Shyh-Horng Yang

Person

Hsin-Chu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Raised epitaxial LDD in MuGFETs and methods for forming the same
- Patent number 11,489,054
- Issue date Nov 1, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yong-Yan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-gate devices with replaced-channels and methods for forming t...
- Patent number 10,978,355
- Issue date Apr 13, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Wei Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Raised epitaxial LDD in MuGFETs and methods for forming the same
- Patent number 10,840,346
- Issue date Nov 17, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yong-Yan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Raised epitaxial LDD in MuGFETs and methods for forming the same
- Patent number 10,516,024
- Issue date Dec 24, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yong-Yan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-gate devices with replaced-channels and methods for forming t...
- Patent number 10,014,223
- Issue date Jul 3, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Wei Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Raised epitaxial LDD in MuGFETs and methods for forming the same
- Patent number 9,941,368
- Issue date Apr 10, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yonag-Yan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET and method of fabricating the same
- Patent number 9,634,104
- Issue date Apr 25, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd
- Donald Y. Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Raised epitaxial LDD in MuGFETs and methods for forming the same
- Patent number 9,515,167
- Issue date Dec 6, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yonag-Yan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a FinFET device having a stepped profile
- Patent number 9,514,991
- Issue date Dec 6, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Wei Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a multi-gate device
- Patent number 9,431,397
- Issue date Aug 30, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Wei Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of designing a circuit and system for implementing the method
- Patent number 9,317,647
- Issue date Apr 19, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shyh-Horng Yang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Multi-gate devices with replaced-channels and methods for forming t...
- Patent number 9,171,925
- Issue date Oct 27, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Wei Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Raised epitaxial LDD in MuGFETs
- Patent number 9,166,044
- Issue date Oct 20, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen-Tai Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device including a stepped profile structure
- Patent number 9,166,053
- Issue date Oct 20, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Wei Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Finfet and method of fabricating the same
- Patent number 9,053,934
- Issue date Jun 9, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Donald Y. Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor having a highly doped region
- Patent number 9,000,536
- Issue date Apr 7, 2015
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Wei Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a multi-gate device
- Patent number 8,956,931
- Issue date Feb 17, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Wei Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Local charge and work function engineering on MOSFET
- Patent number 8,679,926
- Issue date Mar 25, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huan-Tsung Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET and method of fabricating the same
- Patent number 8,659,032
- Issue date Feb 25, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Donald Y. Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor performance with metal gate
- Patent number 8,258,587
- Issue date Sep 4, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yuri Masuoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Local charge and work function engineering on MOSFET
- Patent number 8,030,718
- Issue date Oct 4, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huan-Tsung Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Matched analog CMOS transistors with extension wells
- Patent number 7,692,217
- Issue date Apr 6, 2010
- Texas Instruments Incorporated
- Henry Litzmann Edwards
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20240105851
- Publication date Mar 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jiefeng Jeff LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Raised Epitaxial LDD in MuGFETs and Methods for Forming the Same
- Publication number 20210083063
- Publication date Mar 18, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yong-Yan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Raised Epitaxial LDD in MuGFETs and Methods for Forming the Same
- Publication number 20200006505
- Publication date Jan 2, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yong-Yan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-Gate Devices with Replaced-Channels and Methods for Forming t...
- Publication number 20180269112
- Publication date Sep 20, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Wei Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Raised Epitaxial LDD in MuGFETs and Methods for Forming the Same
- Publication number 20180226479
- Publication date Aug 9, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yong-Yan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RAISED EPITAXIAL LDD IN MUGFETS AND METHODS FOR FORMING THE SAME
- Publication number 20170084709
- Publication date Mar 23, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yonag-Yan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-Gate Devices with Replaced-Channels and Methods for Forming t...
- Publication number 20160043002
- Publication date Feb 11, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Wei Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A FINFET DEVICE HAVING A STEPPED PROFILE
- Publication number 20160035625
- Publication date Feb 4, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Wei Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Raised Epitaxial LDD in MuGFETs and Methods for Forming the Same
- Publication number 20160013297
- Publication date Jan 14, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yonag-Yan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF DESIGNING A CIRCUIT AND SYSTEM FOR IMPLEMENTING THE METHOD
- Publication number 20150278427
- Publication date Oct 1, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shyh-Horng YANG
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
FINFET AND METHOD OF FABRICATING THE SAME
- Publication number 20150249138
- Publication date Sep 3, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Donald Y. CHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Fabricating A Multi-Gate Device
- Publication number 20150162333
- Publication date Jun 11, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Wei Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Raised Epitaxial LDD in MuGFETs and Methods for Forming the Same
- Publication number 20150091086
- Publication date Apr 2, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen-Tai Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Forming Multi-Gate Device with Dual Channel
- Publication number 20150001593
- Publication date Jan 1, 2015
- Taiwan Semiconductor Manufacturing Co., LTD
- Chih-Wei Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICE AND METHOD OF MANUFACTURING SAME
- Publication number 20140239393
- Publication date Aug 28, 2014
- Taiwan Semiconuductor Manufacturing Company, Ltd.
- Chih-Wei Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method For Fabricating A Multi-Gate Device
- Publication number 20140231924
- Publication date Aug 21, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Wei Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET AND METHOD OF FABRICATING THE SAME
- Publication number 20140134831
- Publication date May 15, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Donald Y. CHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-Gate Devices with Replaced-Channels and Methods for Forming t...
- Publication number 20130285141
- Publication date Oct 31, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Wei Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET AND METHOD OF FABRICATING THE SAME
- Publication number 20130193446
- Publication date Aug 1, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Donald Y. CHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Local Charge and Work Function Engineering on MOSFET
- Publication number 20120003804
- Publication date Jan 5, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huan-Tsung Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR PERFORMANCE WITH METAL GATE
- Publication number 20100084719
- Publication date Apr 8, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yuri MASUOKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCAL CHARGE AND WORK FUNCTION ENGINEERING ON MOSFET
- Publication number 20100065925
- Publication date Mar 18, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huan-Tsung Huang
- H01 - BASIC ELECTRIC ELEMENTS

Shyh-Horng Yang

Person

Patents Grantslast 30 patents

Raised epitaxial LDD in MuGFETs and methods for forming the same

Multi-gate devices with replaced-channels and methods for forming t...

Raised epitaxial LDD in MuGFETs and methods for forming the same

Raised epitaxial LDD in MuGFETs and methods for forming the same

Multi-gate devices with replaced-channels and methods for forming t...

Raised epitaxial LDD in MuGFETs and methods for forming the same

FinFET and method of fabricating the same

Raised epitaxial LDD in MuGFETs and methods for forming the same

Method of manufacturing a FinFET device having a stepped profile

Method for fabricating a multi-gate device

Method of designing a circuit and system for implementing the method

Multi-gate devices with replaced-channels and methods for forming t...

Raised epitaxial LDD in MuGFETs

FinFET device including a stepped profile structure

Finfet and method of fabricating the same

Fin field effect transistor having a highly doped region

Method for fabricating a multi-gate device

Local charge and work function engineering on MOSFET

FinFET and method of fabricating the same

Transistor performance with metal gate

Local charge and work function engineering on MOSFET

Matched analog CMOS transistors with extension wells

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME

Raised Epitaxial LDD in MuGFETs and Methods for Forming the Same

Raised Epitaxial LDD in MuGFETs and Methods for Forming the Same

Multi-Gate Devices with Replaced-Channels and Methods for Forming t...

Raised Epitaxial LDD in MuGFETs and Methods for Forming the Same

RAISED EPITAXIAL LDD IN MUGFETS AND METHODS FOR FORMING THE SAME

Multi-Gate Devices with Replaced-Channels and Methods for Forming t...

METHOD OF MANUFACTURING A FINFET DEVICE HAVING A STEPPED PROFILE

Raised Epitaxial LDD in MuGFETs and Methods for Forming the Same

METHOD OF DESIGNING A CIRCUIT AND SYSTEM FOR IMPLEMENTING THE METHOD

FINFET AND METHOD OF FABRICATING THE SAME

Method for Fabricating A Multi-Gate Device

Raised Epitaxial LDD in MuGFETs and Methods for Forming the Same

Method for Forming Multi-Gate Device with Dual Channel

FINFET DEVICE AND METHOD OF MANUFACTURING SAME

Method For Fabricating A Multi-Gate Device

FINFET AND METHOD OF FABRICATING THE SAME

Multi-Gate Devices with Replaced-Channels and Methods for Forming t...

FINFET AND METHOD OF FABRICATING THE SAME

Local Charge and Work Function Engineering on MOSFET

TRANSISTOR PERFORMANCE WITH METAL GATE

LOCAL CHARGE AND WORK FUNCTION ENGINEERING ON MOSFET