Shuichi Kubo

Person

Ushiku, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Self-standing GaN substrate, GaN crystal, method for producing GaN...
- Patent number 12,107,129
- Issue date Oct 1, 2024
- Mitsubishi Chemical Corporation
- Satoru Nagao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride substrate and manufacturing method of nitride semic...
- Patent number 11,670,687
- Issue date Jun 6, 2023
- Mitsubishi Chemical Corporation
- Yusuke Tsukada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-standing GaN substrate, GaN crystal, method for producing GaN...
- Patent number 11,664,428
- Issue date May 30, 2023
- Mitsubishi Chemical Corporation
- Satoru Nagao
- C30 - CRYSTAL GROWTH
Information Patent Grant
Self-standing GaN substrate, GaN crystal, method for producing GaN...
- Patent number 11,038,024
- Issue date Jun 15, 2021
- MITSUBISHI CHEMICAL CORPORATION
- Satoru Nagao
- C30 - CRYSTAL GROWTH
Information Patent Grant
Self-standing GaN substrate, GaN crystal, method for producing GaN...
- Patent number 11,031,475
- Issue date Jun 8, 2021
- MITSUBISHI CHEMICAL CORPORATION
- Satoru Nagao
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gallium nitride substrate and manufacturing method of nitride semic...
- Patent number 10,734,485
- Issue date Aug 4, 2020
- Mitsubishi Chemical Corporation
- Yusuke Tsukada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Periodic table group 13 metal nitride crystals and method for manuf...
- Patent number 10,570,530
- Issue date Feb 25, 2020
- Mitsubishi Chemical Corporation
- Yuuki Enatsu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Self-standing GaN substrate, GaN crystal, method for producing GaN...
- Patent number 10,475,887
- Issue date Nov 12, 2019
- MITSUBISHI CHEMICAL CORPORATION
- Satoru Nagao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Periodic table group 13 metal nitride crystals and method for manuf...
- Patent number 10,023,976
- Issue date Jul 17, 2018
- Mitsubishi Chemical Corporation
- Yuuki Enatsu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Periodic table group 13 metal nitride crystals and method for manuf...
- Patent number 9,840,791
- Issue date Dec 12, 2017
- MITSUBISHI CHEMICAL CORPORATION
- Yuuki Enatsu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gallium nitride substrate and manufacturing method of nitride semic...
- Patent number 9,673,046
- Issue date Jun 6, 2017
- Mitsubishi Chemical Corporation
- Yusuke Tsukada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitride semiconductor crystal and its production method
- Patent number 8,545,626
- Issue date Oct 1, 2013
- Mitsubishi Chemical Corporation
- Kenji Fujito
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Group III nitride semiconductor substrate and method for cleaning t...
- Patent number 8,022,413
- Issue date Sep 20, 2011
- Misubishi Chemical Corporation
- Kenji Fujito
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III nitride semiconductor substrate and method for cleaning t...
- Patent number 7,928,446
- Issue date Apr 19, 2011
- Mitsubishi Chemical Corporation
- Kenji Fujito
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...
- Publication number 20230253461
- Publication date Aug 10, 2023
- MITSUBISHI CHEMICAL CORPORATION
- Satoru NAGAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...
- Publication number 20210273058
- Publication date Sep 2, 2021
- MITSUBISHI CHEMICAL CORPORATION
- Satoru NAGAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE SUBSTRATE AND MANUFACTURING METHOD OF NITRIDE SEMIC...
- Publication number 20200321438
- Publication date Oct 8, 2020
- MITSUBISHI CHEMICAL CORPORATION
- Yusuke Tsukada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...
- Publication number 20200013860
- Publication date Jan 9, 2020
- MITSUBISHI CHEMICAL CORPORATION
- Satoru NAGAO
- C30 - CRYSTAL GROWTH
Information Patent Application
SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...
- Publication number 20190312111
- Publication date Oct 10, 2019
- MITSUBISHI CHEMICAL CORPORATION
- Satoru NAGAO
- C30 - CRYSTAL GROWTH
Information Patent Application
PERIODIC TABLE GROUP 13 METAL NITRIDE CRYSTALS AND METHOD FOR MANUF...
- Publication number 20180258552
- Publication date Sep 13, 2018
- MITSUBISHI CHEMICAL CORPORATION
- Yuuki ENATSU
- C30 - CRYSTAL GROWTH
Information Patent Application
PERIODIC TABLE GROUP 13 METAL NITRIDE CRYSTALS AND METHOD FOR MANUF...
- Publication number 20180057960
- Publication date Mar 1, 2018
- MITSUBISHI CHEMICAL CORPORATION
- Yuuki ENATSU
- C30 - CRYSTAL GROWTH
Information Patent Application
GALLIUM NITRIDE SUBSTRATE AND MANUFACTURING METHOD OF NITRIDE SEMIC...
- Publication number 20170200789
- Publication date Jul 13, 2017
- MITSUBISHI CHEMICAL CORPORATION
- Yusuke TSUKADA
- C30 - CRYSTAL GROWTH
Information Patent Application
SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...
- Publication number 20160233306
- Publication date Aug 11, 2016
- MITSUBISHI CHEMICAL CORPORATION
- Satoru NAGAO
- C30 - CRYSTAL GROWTH
Information Patent Application
GALLIUM NITRIDE SUBSTRATE AND MANUFACTURING METHOD OF NITRIDE SEMIC...
- Publication number 20150311068
- Publication date Oct 29, 2015
- MITSUBISHI CHEMICAL CORPORATION
- Yusuke TSUKADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERIODIC TABLE GROUP 13 METAL NITRIDE CRYSTALS AND METHOD FOR MANUF...
- Publication number 20150093318
- Publication date Apr 2, 2015
- MITSUBISHI CHEMICAL CORPORATION
- Yuuki ENATSU
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING...
- Publication number 20130264606
- Publication date Oct 10, 2013
- Shuichi KUBO
- C30 - CRYSTAL GROWTH
Information Patent Application
NITRIDE SEMICONDUCTOR CRYSTAL AND PRODUCTION PROCESS THEREOF
- Publication number 20120112320
- Publication date May 10, 2012
- MITSUBISHI CHEMICAL CORPORATION
- Shuichi KUBO
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR CLEANING T...
- Publication number 20110180904
- Publication date Jul 28, 2011
- MITSUBISHI CHEMICAL CORPORATION
- Kenji Fujito
- C30 - CRYSTAL GROWTH
Information Patent Application
NITRIDE SEMICONDUCTOR CRYSTAL AND ITS PRODUCTION METHOD
- Publication number 20110129669
- Publication date Jun 2, 2011
- MITSUBISHI CHEMICAL CORPORATION
- Kenji Fujito
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR CLEANING T...
- Publication number 20100200865
- Publication date Aug 12, 2010
- MITSUBISHI CHEMICAL CORPORATION
- Kenji Fujito
- C30 - CRYSTAL GROWTH

Shuichi Kubo

Person

Patents Grantslast 30 patents

Self-standing GaN substrate, GaN crystal, method for producing GaN...

Gallium nitride substrate and manufacturing method of nitride semic...

Self-standing GaN substrate, GaN crystal, method for producing GaN...

Self-standing GaN substrate, GaN crystal, method for producing GaN...

Self-standing GaN substrate, GaN crystal, method for producing GaN...

Gallium nitride substrate and manufacturing method of nitride semic...

Periodic table group 13 metal nitride crystals and method for manuf...

Self-standing GaN substrate, GaN crystal, method for producing GaN...

Periodic table group 13 metal nitride crystals and method for manuf...

Periodic table group 13 metal nitride crystals and method for manuf...

Gallium nitride substrate and manufacturing method of nitride semic...

Nitride semiconductor crystal and its production method

Group III nitride semiconductor substrate and method for cleaning t...

Group III nitride semiconductor substrate and method for cleaning t...

Patents Applicationslast 30 patents

SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...

SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...

GALLIUM NITRIDE SUBSTRATE AND MANUFACTURING METHOD OF NITRIDE SEMIC...

SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...

SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...

PERIODIC TABLE GROUP 13 METAL NITRIDE CRYSTALS AND METHOD FOR MANUF...

PERIODIC TABLE GROUP 13 METAL NITRIDE CRYSTALS AND METHOD FOR MANUF...

GALLIUM NITRIDE SUBSTRATE AND MANUFACTURING METHOD OF NITRIDE SEMIC...

SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...

GALLIUM NITRIDE SUBSTRATE AND MANUFACTURING METHOD OF NITRIDE SEMIC...

PERIODIC TABLE GROUP 13 METAL NITRIDE CRYSTALS AND METHOD FOR MANUF...

GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING...

NITRIDE SEMICONDUCTOR CRYSTAL AND PRODUCTION PROCESS THEREOF

GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR CLEANING T...

NITRIDE SEMICONDUCTOR CRYSTAL AND ITS PRODUCTION METHOD

GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR CLEANING T...