Siyang Liu

Person

Jiangsu, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Heterojunction semiconductor device with low on-resistance
- Patent number 12,224,340
- Issue date Feb 11, 2025
- Southeast University
- Siyang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device and manufacturing method therefor
- Patent number 12,183,818
- Issue date Dec 31, 2024
- SOUTHEAST UNIVERSITY
- Weifeng Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-threshold power semiconductor device and manufacturing method...
- Patent number 12,107,167
- Issue date Oct 1, 2024
- Southeast University
- Siyang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement-mode N-channel and P-channel GaN device integration str...
- Patent number 12,051,742
- Issue date Jul 30, 2024
- Southeast University
- Long Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithically integrated GaN-based half-bridge circuit and half-br...
- Patent number 12,046,594
- Issue date Jul 23, 2024
- Southeast University
- Long Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN power semiconductor device integrated with self-feedback gate c...
- Patent number 12,027,516
- Issue date Jul 2, 2024
- Southeast University
- Siyang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral double-diffused metal oxide semiconductor field effect tran...
- Patent number 11,894,458
- Issue date Feb 6, 2024
- Southeast University
- Jiaxing Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride power device and manufacturing method thereof
- Patent number 11,515,395
- Issue date Nov 29, 2022
- Southeast University
- Siyang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction semiconductor device having high blocking capability
- Patent number 11,322,606
- Issue date May 3, 2022
- Southeast University
- Weifeng Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Graphene channel silicon carbide power semiconductor transistor
- Patent number 11,158,708
- Issue date Oct 26, 2021
- Southeast University
- Weifeng Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated bootstrap high-voltage driver chip and technological str...
- Patent number 10,340,906
- Issue date Jul 2, 2019
- SOUTHEAST UNIVERSITY
- Weifeng Sun
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Power module of square flat pin-free packaging structure
- Patent number 10,056,313
- Issue date Aug 21, 2018
- Southeast University
- Siyang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transverse ultra-thin insulated gate bipolar transistor having high...
- Patent number 9,240,469
- Issue date Jan 19, 2016
- SOUTHEAST UNIVERSITY
- Weifeng Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-current N-type silicon-on-insulator lateral insulated-gate bip...
- Patent number 9,159,818
- Issue date Oct 13, 2015
- Southeast University
- Weifeng Sun
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
P-TYPE LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE AND MANU...
- Publication number 20250056834
- Publication date Feb 13, 2025
- SOUTHEAST UNIVERSITY
- Long ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCEMENT-MODE N-CHANNEL AND P-CHANNEL GAN DEVICE INTEGRATION STR...
- Publication number 20240266430
- Publication date Aug 8, 2024
- SOUTHEAST UNIVERSITY
- Long ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DMOS DEVICE HAVING JUNCTION FIELD PLATE AND MANUFACTURING METHOD TH...
- Publication number 20240222473
- Publication date Jul 4, 2024
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Feng LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL DOUBLE-DIFFUSED METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRAN...
- Publication number 20230019004
- Publication date Jan 19, 2023
- SOUTHEAST UNIVERSITY
- Jiaxing WEI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-THRESHOLD POWER SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD...
- Publication number 20220367716
- Publication date Nov 17, 2022
- SOUTHEAST UNIVERSITY
- Siyang LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE POWER DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20220223692
- Publication date Jul 14, 2022
- SOUTHEAST UNIVERSITY
- SIYANG LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
- Publication number 20220115532
- Publication date Apr 14, 2022
- SOUTHEAST UNIVERSITY
- Weifeng SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION SEMICONDUCTOR DEVICE WITH LOW ON-RESISTANCE
- Publication number 20220069115
- Publication date Mar 3, 2022
- SOUTHEAST UNIVERSITY
- Siyang LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GRAPHENE CHANNEL SILICON CARBIDE POWER SEMICONDUCTOR TRANSISTOR
- Publication number 20210336009
- Publication date Oct 28, 2021
- SOUTHEAST UNIVERSITY
- Weifeng SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION SEMICONDUCTOR DEVICE HAVING HIGH BLOCKING CAPABILITY
- Publication number 20210234030
- Publication date Jul 29, 2021
- SOUTHEAST UNIVERSITY
- Weifeng SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED BOOTSTRAP HIGH-VOLTAGE DRIVER CHIP AND TECHNOLOGICAL STR...
- Publication number 20180262186
- Publication date Sep 13, 2018
- SOUTHEAST UNIVERSITY
- Weifeng SUN
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Power Module of Square Flat Pin-Free Packaging Structure
- Publication number 20180174942
- Publication date Jun 21, 2018
- SOUTHEAST UNIVERSITY
- Siyang LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSVERSE ULTRA-THIN INSULATED GATE BIPOLAR TRANSISTOR HAVING HIGH...
- Publication number 20150270377
- Publication date Sep 24, 2015
- SOUTHEAST UNIVERSITY
- Weifeng Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-CURRENT N-TYPE SILICON-ON-INSULATOR LATERAL INSULATED-GATE BIP...
- Publication number 20140306266
- Publication date Oct 16, 2014
- Weifeng Sun
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Heterojunction semiconductor device with low on-resistance

Power semiconductor device and manufacturing method therefor

High-threshold power semiconductor device and manufacturing method...

Enhancement-mode N-channel and P-channel GaN device integration str...

Monolithically integrated GaN-based half-bridge circuit and half-br...

GaN power semiconductor device integrated with self-feedback gate c...

Lateral double-diffused metal oxide semiconductor field effect tran...

Gallium nitride power device and manufacturing method thereof

Heterojunction semiconductor device having high blocking capability

Graphene channel silicon carbide power semiconductor transistor

Integrated bootstrap high-voltage driver chip and technological str...

Power module of square flat pin-free packaging structure

Transverse ultra-thin insulated gate bipolar transistor having high...

High-current N-type silicon-on-insulator lateral insulated-gate bip...

Patents Applicationslast 30 patents

P-TYPE LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE AND MANU...

ENHANCEMENT-MODE N-CHANNEL AND P-CHANNEL GAN DEVICE INTEGRATION STR...

DMOS DEVICE HAVING JUNCTION FIELD PLATE AND MANUFACTURING METHOD TH...

LATERAL DOUBLE-DIFFUSED METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRAN...

HIGH-THRESHOLD POWER SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD...

GALLIUM NITRIDE POWER DEVICE AND MANUFACTURING METHOD THEREOF

POWER SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

HETEROJUNCTION SEMICONDUCTOR DEVICE WITH LOW ON-RESISTANCE

GRAPHENE CHANNEL SILICON CARBIDE POWER SEMICONDUCTOR TRANSISTOR

HETEROJUNCTION SEMICONDUCTOR DEVICE HAVING HIGH BLOCKING CAPABILITY

INTEGRATED BOOTSTRAP HIGH-VOLTAGE DRIVER CHIP AND TECHNOLOGICAL STR...

Power Module of Square Flat Pin-Free Packaging Structure

TRANSVERSE ULTRA-THIN INSULATED GATE BIPOLAR TRANSISTOR HAVING HIGH...

HIGH-CURRENT N-TYPE SILICON-ON-INSULATOR LATERAL INSULATED-GATE BIP...