Shuiyuan Huang

Person

Apple Valley, MN, US

People

Patents Grantslast 30 patents

Information Patent Grant
Non-volatile multi-bit memory with programmable capacitance
- Patent number 8,766,230
- Issue date Jul 1, 2014
- Seagate Technology LLC
- Xuguang Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell with stress-induced anisotropy
- Patent number 8,487,390
- Issue date Jul 16, 2013
- Seagate Technology LLC
- Dimitar V. Dimitrov
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnet-assisted transistor devices
- Patent number 8,476,721
- Issue date Jul 2, 2013
- Seagate Technology LLC
- Yang Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Programmable metallization memory cells via selective channel forming
- Patent number 8,399,908
- Issue date Mar 19, 2013
- Seagate Technology LLC
- Haiwen Xi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Programmable metallization memory cells via selective channel forming
- Patent number 8,334,165
- Issue date Dec 18, 2012
- Seagate Technology LLC
- Haiwen Xi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Programmable metallization memory cells via selective channel forming
- Patent number 8,097,902
- Issue date Jan 17, 2012
- Seagate Technology LLC
- Haiwen Xi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory with programmable capacitance
- Patent number 7,977,722
- Issue date Jul 12, 2011
- Seagate Technology LLC
- Xuguang Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Active protection device for resistive random access memory (RRAM)...
- Patent number 7,965,538
- Issue date Jun 21, 2011
- Seagate Technology LLC
- Yongchul Ahn
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnet-assisted transistor devices
- Patent number 7,948,045
- Issue date May 24, 2011
- Seagate Technology LLC
- Yang Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar programmable metallization memory cells
- Patent number 7,847,278
- Issue date Dec 7, 2010
- Seagate Technology LLC
- Antoine Khoueir
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile multi-bit memory with programmable capacitance
- Patent number 7,786,463
- Issue date Aug 31, 2010
- Seagate Technology LLC
- Xuguang Wang
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
PROGRAMMABLE METALLIZATION MEMORY CELLS VIA SELECTIVE CHANNEL FORMING
- Publication number 20130187115
- Publication date Jul 25, 2013
- SEAGATE TECHNOLOGY LLC
- Haiwen Xi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROGRAMMABLE METALLIZATION MEMORY CELLS VIA SELECTIVE CHANNEL FORMING
- Publication number 20120104348
- Publication date May 3, 2012
- Seagate Technology LLC
- Haiwen Xi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY WITH PROGRAMMABLE CAPACITANCE
- Publication number 20110267873
- Publication date Nov 3, 2011
- Seagate Technology LLC
- Shuiyuan Huang
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNET-ASSISTED TRANSISTOR DEVICES
- Publication number 20110193148
- Publication date Aug 11, 2011
- Seagate Technology LLC
- Yang Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Active Protection Device for Resistive Random Access Memory (RRAM)...
- Publication number 20110007552
- Publication date Jan 13, 2011
- Seagate Technology LLC
- Yongchul Ahn
- G11 - INFORMATION STORAGE
Information Patent Application
Conductive Via Plug Formation
- Publication number 20110006436
- Publication date Jan 13, 2011
- Seagate Technology LLC
- Antoine Khoueir
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CELL PATTERNING WITH MULTIPLE HARD MASKS
- Publication number 20100327248
- Publication date Dec 30, 2010
- Seagate Technology LLC
- Antoine Khoueir
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MULTI-BIT MEMORY WITH PROGRAMMABLE CAPACITANCE
- Publication number 20100309717
- Publication date Dec 9, 2010
- Seagate Technology LLC
- Xuguang Wang
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAMMABLE METALLIZATION MEMORY CELLS VIA SELECTIVE CHANNEL FORMING
- Publication number 20100197104
- Publication date Aug 5, 2010
- Seagate Technology LLC
- Haiwen Xi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC STACK DESIGN WITH DECREASED SUBSTRATE STRESS
- Publication number 20100109107
- Publication date May 6, 2010
- Seagate Technology LLC
- Yongchul Ahn
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL WITH STRESS-INDUCED ANISOTROPY
- Publication number 20100084724
- Publication date Apr 8, 2010
- Seagate Technology LLC
- Dimitar V. Dimitrov
- G11 - INFORMATION STORAGE
Information Patent Application
PLANAR PROGRAMMABLE METALLIZATION MEMORY CELLS
- Publication number 20100072448
- Publication date Mar 25, 2010
- Seagate Technology LLC
- Antoine Khoueir
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNET-ASSISTED TRANSISTOR DEVICES
- Publication number 20100038735
- Publication date Feb 18, 2010
- Seagate Technology LLC
- Yang Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROGRAMMABLE METALLIZATION MEMORY CELLS VIA SELECTIVE CHANNEL FORMING
- Publication number 20100006813
- Publication date Jan 14, 2010
- Seagate Technology LLC
- Haiwen Xi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MULTI-BIT MEMORY WITH PROGRAMMABLE CAPACITANCE
- Publication number 20090289240
- Publication date Nov 26, 2009
- Seagate Technology LLC
- Xuguang Wang
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY WITH PROGRAMMABLE CAPACITANCE
- Publication number 20090289290
- Publication date Nov 26, 2009
- Seagate Technology LLC
- Shuiyuan Huang
- G11 - INFORMATION STORAGE

Shuiyuan Huang

Person

Patents Grantslast 30 patents

Non-volatile multi-bit memory with programmable capacitance

Memory cell with stress-induced anisotropy

Magnet-assisted transistor devices

Programmable metallization memory cells via selective channel forming

Programmable metallization memory cells via selective channel forming

Programmable metallization memory cells via selective channel forming

Non-volatile memory with programmable capacitance

Active protection device for resistive random access memory (RRAM)...

Magnet-assisted transistor devices

Planar programmable metallization memory cells

Non-volatile multi-bit memory with programmable capacitance

Patents Applicationslast 30 patents

PROGRAMMABLE METALLIZATION MEMORY CELLS VIA SELECTIVE CHANNEL FORMING

PROGRAMMABLE METALLIZATION MEMORY CELLS VIA SELECTIVE CHANNEL FORMING

NON-VOLATILE MEMORY WITH PROGRAMMABLE CAPACITANCE

MAGNET-ASSISTED TRANSISTOR DEVICES

Active Protection Device for Resistive Random Access Memory (RRAM)...

Conductive Via Plug Formation

CELL PATTERNING WITH MULTIPLE HARD MASKS

NON-VOLATILE MULTI-BIT MEMORY WITH PROGRAMMABLE CAPACITANCE

PROGRAMMABLE METALLIZATION MEMORY CELLS VIA SELECTIVE CHANNEL FORMING

MAGNETIC STACK DESIGN WITH DECREASED SUBSTRATE STRESS

MEMORY CELL WITH STRESS-INDUCED ANISOTROPY

PLANAR PROGRAMMABLE METALLIZATION MEMORY CELLS

MAGNET-ASSISTED TRANSISTOR DEVICES

PROGRAMMABLE METALLIZATION MEMORY CELLS VIA SELECTIVE CHANNEL FORMING

NON-VOLATILE MULTI-BIT MEMORY WITH PROGRAMMABLE CAPACITANCE

NON-VOLATILE MEMORY WITH PROGRAMMABLE CAPACITANCE