Shunsaku UETA

Person

Itami-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Silicon carbide single crystal and silicon carbide substrate
- Patent number 12,227,876
- Issue date Feb 18, 2025
- Sumitomo Electric Industries, Ltd.
- Shunsaku Ueta
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide substrate
- Patent number 12,116,696
- Issue date Oct 15, 2024
- Sumitomo Electric Industries, Ltd.
- Hiroki Takaoka
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Silicon carbide substrate and method of manufacturing silicon carbi...
- Patent number 11,913,135
- Issue date Feb 27, 2024
- Sumitomo Electric Industries, Ltd.
- Kyoko Okita
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Silicon carbide single crystal substrate
- Patent number 11,781,246
- Issue date Oct 10, 2023
- Sumitomo Electric Industries, Ltd.
- Kyoko Okita
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Silicon carbide single crystal substrate
- Patent number 11,535,953
- Issue date Dec 27, 2022
- Sumitomo Electric Industries, Ltd.
- Kyoko Okita
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Silicon carbide substrate
- Patent number 10,361,273
- Issue date Jul 23, 2019
- Sumitomo Electric Industries, Ltd.
- Naoki Kaji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide substrate
- Patent number 10,319,821
- Issue date Jun 11, 2019
- Sumitomo Electric Industries, Ltd.
- Shunsaku Ueta
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing silicon carbide single crystal
- Patent number 10,184,191
- Issue date Jan 22, 2019
- Sumitomo Electric Industries, Ltd.
- Tsutomu Hori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing single crystal
- Patent number 9,777,400
- Issue date Oct 3, 2017
- Sumitomo Electric Industries, Ltd.
- Shunsaku Ueta
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing single crystal
- Patent number 9,777,401
- Issue date Oct 3, 2017
- Sumitomo Electric Industries, Ltd.
- Shunsaku Ueta
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing silicon carbide substrate
- Patent number 9,631,296
- Issue date Apr 25, 2017
- Sumitomo Electric Industries, Ltd.
- Shinsuke Fujiwara
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBI...
- Publication number 20250006796
- Publication date Jan 2, 2025
- Sumitomo Electric Industries, Ltd.
- Takahiro SHIIHARA
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SINGLE CRYSTAL AND SILICON CARBIDE SUBSTRATE
- Publication number 20240309555
- Publication date Sep 19, 2024
- Sumitomo Electric Industries, Ltd.
- Shunsaku UETA
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SUBSTRATE
- Publication number 20240254656
- Publication date Aug 1, 2024
- Sumitomo Electric Industries, Ltd.
- Hiroki TAKAOKA
- C01 - INORGANIC CHEMISTRY
Information Patent Application
SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBI...
- Publication number 20240234509
- Publication date Jul 11, 2024
- Sumitomo Electric Industries, Ltd.
- Kyoko OKITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBI...
- Publication number 20240145229
- Publication date May 2, 2024
- Sumitomo Electric Industries, Ltd.
- Kyoko OKITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBI...
- Publication number 20240136403
- Publication date Apr 25, 2024
- Sumitomo Electric Industries, Ltd.
- Kyoko OKITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBI...
- Publication number 20230357957
- Publication date Nov 9, 2023
- Sumitomo Electric Industries, Ltd.
- Kyoko OKITA
- C01 - INORGANIC CHEMISTRY
Information Patent Application
SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE
- Publication number 20230081506
- Publication date Mar 16, 2023
- Sumitomo Electric Industries, Ltd.
- Kyoko OKITA
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SUBSTRATE AND METHOD FOR MANUFACTURING SILICON CARB...
- Publication number 20220403550
- Publication date Dec 22, 2022
- Sumitomo Electric Industries, Ltd.
- Kyoko OKITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE
- Publication number 20210054529
- Publication date Feb 25, 2021
- Sumitomo Electric Industries, Ltd.
- Kyoko OKITA
- G01 - MEASURING TESTING
Information Patent Application
SILICON CARBIDE SUBSTRATE
- Publication number 20180254323
- Publication date Sep 6, 2018
- Sumitomo Electric Industries, Ltd.
- Shunsaku UETA
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SUBSTRATE
- Publication number 20180254324
- Publication date Sep 6, 2018
- SUMITOMO ELECTRIC INDUSTRIES.,LTD.
- Naoki KAJI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE
- Publication number 20170152609
- Publication date Jun 1, 2017
- Sumitomo Electric Industries, Ltd.
- Shinsuke FUJIWARA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL
- Publication number 20160340796
- Publication date Nov 24, 2016
- Sumitomo Electric Industries, Ltd.
- Tsutomu HORI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SINGLE CRYSTAL
- Publication number 20160040317
- Publication date Feb 11, 2016
- Sumitomo Electric Industries, Ltd.
- Shunsaku UETA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SINGLE CRYSTAL
- Publication number 20160032487
- Publication date Feb 4, 2016
- Sumitomo Electric Industries, Ltd.
- Shunsaku UETA
- C30 - CRYSTAL GROWTH
Information Patent Application
CRUCIBLE AND METHOD FOR PRODUCING SINGLE CRYSTAL
- Publication number 20160002820
- Publication date Jan 7, 2016
- Sumitomo Electric Industries, Ltd.
- Tsutomu HORI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MAUFACTURING SILICON CARBIDE SUBSTRATE
- Publication number 20150225873
- Publication date Aug 13, 2015
- Sumitomo Electric Industries, Ltd.
- Shinsuke FUJIWARA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL
- Publication number 20140299048
- Publication date Oct 9, 2014
- SUMITOMO ELECTRIC INDUSTRIES LTD.
- Makoto SASAKI
- C30 - CRYSTAL GROWTH
Information Patent Application
INGOT, SILICON CARBIDE SUBSTRATE, AND METHOD FOR PRODUCING INGOT
- Publication number 20140287226
- Publication date Sep 25, 2014
- Sumitomo Electric Industries, Ltd.
- Tsutomu HORI
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SUBSTRATE, SILICON CARBIDE SEMICONDUCTOR DEVICE, ME...
- Publication number 20130092956
- Publication date Apr 18, 2013
- Sumitomo Electric Industries, Ltd.
- Keiji ISHIBASHI
- C30 - CRYSTAL GROWTH

Shunsaku UETA

Person

Patents Grantslast 30 patents

Silicon carbide single crystal and silicon carbide substrate

Silicon carbide substrate

Silicon carbide substrate and method of manufacturing silicon carbi...

Silicon carbide single crystal substrate

Silicon carbide single crystal substrate

Silicon carbide substrate

Silicon carbide substrate

Method for manufacturing silicon carbide single crystal

Method for producing single crystal

Method for producing single crystal

Method of manufacturing silicon carbide substrate

Patents Applicationslast 30 patents

SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBI...

SILICON CARBIDE SINGLE CRYSTAL AND SILICON CARBIDE SUBSTRATE

SILICON CARBIDE SUBSTRATE

SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBI...

SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBI...

SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBI...

SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBI...

SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE

SILICON CARBIDE SUBSTRATE AND METHOD FOR MANUFACTURING SILICON CARB...

SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE

SILICON CARBIDE SUBSTRATE

SILICON CARBIDE SUBSTRATE

METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE

METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL

METHOD FOR PRODUCING SINGLE CRYSTAL

METHOD FOR PRODUCING SINGLE CRYSTAL

CRUCIBLE AND METHOD FOR PRODUCING SINGLE CRYSTAL

METHOD OF MAUFACTURING SILICON CARBIDE SUBSTRATE

METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL

INGOT, SILICON CARBIDE SUBSTRATE, AND METHOD FOR PRODUCING INGOT

SILICON CARBIDE SUBSTRATE, SILICON CARBIDE SEMICONDUCTOR DEVICE, ME...