Shunta HARADA

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Aichi, JP

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Patents Grantslast 30 patents

Information Patent Grant
Silicon carbide substrate, method for manufacturing silicon carbide...
- Patent number 11,094,835
- Issue date Aug 17, 2021
- Mitsubishi Electric Corporation
- Tomoaki Furusho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing crystal of silicon carbide, and crystal produc...
- Patent number 10,151,046
- Issue date Dec 11, 2018
- National University Corporation Nagoya University
- Toru Ujihara
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and device for measuring energy of electrons excited by sunl...
- Patent number 9,671,356
- Issue date Jun 6, 2017
- National University Corporation Nagoya University
- Toru Ujihara
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER

Patents Applicationslast 30 patents

Information Patent Application
SILICON CARBIDE SUBSTRATE, METHOD FOR MANUFACTURING SILICON CARBIDE...
- Publication number 20200013907
- Publication date Jan 9, 2020
- Mitsubishi Electric Corporation
- Tomoaki FURUSHO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method for Producing Crystal of Silicon Carbide, and Crystal Produc...
- Publication number 20170260647
- Publication date Sep 14, 2017
- NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY
- Toru UJIHARA
- C30 - CRYSTAL GROWTH
Information Patent Application
Method and Device for Measuring Energy of Electrons Excited by Sunl...
- Publication number 20160047760
- Publication date Feb 18, 2016
- NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY
- Toru UJIHARA
- G01 - MEASURING TESTING
Information Patent Application
CRYSTAL PRODUCING APPARATUS, SiC SINGLE CRYSTAL PRODUCING METHOD, A...
- Publication number 20150167197
- Publication date Jun 18, 2015
- NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY
- Toru UJIHARA
- C30 - CRYSTAL GROWTH