Simon Jeannot

Person

Grenoble, FR

People

Patents Grantslast 30 patents

Information Patent Grant
Phase-change memory cell having a compact structure
- Patent number 11,957,067
- Issue date Apr 9, 2024
- STMicroelectronics (Crolles 2) SAS
- Philippe Boivin
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated circuit and method of manufacturing the same
- Patent number 11,495,609
- Issue date Nov 8, 2022
- STMicroelectronics (Crolles 2) SAS
- Fausto Piazza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase-change memory cell having a compact structure
- Patent number 11,031,550
- Issue date Jun 8, 2021
- STMicroelectronics (Crolles 2) SAS
- Philippe Boivin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit and method of manufacturing the same
- Patent number 10,833,094
- Issue date Nov 10, 2020
- STMicroelectronics (Crolles 2) SAS
- Fausto Piazza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory cell having a compact structure
- Patent number 10,707,270
- Issue date Jul 7, 2020
- STMicroelectronics (Crolles 2) SAS
- Philippe Boivin
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive RAM memory cell
- Patent number 10,482,957
- Issue date Nov 19, 2019
- STMicroelectronics (Rousset) SAS
- Philippe Boivin
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory cell having a compact structure
- Patent number 10,283,563
- Issue date May 7, 2019
- STMicroelectronics (Crolles 2) SAS
- Philippe Boivin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit and method of manufacturing the same
- Patent number 9,978,764
- Issue date May 22, 2018
- STMicroelectronics (Crolles 2) SAS
- Fausto Piazza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for determining a leakage current through an inter-gate diel...
- Patent number 9,852,801
- Issue date Dec 26, 2017
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Jean Coignus
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory cell having a compact structure
- Patent number 9,793,321
- Issue date Oct 17, 2017
- STMicroelectronics (Crolles 2) SAS
- Philippe Boivin
- G11 - INFORMATION STORAGE
Information Patent Grant
Process for producing, from an SOI and in particular an FDSOI type...
- Patent number 9,786,755
- Issue date Oct 10, 2017
- STMicroelectronics (Crolles 2) SAS
- Dominique Golanski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase-change memory cell having a compact structure
- Patent number 9,735,353
- Issue date Aug 15, 2017
- STMicroelectronics (Rousset) SAS
- Philippe Boivin
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for forming a three-dimensional structure of metal-insulator...
- Patent number 9,391,015
- Issue date Jul 12, 2016
- STMicroelectronics S.A.
- Simon Jeannot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a three-dimensional structure of metal-insulator...
- Patent number 8,609,530
- Issue date Dec 17, 2013
- STMicroelectronics S.A.
- Simon Jeannot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a porous dielectric element and corresponding d...
- Patent number 7,923,820
- Issue date Apr 12, 2011
- STMicroelectronics S.A.
- Simon Jeannot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a porous dielectric element and corresponding d...
- Patent number 7,732,348
- Issue date Jun 8, 2010
- STMicroelectronics S.A.
- Simon Jeannot
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ELECTRONIC DEVICE
- Publication number 20240407272
- Publication date Dec 5, 2024
- STMicroelectronics International N.V.
- Philippe BOIVIN
Information Patent Application
PHASE-CHANGE MEMORY CELL HAVING A COMPACT STRUCTURE
- Publication number 20240081160
- Publication date Mar 7, 2024
- STMicroelectronics (Crolles 2) SAS
- Philippe Boivin
- G11 - INFORMATION STORAGE
Information Patent Application
PHASE-CHANGE MEMORY CELL HAVING A COMPACT STRUCTURE
- Publication number 20210280779
- Publication date Sep 9, 2021
- STMicroelectronics (Crolles 2) SAS
- Philippe Boivin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT AND METHOD OF MANUFACTURING THE SAME
- Publication number 20210057426
- Publication date Feb 25, 2021
- STMicroelectronics (Crolles 2) SAS
- Fausto Piazza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE-CHANGE MEMORY CELL HAVING A COMPACT STRUCTURE
- Publication number 20190326510
- Publication date Oct 24, 2019
- STMicroelectronics (Crolles 2) SAS
- Philippe Boivin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY CELL HAVING A COMPACT STRUCTURE
- Publication number 20190214434
- Publication date Jul 11, 2019
- STMicroelectronics (Crolles 2) SAS
- Philippe Boivin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RAM MEMORY CELL
- Publication number 20180330780
- Publication date Nov 15, 2018
- STMicroelectronics (Rousset) SAS
- Philippe BOIVIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT AND METHOD OF MANUFACTURING THE SAME
- Publication number 20180233511
- Publication date Aug 16, 2018
- STMicroelectronics (Crolles 2) SAS
- Fausto Piazza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY CELL HAVING A COMPACT STRUCTURE
- Publication number 20180012935
- Publication date Jan 11, 2018
- STMicroelectronics (Crolles 2) SAS
- Philippe Boivin
- G11 - INFORMATION STORAGE
Information Patent Application
PHASE-CHANGE MEMORY CELL HAVING A COMPACT STRUCTURE
- Publication number 20170317275
- Publication date Nov 2, 2017
- STMicroelectronics (Crolles 2) SAS
- Philippe Boivin
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATED CIRCUIT AND METHOD OF MANUFACTURING THE SAME
- Publication number 20170186759
- Publication date Jun 29, 2017
- STMicroelectronics (Crolles 2) SAS
- Fausto Piazza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY CELL HAVING A COMPACT STRUCTURE
- Publication number 20160380030
- Publication date Dec 29, 2016
- STMicroelectronics (Crolles 2) SAS
- Philippe Boivin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE-CHANGE MEMORY CELL HAVING A COMPACT STRUCTURE
- Publication number 20160380190
- Publication date Dec 29, 2016
- STMicroelectronics (Crolles 2) SAS
- Philippe Boivin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR PRODUCING, FROM AN SOI AND IN PARTICULAR AN FDSOI TYPE...
- Publication number 20160276451
- Publication date Sep 22, 2016
- STMicroelectronics (Crolles 2) SAS
- Dominique Golanski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A THREE-DIMENSIONAL STRUCTURE OF METAL-INSULATOR...
- Publication number 20140159202
- Publication date Jun 12, 2014
- Simon Jeannot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A THREE-DIMENSIONAL STRUCTURE OF METAL-INSULATOR...
- Publication number 20110227194
- Publication date Sep 22, 2011
- STMicroelectronics S.A.
- Simon Jeannot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR FABRICATING AN INTEGRATED CIRCUIT INCLUDING A METAL-INS...
- Publication number 20110221035
- Publication date Sep 15, 2011
- STMicroelectronics S.A.
- Simon Jeannot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PRODUCING A POROUS DIELECTRIC ELEMENT AND CORRESPONDING D...
- Publication number 20100200964
- Publication date Aug 12, 2010
- STMicroelectronics S.A.
- Simon Jeannot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PRODUCING A POROUS DIELECTRIC ELEMENT AND CORRESPONDING D...
- Publication number 20080142929
- Publication date Jun 19, 2008
- STMicroelectronics S.A.
- Simon Jeannot
- H01 - BASIC ELECTRIC ELEMENTS

Simon Jeannot

Person

Patents Grantslast 30 patents

Phase-change memory cell having a compact structure

Integrated circuit and method of manufacturing the same

Phase-change memory cell having a compact structure

Integrated circuit and method of manufacturing the same

Resistive memory cell having a compact structure

Resistive RAM memory cell

Resistive memory cell having a compact structure

Integrated circuit and method of manufacturing the same

Method for determining a leakage current through an inter-gate diel...

Resistive memory cell having a compact structure

Process for producing, from an SOI and in particular an FDSOI type...

Phase-change memory cell having a compact structure

Method for forming a three-dimensional structure of metal-insulator...

Method for forming a three-dimensional structure of metal-insulator...

Method of producing a porous dielectric element and corresponding d...

Method of producing a porous dielectric element and corresponding d...

Patents Applicationslast 30 patents

ELECTRONIC DEVICE

PHASE-CHANGE MEMORY CELL HAVING A COMPACT STRUCTURE

PHASE-CHANGE MEMORY CELL HAVING A COMPACT STRUCTURE

INTEGRATED CIRCUIT AND METHOD OF MANUFACTURING THE SAME

PHASE-CHANGE MEMORY CELL HAVING A COMPACT STRUCTURE

RESISTIVE MEMORY CELL HAVING A COMPACT STRUCTURE

RESISTIVE RAM MEMORY CELL

INTEGRATED CIRCUIT AND METHOD OF MANUFACTURING THE SAME

RESISTIVE MEMORY CELL HAVING A COMPACT STRUCTURE

PHASE-CHANGE MEMORY CELL HAVING A COMPACT STRUCTURE

INTEGRATED CIRCUIT AND METHOD OF MANUFACTURING THE SAME

RESISTIVE MEMORY CELL HAVING A COMPACT STRUCTURE

PHASE-CHANGE MEMORY CELL HAVING A COMPACT STRUCTURE

PROCESS FOR PRODUCING, FROM AN SOI AND IN PARTICULAR AN FDSOI TYPE...

METHOD FOR FORMING A THREE-DIMENSIONAL STRUCTURE OF METAL-INSULATOR...

METHOD FOR FORMING A THREE-DIMENSIONAL STRUCTURE OF METAL-INSULATOR...

PROCESS FOR FABRICATING AN INTEGRATED CIRCUIT INCLUDING A METAL-INS...

METHOD OF PRODUCING A POROUS DIELECTRIC ELEMENT AND CORRESPONDING D...

METHOD OF PRODUCING A POROUS DIELECTRIC ELEMENT AND CORRESPONDING D...