Shyh-Horng YANG

Person

Plano, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
SRAM cell with asymmetrical pass gate
- Patent number 8,216,903
- Issue date Jul 10, 2012
- Texas Instruments Incorporated
- Theodore W. Houston
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SRAM cell with asymmetrical pass gate
- Patent number 8,211,773
- Issue date Jul 3, 2012
- Texas Instruments Incorporated
- Theodore W. Houston
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual poly deposition and through gate oxide implants
- Patent number 7,435,638
- Issue date Oct 14, 2008
- Texas Instruments Incorporated
- Shaofeng Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SRAM cell with asymmetrical transistors for reduced leakage
- Patent number 7,384,839
- Issue date Jun 10, 2008
- Texas Instruments Incorporated
- Shyh-Horng Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Leakage current reduction method
- Patent number 6,956,398
- Issue date Oct 18, 2005
- Texas Instruments Incorporated
- Hugh Mair
- H03 - BASIC ELECTRONIC CIRCUITRY

Patents Applicationslast 30 patents

Information Patent Application
SRAM CELL WITH ASYMMETRICAL PASS GATE
- Publication number 20120261768
- Publication date Oct 18, 2012
- TEXAS INSTRUMENTS INCORPORATED
- Theodore W. Houston
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SRAM Cell with Asymmetrical Pass Gate
- Publication number 20100207183
- Publication date Aug 19, 2010
- TEXAS INSTRUMENTS INCORPORATED
- Theodore W. Houston
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MATCHED ANALOG CMOS TRANSISTORS WITH EXTENSION WELLS
- Publication number 20090140346
- Publication date Jun 4, 2009
- Henry Litzmann Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL POLY DEPOSITION AND THROUGH GATE OXIDE IMPLANTS
- Publication number 20080315328
- Publication date Dec 25, 2008
- TEXAS INSTRUMENTS INCORPORATED
- Shaofeng Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SRAM CELL WITH ASYMMETRICAL TRANSISTORS FOR REDUCED LEAKAGE
- Publication number 20080237745
- Publication date Oct 2, 2008
- TEXAS INSTRUMENTS INCORPORATED
- Shyh-Horng YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual poly deposition and through gate oxide implants
- Publication number 20070275517
- Publication date Nov 29, 2007
- TEXAS INSTRUMENTS INCORPORATED
- Shaofeng Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SRAM cell with asymmetrical pass gate
- Publication number 20070069290
- Publication date Mar 29, 2007
- Theodore W. Houston
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SRAM cell with asymmetrical transistors for reduced leakage
- Publication number 20070069277
- Publication date Mar 29, 2007
- Shyh-Horng Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LEAKAGE CURRENT REDUCTION METHOD
- Publication number 20050212554
- Publication date Sep 29, 2005
- Hugh Mair
- H03 - BASIC ELECTRONIC CIRCUITRY

Shyh-Horng YANG

Person

Patents Grantslast 30 patents

SRAM cell with asymmetrical pass gate

SRAM cell with asymmetrical pass gate

Dual poly deposition and through gate oxide implants

SRAM cell with asymmetrical transistors for reduced leakage

Leakage current reduction method

Patents Applicationslast 30 patents

SRAM CELL WITH ASYMMETRICAL PASS GATE

SRAM Cell with Asymmetrical Pass Gate

MATCHED ANALOG CMOS TRANSISTORS WITH EXTENSION WELLS

DUAL POLY DEPOSITION AND THROUGH GATE OXIDE IMPLANTS

SRAM CELL WITH ASYMMETRICAL TRANSISTORS FOR REDUCED LEAKAGE

Dual poly deposition and through gate oxide implants

SRAM cell with asymmetrical pass gate

SRAM cell with asymmetrical transistors for reduced leakage

LEAKAGE CURRENT REDUCTION METHOD