Shuming Xu

Person

Shanghai, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Enhanced radio frequency switch and fabrication methods thereof
- Patent number 12,336,218
- Issue date Jun 17, 2025
- Powerlite Semiconductor (Shanghai) Co., Ltd.
- Shuming Xu

Patents Applicationslast 30 patents

Information Patent Application
METAL-OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR HAVING ENHANCED H...
- Publication number 20230343869
- Publication date Oct 26, 2023
- SHANGHAI BRIGHT POWER SEMICONDUCTOR CO., LTD.
- Shuming XU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL-OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR HAVING ENHANCED H...
- Publication number 20230335636
- Publication date Oct 19, 2023
- SHANGHAI BRIGHT POWER SEMICONDUCTOR CO., LTD.
- Lei Shi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL BIPOLAR-CMOS-DMOS (BCD) STRUCTURE WITH INTEGRATED...
- Publication number 20230317719
- Publication date Oct 5, 2023
- SHANGHAI BRIGHT POWER SEMICONDUCTOR CO., LTD.
- Luyao Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED CAPACITOR FOR INTEGRATION WITH METAL-OXIDE SEMICONDUCTOR F...
- Publication number 20230238458
- Publication date Jul 27, 2023
- SHANGHAI BRIGHT POWER SEMICONDUCTOR CO., LTD.
- Shuming Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED RADIO FREQUENCY SWITCH AND FABRICATION METHODS THEREOF
- Publication number 20230102053
- Publication date Mar 30, 2023
- POWERLITE SEMICONDUCTOR (SHANGHAI) CO., LTD
- Shuming Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR HAVING ENHANCED H...
- Publication number 20220384594
- Publication date Dec 1, 2022
- POWERLITE SEMICONDUCTOR (SHANGHAI) CO., LTD
- Shuming Xu
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Enhanced radio frequency switch and fabrication methods thereof

Patents Applicationslast 30 patents

METAL-OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR HAVING ENHANCED H...

METAL-OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR HAVING ENHANCED H...

THREE-DIMENSIONAL BIPOLAR-CMOS-DMOS (BCD) STRUCTURE WITH INTEGRATED...

ENHANCED CAPACITOR FOR INTEGRATION WITH METAL-OXIDE SEMICONDUCTOR F...

ENHANCED RADIO FREQUENCY SWITCH AND FABRICATION METHODS THEREOF

METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR HAVING ENHANCED H...