Siddarth KRISHNAN

Person

Newark, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Methods of forming semiconductor structures
- Patent number 11,908,914
- Issue date Feb 20, 2024
- Applied Materials, Inc.
- Ria Someshwar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bias temperature instability correction in memory arrays
- Patent number 11,837,285
- Issue date Dec 5, 2023
- Applied Materials, Inc.
- Christophe J. Chevallier
- G11 - INFORMATION STORAGE
Information Patent Grant
Edge protection on semiconductor substrates
- Patent number 11,830,824
- Issue date Nov 28, 2023
- Applied Materials, Inc.
- Amirhasan Nourbakhsh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Soft reset for multi-level programming of memory cells in non-von n...
- Patent number 11,790,989
- Issue date Oct 17, 2023
- Applied Materials, Inc.
- Deepak Kamalanathan
- G11 - INFORMATION STORAGE
Information Patent Grant
Power device structures and methods of making
- Patent number 11,769,665
- Issue date Sep 26, 2023
- Applied Materials, Inc.
- Amirhasan Nourbakhsh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Graded doping in power devices
- Patent number 11,705,490
- Issue date Jul 18, 2023
- Applied Materials, Inc.
- Ashish Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual oxide analog switch for neuromorphic switching
- Patent number 11,616,195
- Issue date Mar 28, 2023
- Applied Materials, Inc.
- Deepak Kamalanathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming doped silicide power devices
- Patent number 11,605,741
- Issue date Mar 14, 2023
- Applied Materials, Inc.
- Joshua S. Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep trench integration processes and devices
- Patent number 11,410,873
- Issue date Aug 9, 2022
- Applied Materials, Inc.
- Lan Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Annealing processes for memory devices
- Patent number 11,362,275
- Issue date Jun 14, 2022
- Applied Materials, Inc.
- Nicolas Louis Gabriel Breil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-uniform state spacing in multi-state memory element for low-pow...
- Patent number 11,127,458
- Issue date Sep 21, 2021
- Applied Materials, Inc.
- Deepak Kamalanathan
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods and materials for modifying the threshold voltage of metal...
- Patent number 11,049,722
- Issue date Jun 29, 2021
- Applied Materials, Inc.
- Siddarth Krishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Soft reset for multi-level programming of memory cells in non-Von N...
- Patent number 11,017,856
- Issue date May 25, 2021
- Applied Materials, Inc.
- Deepak Kamalanathan
- G11 - INFORMATION STORAGE
Information Patent Grant
Shared metal gate stack with tunable work function
- Patent number 10,756,194
- Issue date Aug 25, 2020
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and apparatus for doping engineering and threshold voltage...
- Patent number 10,665,450
- Issue date May 26, 2020
- Applied Materials, Inc.
- Yixiong Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and materials for modifying the threshold voltage of metal...
- Patent number 10,615,041
- Issue date Apr 7, 2020
- Applied Materials, Inc.
- Siddarth Krishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with replacement gate stacks and method of formi...
- Patent number 10,553,498
- Issue date Feb 4, 2020
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Synthesis of metal nitride thin films materials using hydrazine der...
- Patent number 10,487,398
- Issue date Nov 26, 2019
- Applied Materials, Inc.
- Byunghoon Yoon
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods and structure to form high K metal gate stack with single w...
- Patent number 10,395,993
- Issue date Aug 27, 2019
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures with thinned dielectric material
- Patent number 10,361,132
- Issue date Jul 23, 2019
- GLOBALFOUNDRIES Inc.
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor stack with tunable work function
- Patent number 10,312,157
- Issue date Jun 4, 2019
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor stack with tunable work function
- Patent number 10,249,543
- Issue date Apr 2, 2019
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shared metal gate stack with tunable work function
- Patent number 10,243,055
- Issue date Mar 26, 2019
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Modified tungsten silicon
- Patent number 10,192,822
- Issue date Jan 29, 2019
- GLOBALFOUNDRIES Inc.
- Domingo A. Ferrer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor gate stack
- Patent number 10,079,182
- Issue date Sep 18, 2018
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with replacement gate stacks and method of formi...
- Patent number 10,074,574
- Issue date Sep 11, 2018
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shared metal gate stack with tunable work function
- Patent number 10,002,937
- Issue date Jun 19, 2018
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Expitaxially regrown heterostructure nanowire lateral tunnel field...
- Patent number 9,960,233
- Issue date May 1, 2018
- GLOBALFOUNDRIES Inc.
- Siddarth A. Krishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with replacement gate stacks and method of formi...
- Patent number 9,922,884
- Issue date Mar 20, 2018
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Alternative threshold voltage scheme via direct metal gate patterni...
- Patent number 9,905,476
- Issue date Feb 27, 2018
- GLOBALFOUNDRIES Inc.
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SILICON SUPER JUNCTION STRUCTURES FOR INCREASED THROUGHPUT
- Publication number 20240282813
- Publication date Aug 22, 2024
- Applied Materials, Inc.
- Amirhasan Nourbakhsh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON SUPER JUNCTION STRUCTURES FOR INCREASED VOLTAGE
- Publication number 20240282809
- Publication date Aug 22, 2024
- Applied Materials, Inc.
- Amirhasan NOURBAKHSH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE TRANSISTOR WITH CHANNEL COUNTER-DOPING AND POCKET-D...
- Publication number 20240258375
- Publication date Aug 1, 2024
- Applied Materials, Inc.
- Ashish Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING SEMICONDUCTOR STRUCTURES
- Publication number 20240154018
- Publication date May 9, 2024
- Applied Materials, Inc.
- Ria Someshwar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL OXIDE ANALOG SWITCH FOR NEUROMORPHIC SWITCHING
- Publication number 20230232727
- Publication date Jul 20, 2023
- Applied Materials, Inc.
- Deepak Kamalanathan
Information Patent Application
POWER DEVICE STRUCTURES AND METHODS OF MAKING
- Publication number 20230223256
- Publication date Jul 13, 2023
- Applied Materials, Inc.
- Amirhasan Nourbakhsh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIAS TEMPERATURE INSTABILITY CORRECTION IN MEMORY ARRAYS
- Publication number 20230058423
- Publication date Feb 23, 2023
- Applied Materials, Inc.
- Christophe J. Chevallier
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS OF FORMING SEMICONDUCTOR STRUCTURES
- Publication number 20230015781
- Publication date Jan 19, 2023
- Applied Materials, Inc.
- Ria Someshwar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EDGE PROTECTION ON SEMICONDUCTOR SUBSTRATES
- Publication number 20220310531
- Publication date Sep 29, 2022
- Applied Materials, Inc.
- Amirhasan Nourbakhsh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GRADED DOPING IN POWER DEVICES
- Publication number 20220254886
- Publication date Aug 11, 2022
- Applied Materials, Inc.
- Ashish Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING DOPED SILICIDE POWER DEVICES
- Publication number 20220165574
- Publication date May 26, 2022
- Applied Materials, Inc.
- Joshua S. Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEEP TRENCH INTEGRATION PROCESSES AND DEVICES
- Publication number 20220165610
- Publication date May 26, 2022
- Applied Materials, Inc.
- Lan Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOFT RESET FOR MULTI-LEVEL PROGRAMMING OF MEMORY CELLS IN NON-VON N...
- Publication number 20210280247
- Publication date Sep 9, 2021
- Applied Materials, Inc.
- Deepak Kamalanathan
- G11 - INFORMATION STORAGE
Information Patent Application
DUAL OXIDE ANALOG SWITCH FOR NEUROMORPHIC SWITCHING
- Publication number 20200395538
- Publication date Dec 17, 2020
- Applied Materials, Inc.
- Deepak Kamalanathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANNEALING PROCESSES FOR MEMORY DEVICES
- Publication number 20200357993
- Publication date Nov 12, 2020
- Applied Materials, Inc.
- Nicolas Louis Gabriel Breil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods And Materials For Modifying The Threshold Voltage Of Metal...
- Publication number 20200234959
- Publication date Jul 23, 2020
- Applied Materials, Inc.
- Siddarth Krishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE COATING FOR TRANSPARENT SUBSTRATE
- Publication number 20200194319
- Publication date Jun 18, 2020
- Applied Materials, Inc.
- Sage Toko Garrett DOSHAY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH K METAL GATE STACK WITH SINGLE WORK-FUNCTION METAL
- Publication number 20190318966
- Publication date Oct 17, 2019
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods And Materials For Modifying The Threshold Voltage Of Metal...
- Publication number 20190181011
- Publication date Jun 13, 2019
- Applied Materials, Inc.
- Siddarth Krishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND APPARATUS FOR DOPING ENGINEERING AND THRESHOLD VOLTAGE...
- Publication number 20190057863
- Publication date Feb 21, 2019
- YIXIONG YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHARED METAL GATE STACK WITH TUNABLE WORK FUNCTION
- Publication number 20190027572
- Publication date Jan 24, 2019
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR GATE STACK
- Publication number 20180330996
- Publication date Nov 15, 2018
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHARED METAL GATE STACK WITH TUNABLE WORK FUNCTION
- Publication number 20180190784
- Publication date Jul 5, 2018
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Synthesis of Metal Nitride Thin Films Materials using Hydrazine Der...
- Publication number 20180155827
- Publication date Jun 7, 2018
- Applied Materials, Inc.
- Byunghoon Yoon
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
INTEGRATED CIRCUIT WITH REPLACEMENT GATE STACKS AND METHOD OF FORMI...
- Publication number 20180102294
- Publication date Apr 12, 2018
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT WITH REPLACEMENT GATE STACKS AND METHOD OF FORMI...
- Publication number 20180096900
- Publication date Apr 5, 2018
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR STACK WITH TUNABLE WORK FUNCTION
- Publication number 20180047639
- Publication date Feb 15, 2018
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR STACK WITH TUNABLE WORK FUNCTION
- Publication number 20180047640
- Publication date Feb 15, 2018
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHARED METAL GATE STACK WITH TUNABLE WORK FUNCTION
- Publication number 20170358655
- Publication date Dec 14, 2017
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EXPITAXIALLY REGROWN HETEROSTRUCTURE NANOWIRE LATERAL TUNNEL FIELD...
- Publication number 20170263707
- Publication date Sep 14, 2017
- GLOBALFOUNDRIES INC.
- Siddarth A. Krishnan
- H01 - BASIC ELECTRIC ELEMENTS

Siddarth KRISHNAN

Person

Patents Grantslast 30 patents

Methods of forming semiconductor structures

Bias temperature instability correction in memory arrays

Edge protection on semiconductor substrates

Soft reset for multi-level programming of memory cells in non-von n...

Power device structures and methods of making

Graded doping in power devices

Dual oxide analog switch for neuromorphic switching

Methods of forming doped silicide power devices

Deep trench integration processes and devices

Annealing processes for memory devices

Non-uniform state spacing in multi-state memory element for low-pow...

Methods and materials for modifying the threshold voltage of metal...

Soft reset for multi-level programming of memory cells in non-Von N...

Shared metal gate stack with tunable work function

Methods and apparatus for doping engineering and threshold voltage...

Methods and materials for modifying the threshold voltage of metal...

Integrated circuit with replacement gate stacks and method of formi...

Synthesis of metal nitride thin films materials using hydrazine der...

Methods and structure to form high K metal gate stack with single w...

Structures with thinned dielectric material

Field effect transistor stack with tunable work function

Field effect transistor stack with tunable work function

Shared metal gate stack with tunable work function

Modified tungsten silicon

Field effect transistor gate stack

Integrated circuit with replacement gate stacks and method of formi...

Shared metal gate stack with tunable work function

Expitaxially regrown heterostructure nanowire lateral tunnel field...

Integrated circuit with replacement gate stacks and method of formi...

Alternative threshold voltage scheme via direct metal gate patterni...

Patents Applicationslast 30 patents

SILICON SUPER JUNCTION STRUCTURES FOR INCREASED THROUGHPUT

SILICON SUPER JUNCTION STRUCTURES FOR INCREASED VOLTAGE

SILICON CARBIDE TRANSISTOR WITH CHANNEL COUNTER-DOPING AND POCKET-D...

METHODS OF FORMING SEMICONDUCTOR STRUCTURES

DUAL OXIDE ANALOG SWITCH FOR NEUROMORPHIC SWITCHING

POWER DEVICE STRUCTURES AND METHODS OF MAKING

BIAS TEMPERATURE INSTABILITY CORRECTION IN MEMORY ARRAYS

METHODS OF FORMING SEMICONDUCTOR STRUCTURES

EDGE PROTECTION ON SEMICONDUCTOR SUBSTRATES

GRADED DOPING IN POWER DEVICES

METHODS OF FORMING DOPED SILICIDE POWER DEVICES

DEEP TRENCH INTEGRATION PROCESSES AND DEVICES

SOFT RESET FOR MULTI-LEVEL PROGRAMMING OF MEMORY CELLS IN NON-VON N...

DUAL OXIDE ANALOG SWITCH FOR NEUROMORPHIC SWITCHING

ANNEALING PROCESSES FOR MEMORY DEVICES

Methods And Materials For Modifying The Threshold Voltage Of Metal...

BACKSIDE COATING FOR TRANSPARENT SUBSTRATE

HIGH K METAL GATE STACK WITH SINGLE WORK-FUNCTION METAL

Methods And Materials For Modifying The Threshold Voltage Of Metal...

METHODS AND APPARATUS FOR DOPING ENGINEERING AND THRESHOLD VOLTAGE...

SHARED METAL GATE STACK WITH TUNABLE WORK FUNCTION

FIELD EFFECT TRANSISTOR GATE STACK

SHARED METAL GATE STACK WITH TUNABLE WORK FUNCTION

Synthesis of Metal Nitride Thin Films Materials using Hydrazine Der...

INTEGRATED CIRCUIT WITH REPLACEMENT GATE STACKS AND METHOD OF FORMI...

INTEGRATED CIRCUIT WITH REPLACEMENT GATE STACKS AND METHOD OF FORMI...

FIELD EFFECT TRANSISTOR STACK WITH TUNABLE WORK FUNCTION

FIELD EFFECT TRANSISTOR STACK WITH TUNABLE WORK FUNCTION

SHARED METAL GATE STACK WITH TUNABLE WORK FUNCTION

EXPITAXIALLY REGROWN HETEROSTRUCTURE NANOWIRE LATERAL TUNNEL FIELD...