Siddarth Sundaresan

Person

Dulles, VA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Inversion channel devices on multiple crystal orientations
- Patent number 12,051,720
- Issue date Jul 30, 2024
- GeneSiC Semiconductor Inc.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
And manufacture of power devices having increased cross over current
- Patent number 11,990,519
- Issue date May 21, 2024
- GeneSiC Semiconductor Inc.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Designs for silicon carbide MOSFETs
- Patent number 11,908,933
- Issue date Feb 20, 2024
- GeneSiC Semiconductor Inc.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
And manufacture of self-aligned power devices
- Patent number 11,901,432
- Issue date Feb 13, 2024
- GeneSiC Semiconductor Inc.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inversion channel devices on multiple crystal orientations
- Patent number 11,862,669
- Issue date Jan 2, 2024
- GeneSiC Semiconductor Inc.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacture of power devices having increased cross over current
- Patent number 11,798,994
- Issue date Oct 24, 2023
- GeneSiC Semiconductor Inc.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and manufacture of robust, high-performance devices
- Patent number 11,682,694
- Issue date Jun 20, 2023
- GeneSiC Semiconductor Inc.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Performance SiC diodes
- Patent number 11,626,487
- Issue date Apr 11, 2023
- GENESIC SEMICONDUCTOR INC.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Performance silicon carbide power devices
- Patent number 11,482,599
- Issue date Oct 25, 2022
- GeneSiC Semiconductor Inc.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Performance silicon carbide power devices
- Patent number 11,482,598
- Issue date Oct 25, 2022
- GENESIC SEMICONDUCTOR INC.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inversion channel devices on multiple crystal orientations
- Patent number 11,444,152
- Issue date Sep 13, 2022
- GENESIC SEMICONDUCTOR INC.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and manufacture of robust, high-performance devices
- Patent number 11,302,776
- Issue date Apr 12, 2022
- GeneSiC Semiconductor Inc.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Performance silicon carbide power devices
- Patent number 11,183,566
- Issue date Nov 23, 2021
- GeneSiC Semiconductor Inc.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacture of self-aligned power devices
- Patent number 11,075,277
- Issue date Jul 27, 2021
- GeneSiC Semiconductor Inc.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide power devices
- Patent number 11,049,962
- Issue date Jun 29, 2021
- GeneSiC Semiconductor Inc.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacture of robust, high-performance devices
- Patent number 11,031,461
- Issue date Jun 8, 2021
- GeneSiC Semiconductor Inc.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacture of power devices having increased cross over current
- Patent number 11,004,940
- Issue date May 11, 2021
- GeneSiC Semiconductor Inc.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacture of improved power devices
- Patent number 10,916,632
- Issue date Feb 9, 2021
- GeneSiC Semiconductor Inc.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Performance SiC Schottky diodes
- Patent number 10,840,385
- Issue date Nov 17, 2020
- GeneSiC Semiconductor Inc.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacture of power devices having inversion channel
- Patent number 10,763,356
- Issue date Sep 1, 2020
- GeneSiC Semiconductor Inc.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DESIGNS FOR SILICON CARBIDE MOSFETs
- Publication number 20240222505
- Publication date Jul 4, 2024
- GeneSiC Semiconductor Inc.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DESIGN AND MANUFACTURE OF SELF-ALIGNED POWER MOSFETs
- Publication number 20240128348
- Publication date Apr 18, 2024
- GeneSiC Semiconductor Inc.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DESIGNS FOR SILICON CARBIDE MOSFETS
- Publication number 20230282744
- Publication date Sep 7, 2023
- GeneSiC Semiconductor Inc.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INVERSION CHANNEL DEVICES ON MULTIPLE CRYSTAL ORIENTATIONS
- Publication number 20230040858
- Publication date Feb 9, 2023
- GeneSiC Semiconductor Inc.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND MANUFACTURE OF ROBUST, HIGH-PERFORMANCE DEVICES
- Publication number 20220384565
- Publication date Dec 1, 2022
- GeneSiC Semiconductor Inc.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERFORMANCE SILICON CARBIDE POWER DEVICES
- Publication number 20220367640
- Publication date Nov 17, 2022
- GeneSiC Semiconductor Inc.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERFORMANCE SILICON CARBIDE POWER DEVICES
- Publication number 20220359664
- Publication date Nov 10, 2022
- GeneSiC Semiconductor Inc.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INVERSION CHANNEL DEVICES ON MULTIPLE CRYSTAL ORIENTATIONS
- Publication number 20220352302
- Publication date Nov 3, 2022
- GeneSiC Semiconductor Inc.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INVERSION CHANNEL DEVICES ON MULTIPLE CRYSTAL ORIENTATIONS
- Publication number 20220069071
- Publication date Mar 3, 2022
- GeneSiC Semiconductor Inc.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DESIGN AND MANUFACTURE OF POWER DEVICES HAVING INCREASED CROSS OVER...
- Publication number 20220037472
- Publication date Feb 3, 2022
- GeneSiC Semiconductor Inc.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DESIGN AND MANUFACTURE OF POWER DEVICES HAVING INCREASED CROSS OVER...
- Publication number 20220037471
- Publication date Feb 3, 2022
- GeneSiC Semiconductor Inc.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DESIGN AND MANUFACTURE OF POWER DEVICES HAVING INCREASED CROSS OVER...
- Publication number 20220037473
- Publication date Feb 3, 2022
- GeneSiC Semiconductor Inc.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DESIGN AND MANUFACTURE OF POWER DEVICES HAVING INCREASED CROSS OVER...
- Publication number 20220037470
- Publication date Feb 3, 2022
- GeneSiC Semiconductor Inc.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DESIGN AND MANUFACTURE OF SELF-ALIGNED POWER DEVICES
- Publication number 20210359106
- Publication date Nov 18, 2021
- GeneSiC Semiconductor Inc.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DESIGN AND MANUFACTURE OF ROBUST, HIGH-PERFORMANCE DEVICES
- Publication number 20210273044
- Publication date Sep 2, 2021
- GeneSiC Semiconductor Inc.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DESIGN AND MANUFACTURE OF ROBUST, HIGH-PERFORMANCE DEVICES
- Publication number 20210257447
- Publication date Aug 19, 2021
- GeneSiC Semiconductor Inc.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERFORMANCE SIC DIODES
- Publication number 20210242307
- Publication date Aug 5, 2021
- GeneSiC Semiconductor Inc.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE POWER DEVICES
- Publication number 20210134996
- Publication date May 6, 2021
- GeneSiC Semiconductor Inc.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE POWER DEVICES
- Publication number 20210134998
- Publication date May 6, 2021
- GeneSiC Semiconductor Inc.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DESIGN AND MANUFACTURE OF ROBUST, HIGH-PERFORMANCE DEVICES
- Publication number 20210057519
- Publication date Feb 25, 2021
- GeneSiC Semiconductor Inc.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURE OF SELF-ALIGNED POWER DEVICES
- Publication number 20200388695
- Publication date Dec 10, 2020
- GeneSiC Semiconductor Inc.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DESIGN AND MANUFACTURE OF IMPROVED POWER DEVICES
- Publication number 20200295139
- Publication date Sep 17, 2020
- GeneSiC Semiconductor Inc.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS

Siddarth Sundaresan

Person

Patents Grantslast 30 patents

Inversion channel devices on multiple crystal orientations

And manufacture of power devices having increased cross over current

Designs for silicon carbide MOSFETs

And manufacture of self-aligned power devices

Inversion channel devices on multiple crystal orientations

Manufacture of power devices having increased cross over current

Method and manufacture of robust, high-performance devices

Performance SiC diodes

Performance silicon carbide power devices

Performance silicon carbide power devices

Inversion channel devices on multiple crystal orientations

Method and manufacture of robust, high-performance devices

Performance silicon carbide power devices

Manufacture of self-aligned power devices

Silicon carbide power devices

Manufacture of robust, high-performance devices

Manufacture of power devices having increased cross over current

Manufacture of improved power devices

Performance SiC Schottky diodes

Manufacture of power devices having inversion channel

Patents Applicationslast 30 patents

DESIGNS FOR SILICON CARBIDE MOSFETs

DESIGN AND MANUFACTURE OF SELF-ALIGNED POWER MOSFETs

DESIGNS FOR SILICON CARBIDE MOSFETS

INVERSION CHANNEL DEVICES ON MULTIPLE CRYSTAL ORIENTATIONS

METHOD AND MANUFACTURE OF ROBUST, HIGH-PERFORMANCE DEVICES

PERFORMANCE SILICON CARBIDE POWER DEVICES

PERFORMANCE SILICON CARBIDE POWER DEVICES

INVERSION CHANNEL DEVICES ON MULTIPLE CRYSTAL ORIENTATIONS

INVERSION CHANNEL DEVICES ON MULTIPLE CRYSTAL ORIENTATIONS

DESIGN AND MANUFACTURE OF POWER DEVICES HAVING INCREASED CROSS OVER...

DESIGN AND MANUFACTURE OF POWER DEVICES HAVING INCREASED CROSS OVER...

DESIGN AND MANUFACTURE OF POWER DEVICES HAVING INCREASED CROSS OVER...

DESIGN AND MANUFACTURE OF POWER DEVICES HAVING INCREASED CROSS OVER...

DESIGN AND MANUFACTURE OF SELF-ALIGNED POWER DEVICES

DESIGN AND MANUFACTURE OF ROBUST, HIGH-PERFORMANCE DEVICES

DESIGN AND MANUFACTURE OF ROBUST, HIGH-PERFORMANCE DEVICES

PERFORMANCE SIC DIODES

SILICON CARBIDE POWER DEVICES

SILICON CARBIDE POWER DEVICES

DESIGN AND MANUFACTURE OF ROBUST, HIGH-PERFORMANCE DEVICES

MANUFACTURE OF SELF-ALIGNED POWER DEVICES

DESIGN AND MANUFACTURE OF IMPROVED POWER DEVICES