Simone Lavanga

Person

Drobollach, AT

People

Patents Grantslast 30 patents

Information Patent Grant
Type III-V semiconductor device with structured passivation
- Patent number 12,230,700
- Issue date Feb 18, 2025
- Infineon Technologies Austria AG
- Simone Lavanga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor substrate and method of forming a compound s...
- Patent number 10,403,496
- Issue date Sep 3, 2019
- Infineon Technologies Austria AG
- Simone Lavanga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor wafer
- Patent number 10,403,724
- Issue date Sep 3, 2019
- Infineon Technologies AG
- Albert Birner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Normally off HEMT with self aligned gate structure
- Patent number 10,204,995
- Issue date Feb 12, 2019
- Infineon Technologies Austria AG
- Simone Lavanga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a semiconductor wafer that includes producing...
- Patent number 10,074,721
- Issue date Sep 11, 2018
- Infineon Technologies AG
- Albert Birner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor lithography alignment feature with epitaxy blocker
- Patent number 9,922,936
- Issue date Mar 20, 2018
- Infineon Technologies Austria AG
- Simone Lavanga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 9,825,139
- Issue date Nov 21, 2017
- Infineon Technologies Austria AG
- Gilberto Curatola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate with stress relief regions
- Patent number 9,779,935
- Issue date Oct 3, 2017
- Infineon Technologies Austria AG
- Simone Lavanga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 9,564,524
- Issue date Feb 7, 2017
- Infineon Technologies Austria AG
- Gilberto Curatola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RF power HEMT grown on a silicon or SiC substrate with a front-side...
- Patent number 8,952,421
- Issue date Feb 10, 2015
- Infineon Technologies Austria AG
- Gilberto Curatola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-doped ohmic contacts for compound semiconductor devices
- Patent number 8,900,985
- Issue date Dec 2, 2014
- Infineon Technologies Austria AG
- Gilberto Curatola
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TYPE III-V SEMICONDUCTOR DEVICE WITH STRUCTURED PASSIVATION
- Publication number 20250176206
- Publication date May 29, 2025
- Infineon Technologies Austria AG
- Simone Lavanga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Wafer
- Publication number 20180374921
- Publication date Dec 27, 2018
- INFINEON TECHNOLOGIES AG
- Albert Birner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Normally Off HEMT with Self Aligned Gate Structure
- Publication number 20180151681
- Publication date May 31, 2018
- Infineon Technologies Austria AG
- Simone Lavanga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Wafer and Method
- Publication number 20180083107
- Publication date Mar 22, 2018
- INFINEON TECHNOLOGIES AG
- Albert Birner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Lithography Alignment Feature with Epitaxy Blocker
- Publication number 20180061772
- Publication date Mar 1, 2018
- Infineon Technologies Austria AG
- Simone Lavanga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Compound Semiconductor Substrate and Method of Forming a Compound S...
- Publication number 20170365464
- Publication date Dec 21, 2017
- Infineon Technologies Austria AG
- Simone Lavanga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Substrate with Stress Relief Regions
- Publication number 20170287709
- Publication date Oct 5, 2017
- Infineon Technologies Austria AG
- Simone Lavanga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20170148883
- Publication date May 25, 2017
- Infineon Technologies Austria AG
- Gilberto Curatola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20150349105
- Publication date Dec 3, 2015
- Infineon Technologies Austria AG
- Gilberto Curatola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RF POWER HEMT GROWN ON A SILICON OR SIC SUBSTRATE WITH A FRONT-SIDE...
- Publication number 20140103398
- Publication date Apr 17, 2014
- Infineon Technologies Austria AG
- Gilberto Curatola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-DOPED OHMIC CONTACTS FOR COMPOUND SEMICONDUCTOR DEVICES
- Publication number 20140106516
- Publication date Apr 17, 2014
- Infineon Technologies Austria AG
- Gilberto Curatola
- H01 - BASIC ELECTRIC ELEMENTS

Simone Lavanga

Person

Patents Grantslast 30 patents

Type III-V semiconductor device with structured passivation

Compound semiconductor substrate and method of forming a compound s...

Semiconductor wafer

Normally off HEMT with self aligned gate structure

Method of fabricating a semiconductor wafer that includes producing...

Semiconductor lithography alignment feature with epitaxy blocker

Semiconductor device and method

Semiconductor substrate with stress relief regions

Semiconductor device and method

RF power HEMT grown on a silicon or SiC substrate with a front-side...

Self-doped ohmic contacts for compound semiconductor devices

Patents Applicationslast 30 patents

TYPE III-V SEMICONDUCTOR DEVICE WITH STRUCTURED PASSIVATION

Semiconductor Wafer

Normally Off HEMT with Self Aligned Gate Structure

Semiconductor Wafer and Method

Semiconductor Lithography Alignment Feature with Epitaxy Blocker

Compound Semiconductor Substrate and Method of Forming a Compound S...

Semiconductor Substrate with Stress Relief Regions

SEMICONDUCTOR DEVICE AND METHOD

SEMICONDUCTOR DEVICE AND METHOD

RF POWER HEMT GROWN ON A SILICON OR SIC SUBSTRATE WITH A FRONT-SIDE...

SELF-DOPED OHMIC CONTACTS FOR COMPOUND SEMICONDUCTOR DEVICES