Shun Kanai

Person

Sendai, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 10,804,457
- Issue date Oct 13, 2020
- Tohoku University
- Hideo Ohno
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 10,651,369
- Issue date May 12, 2020
- Tohoku University
- Hideo Ohno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Control method for magnetoresistance effect element and control dev...
- Patent number 10,127,957
- Issue date Nov 13, 2018
- Tohoku University
- Shun Kanai
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element and magnetic memory
- Patent number 9,564,152
- Issue date Feb 7, 2017
- Tohoku University
- Hideo Ohno
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 9,450,177
- Issue date Sep 20, 2016
- Tohoku University
- Hideo Ohno
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element and magnetic memory
- Patent number 9,135,973
- Issue date Sep 15, 2015
- TOHOKU UNIVERSITY
- Hideo Ohno
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element and magnetic memory
- Patent number 8,917,541
- Issue date Dec 23, 2014
- Hitachi, Ltd.
- Hideo Ohno
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
DIGITAL DEVICE, METHOD FOR PRODUCING SAME, AND METHOD FOR USING SAME
- Publication number 20240371559
- Publication date Nov 7, 2024
- TOHOKU UNIVERSITY
- Yutaro TAKEUCHI
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SUPERPARAMAGNETIC TUNNEL JUNCTION ELEMENT AND COMPUTING SYSTEM
- Publication number 20240212907
- Publication date Jun 27, 2024
- TOHOKU UNIVERSITY
- Keito KOBAYASHI
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
RANDOM NUMBER GENERATION UNIT AND COMPUTING SYSTEM
- Publication number 20220350572
- Publication date Nov 3, 2022
- TOHOKU UNIVERSITY
- Shunsuke FUKAMI
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- Publication number 20170110654
- Publication date Apr 20, 2017
- TOHOKU UNIVERSITY
- Hideo OHNO
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- Publication number 20170025600
- Publication date Jan 26, 2017
- TOHOKU UNIVERSITY
- Hideo OHNO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTROL METHOD FOR MAGNETORESISTANCE EFFECT ELEMENT AND CONTROL DEV...
- Publication number 20160329086
- Publication date Nov 10, 2016
- TOHOKU UNIVERSITY
- Shun KANAI
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetoresistance Effect Element and Magnetic Memory
- Publication number 20140205862
- Publication date Jul 24, 2014
- Tohoku University
- Hideo Ohno
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY
- Publication number 20130141966
- Publication date Jun 6, 2013
- Hideo Ohno
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY
- Publication number 20130094284
- Publication date Apr 18, 2013
- Hideo Ohno
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetoresistive Element and Magnetic Memory
- Publication number 20120320666
- Publication date Dec 20, 2012
- TOHOKU UNIVERSITY
- Hideo Ohno
- G11 - INFORMATION STORAGE

Person

Patents Grantslast 30 patents

Magnetoresistive element and magnetic memory

Magnetoresistive element and magnetic memory

Control method for magnetoresistance effect element and control dev...

Magnetoresistance effect element and magnetic memory

Magnetoresistive element and magnetic memory

Magnetoresistance effect element and magnetic memory

Magnetoresistance effect element and magnetic memory

Patents Applicationslast 30 patents

DIGITAL DEVICE, METHOD FOR PRODUCING SAME, AND METHOD FOR USING SAME

SUPERPARAMAGNETIC TUNNEL JUNCTION ELEMENT AND COMPUTING SYSTEM

RANDOM NUMBER GENERATION UNIT AND COMPUTING SYSTEM

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

CONTROL METHOD FOR MAGNETORESISTANCE EFFECT ELEMENT AND CONTROL DEV...

Magnetoresistance Effect Element and Magnetic Memory

MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY

MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY

Magnetoresistive Element and Magnetic Memory