Shunsuke Fukami

Person

Minato-ku, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Magnetoresistance effect element and magnetic memory
- Patent number 11,690,299
- Issue date Jun 27, 2023
- TOHOKU UNIVERSITY
- Hideo Sato
Information Patent Grant
Magnetic tunnel junction element and magnetic memory
- Patent number 11,563,169
- Issue date Jan 24, 2023
- Tohoku University
- Hideo Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistance effect element, circuit device, and circuit unit
- Patent number 11,557,719
- Issue date Jan 17, 2023
- TOHOKU UNIVERSITY
- Shunsuke Fukami
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Magnetic multilayer film, magnetic memory element, magnetic memory...
- Patent number 11,200,933
- Issue date Dec 14, 2021
- Tohoku University
- Shunsuke Fukami
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 10,998,491
- Issue date May 4, 2021
- TOHOKU UNIVERSITY
- Kyota Watanabe
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic material and method of manufacturing the same
- Patent number 10,706,996
- Issue date Jul 7, 2020
- Tohoku University
- Shunsuke Fukami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistance effect element and magnetic memory
- Patent number 10,658,572
- Issue date May 19, 2020
- Tohoku University
- Hideo Sato
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element including a recording layer with p...
- Patent number 10,622,550
- Issue date Apr 14, 2020
- Tohoku University
- Shunsuke Fukami
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Magnetoresistance effect element and magnetic memory device
- Patent number 10,410,703
- Issue date Sep 10, 2019
- Tohoku University
- Shunsuke Fukami
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistance effect element and magnetic memory
- Patent number 10,263,180
- Issue date Apr 16, 2019
- Tohoku University
- Hideo Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistance effect element and magnetic memory
- Patent number 10,164,174
- Issue date Dec 25, 2018
- Tohoku University
- Hideo Sato
- G11 - INFORMATION STORAGE
Information Patent Grant
Three terminal magnetoresistive devices, magnetoresistive random ac...
- Patent number 10,020,039
- Issue date Jul 10, 2018
- Tohoku University
- Shunsuke Fukami
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element and magnetic memory device
- Patent number 9,941,468
- Issue date Apr 10, 2018
- Tohoku University
- Shunsuke Fukami
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory element and magnetic memory
- Patent number 9,799,822
- Issue date Oct 24, 2017
- NEC Corporation
- Shunsuke Fukami
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element and magnetic memory
- Patent number 9,577,182
- Issue date Feb 21, 2017
- Tohoku University
- Shoji Ikeda
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive effect element and magnetic random access memory u...
- Patent number 9,379,312
- Issue date Jun 28, 2016
- NEC Corporation
- Tadahiko Sugibayashi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistance effect element and magnetic memory
- Patent number 9,202,545
- Issue date Dec 1, 2015
- Tohoku University
- Hideo Sato
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile magnetic element and nonvolatile magnetic device
- Patent number 9,105,831
- Issue date Aug 11, 2015
- NEC Corporation
- Shunsuke Fukami
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile logic operation device
- Patent number 9,083,336
- Issue date Jul 14, 2015
- NEC Corporation
- Shunsuke Fukami
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Magnetic memory element and magnetic memory
- Patent number 8,994,130
- Issue date Mar 31, 2015
- NEC Corporation
- Shunsuke Fukami
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory element, magnetic memory and manufacturing method o...
- Patent number 8,884,388
- Issue date Nov 11, 2014
- NEC Corporation
- Shunsuke Fukami
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory device and magnetic memory
- Patent number 8,791,534
- Issue date Jul 29, 2014
- NEC Corporation
- Shunsuke Fukami
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory and method of manufacturing the same
- Patent number 8,787,076
- Issue date Jul 22, 2014
- NEC Corporation
- Shunsuke Fukami
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory element and magnetic random access memory
- Patent number 8,687,414
- Issue date Apr 1, 2014
- NEC Corporation
- Kiyokazu Nagahara
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic random access memory and initializing method for the same
- Patent number 8,625,327
- Issue date Jan 7, 2014
- NEC Corporation
- Tetsuhiro Suzuki
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory element, magnetic memory and initializing method
- Patent number 8,592,930
- Issue date Nov 26, 2013
- NEC Corporation
- Shunsuke Fukami
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of initializing magnetic memory element
- Patent number 8,565,011
- Issue date Oct 22, 2013
- NEC Corporation
- Shunsuke Fukami
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory device and magnetic random access memory
- Patent number 8,559,214
- Issue date Oct 15, 2013
- NEC Corporation
- Shunsuke Fukami
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance element, MRAM, and initialization method for magn...
- Patent number 8,537,604
- Issue date Sep 17, 2013
- NEC Corporation
- Tetsuhiro Suzuki
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory element and magnetic memory
- Patent number 8,514,616
- Issue date Aug 20, 2013
- NEC Corporation
- Nobuyuki Ishiwata
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
SUPERPARAMAGNETIC TUNNEL JUNCTION ELEMENT AND COMPUTING SYSTEM
- Publication number 20240212907
- Publication date Jun 27, 2024
- TOHOKU UNIVERSITY
- Keito KOBAYASHI
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
THIN FILM INDUCTOR ELEMENT AND THIN FILM VARIABLE INDUCTOR ELEMENT
- Publication number 20240145147
- Publication date May 2, 2024
- JAPAN ATOMIC ENERGY AGENCY
- Jun'ichi IEDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETO-OPTICAL MEMORY INTERFACE
- Publication number 20230368840
- Publication date Nov 16, 2023
- Tohoku University
- Shigemi Mizukami
- G11 - INFORMATION STORAGE
Information Patent Application
RANDOM NUMBER GENERATION UNIT AND COMPUTING SYSTEM
- Publication number 20220350572
- Publication date Nov 3, 2022
- TOHOKU UNIVERSITY
- Shunsuke FUKAMI
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT, CIRCUIT DEVICE, AND CIRCUIT UNIT
- Publication number 20210119114
- Publication date Apr 22, 2021
- Tohoku University
- Shunsuke Fukami
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- Publication number 20210098689
- Publication date Apr 1, 2021
- Tohoku University
- Kyota WATANABE
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY
- Publication number 20210005808
- Publication date Jan 7, 2021
- Tohoku University
- Hideo SATO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MULTILAYER FILM, MAGNETIC MEMORY ELEMENT, MAGNETIC MEMORY...
- Publication number 20200286536
- Publication date Sep 10, 2020
- TOHOKU UNIVERSITY
- Shunsuke FUKAMI
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY
- Publication number 20190074433
- Publication date Mar 7, 2019
- TOHOKU UNIVERSITY
- Hideo SATO
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION ELEMENT AND MAGNETIC MEMORY
- Publication number 20190019944
- Publication date Jan 17, 2019
- TOHOKU UNIVERSITY
- Hideo Sato
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY
- Publication number 20180175286
- Publication date Jun 21, 2018
- TOHOKU UNIVERSITY
- Hideo SATO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY DEVICE
- Publication number 20180108390
- Publication date Apr 19, 2018
- TOHOKU UNIVERSITY
- Shunsuke FUKAMI
- B82 - NANO-TECHNOLOGY
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC MEMORY DEVICE, MANUFACTU...
- Publication number 20180019388
- Publication date Jan 18, 2018
- TOHOKU UNIVERSITY
- Shunsuke FUKAMI
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY
- Publication number 20170324030
- Publication date Nov 9, 2017
- TOHOKU UNIVERSITY
- Hideo SATO
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY DEVICE
- Publication number 20170222135
- Publication date Aug 3, 2017
- Shunsuke Fukami
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE DEVICE, MAGNETORESISTIVE RANDOM ACCESS MEMORY AND...
- Publication number 20160247550
- Publication date Aug 25, 2016
- NEC Corporation
- Shunsuke FUKAMI
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY
- Publication number 20160233416
- Publication date Aug 11, 2016
- TOHOKU UNIVERSITY
- Shoji IKEDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MATERIAL AND METHOD OF MANUFACTURING THE SAME
- Publication number 20150332818
- Publication date Nov 19, 2015
- NEC Corporation
- Shunsuke FUKAMI
- B32 - LAYERED PRODUCTS
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY
- Publication number 20150109853
- Publication date Apr 23, 2015
- TOHOKU UNIVERSITY
- Hideo Sato
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATILE MAGNETIC ELEMENT AND NONVOLATILE MAGNETIC DEVICE
- Publication number 20140159121
- Publication date Jun 12, 2014
- Shunsuke Fukami
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY
- Publication number 20140097509
- Publication date Apr 10, 2014
- Tohoku University
- Shunsuke Fukami
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE LOGIC OPERATION DEVICE
- Publication number 20130285700
- Publication date Oct 31, 2013
- Shunsuke Fukami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY U...
- Publication number 20130175645
- Publication date Jul 11, 2013
- NEC Corporation
- Tadahiko Sugibayashi
- B82 - NANO-TECHNOLOGY
Information Patent Application
MAGNETIC MEMORY DEVICE AND MAGNETIC MEMORY
- Publication number 20130140660
- Publication date Jun 6, 2013
- Shunsuke Fukami
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY ELEMENT, MAGNETIC MEMORY AND MANUFACTURING METHOD O...
- Publication number 20130113058
- Publication date May 9, 2013
- NEC Corporation
- Shunsuke Fukami
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY ELEMENT, MAGNETIC MEMORY AND INITIALIZING METHOD
- Publication number 20120278582
- Publication date Nov 1, 2012
- NEC Corporation
- Shunsuke Fukami
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY
- Publication number 20110298067
- Publication date Dec 8, 2011
- NEC Corporation
- Nobuyuki Ishiwata
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY
- Publication number 20110297909
- Publication date Dec 8, 2011
- Shunsuke Fukami
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE LOGIC CIRCUIT
- Publication number 20110292718
- Publication date Dec 1, 2011
- Tetsuhiro Suzuki
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
MAGNETIC MEMORY ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20110267879
- Publication date Nov 3, 2011
- NEC Corporation
- Kiyokazu Nagahara
- G11 - INFORMATION STORAGE

Shunsuke Fukami

Person

Patents Grantslast 30 patents

Magnetoresistance effect element and magnetic memory

Magnetic tunnel junction element and magnetic memory

Magnetoresistance effect element, circuit device, and circuit unit

Magnetic multilayer film, magnetic memory element, magnetic memory...

Magnetoresistive element and magnetic memory

Magnetic material and method of manufacturing the same

Magnetoresistance effect element and magnetic memory

Magnetoresistance effect element including a recording layer with p...

Magnetoresistance effect element and magnetic memory device

Magnetoresistance effect element and magnetic memory

Magnetoresistance effect element and magnetic memory

Three terminal magnetoresistive devices, magnetoresistive random ac...

Magnetoresistance effect element and magnetic memory device

Magnetic memory element and magnetic memory

Magnetoresistance effect element and magnetic memory

Magnetoresistive effect element and magnetic random access memory u...

Magnetoresistance effect element and magnetic memory

Nonvolatile magnetic element and nonvolatile magnetic device

Non-volatile logic operation device

Magnetic memory element and magnetic memory

Magnetic memory element, magnetic memory and manufacturing method o...

Magnetic memory device and magnetic memory

Magnetic memory and method of manufacturing the same

Magnetic memory element and magnetic random access memory

Magnetic random access memory and initializing method for the same

Magnetic memory element, magnetic memory and initializing method

Method of initializing magnetic memory element

Magnetic memory device and magnetic random access memory

Magnetoresistance element, MRAM, and initialization method for magn...

Magnetic memory element and magnetic memory

Patents Applicationslast 30 patents

SUPERPARAMAGNETIC TUNNEL JUNCTION ELEMENT AND COMPUTING SYSTEM

THIN FILM INDUCTOR ELEMENT AND THIN FILM VARIABLE INDUCTOR ELEMENT

MAGNETO-OPTICAL MEMORY INTERFACE

RANDOM NUMBER GENERATION UNIT AND COMPUTING SYSTEM

MAGNETORESISTANCE EFFECT ELEMENT, CIRCUIT DEVICE, AND CIRCUIT UNIT

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY

MAGNETIC MULTILAYER FILM, MAGNETIC MEMORY ELEMENT, MAGNETIC MEMORY...

MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY

MAGNETIC TUNNEL JUNCTION ELEMENT AND MAGNETIC MEMORY

MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY

MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY DEVICE

MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC MEMORY DEVICE, MANUFACTU...

MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY

MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY DEVICE

MAGNETORESISTIVE DEVICE, MAGNETORESISTIVE RANDOM ACCESS MEMORY AND...

MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY

MAGNETIC MATERIAL AND METHOD OF MANUFACTURING THE SAME

MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY

NONVOLATILE MAGNETIC ELEMENT AND NONVOLATILE MAGNETIC DEVICE

MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY

NON-VOLATILE LOGIC OPERATION DEVICE

MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY U...

MAGNETIC MEMORY DEVICE AND MAGNETIC MEMORY

MAGNETIC MEMORY ELEMENT, MAGNETIC MEMORY AND MANUFACTURING METHOD O...

MAGNETIC MEMORY ELEMENT, MAGNETIC MEMORY AND INITIALIZING METHOD

MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY

MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY

NON-VOLATILE LOGIC CIRCUIT

MAGNETIC MEMORY ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY