group 13 Element Nitride Crystal

Method for Producing Nitride Crystal

Substrates Including Gallium Nitride Layers and a Method of Produci...

Method for Producing Nitride of Group-13 Element, and Melt Composition

Substrates Including Gallium Nitride Layers and a Method of Produci...

Process for Producing Group 13 Metal Nitride, and Seed Crystal Subs...

Method for Producing Gallium Nitride Layer and Seed Crystal Substra...

METHOD FOR GROWING SINGLE CRYSTAL OF GROUP III METAL NITRIDE AND RE...

REACTION VESSEL FOR GROWING SINGLE CRYSTAL AND METHOD FOR GROWING S...

Method for producing group III nitride semiconductor

PROCESS AND APPARATUS FOR PRODUCING NITRIDE SINGLE CRYSTAL

SINGLE CRYSTAL GROWING METHOD

Crystal growing apparatus