Siyoung Choi

Person

Gyeonggi-do, KR

People

Patents Grantslast 30 patents

Information Patent Grant
Nonvolatile memory device and method for fabricating the same
- Patent number 11,871,571
- Issue date Jan 9, 2024
- Samsung Electronics Co., Ltd.
- Soodoo Chae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor having fin base and at least one fin protru...
- Patent number RE49375
- Issue date Jan 17, 2023
- Samsung Electronics Co., Ltd.
- Myeong-cheol Kim
Information Patent Grant
Nonvolatile memory device and method for fabricating the same
- Patent number 11,387,249
- Issue date Jul 12, 2022
- Samsung Electronics Co., Ltd.
- Soodoo Chae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor having fin base and at least one fin protru...
- Patent number RE48367
- Issue date Dec 22, 2020
- Samsung Electronics Co., Ltd.
- Myeong-cheol Kim
Information Patent Grant
Nonvolatile memory device and method for fabricating the same
- Patent number 10,546,872
- Issue date Jan 28, 2020
- Samsung Electronics Co., Ltd.
- Soodoo Chae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile memory device and method for fabricating the same
- Patent number 9,735,170
- Issue date Aug 15, 2017
- Samsung Electronics Co., Ltd.
- Soodoo Chae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wafer loaders having buffer zones
- Patent number 9,502,274
- Issue date Nov 22, 2016
- Samsung Electronics Co., Ltd.
- Yi Koan Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile memory device and method for fabricating the same
- Patent number 9,245,839
- Issue date Jan 26, 2016
- Samsung Electronics Co., Ltd.
- Soodoo Chae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor having fin base and at lease one fin protru...
- Patent number 8,987,836
- Issue date Mar 24, 2015
- Samsung Electronics Co., Ltd.
- Myeong-cheol Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional non-volatile memory devices having highly integra...
- Patent number 8,654,584
- Issue date Feb 18, 2014
- Samsung Electronics Co., Ltd.
- Kinam Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory device and method for fabricating the same
- Patent number 8,541,831
- Issue date Sep 24, 2013
- Samsung Electronics Co., Ltd.
- Soodoo Chae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile memory devices including deep and high density trapping...
- Patent number 8,431,984
- Issue date Apr 30, 2013
- Samsung Electronics Co., Ltd.
- Kwangmin Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory devices including multiple charge trapping layers
- Patent number 8,426,907
- Issue date Apr 23, 2013
- Samsung Electronics Co., Ltd.
- Kwangmin Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile semiconductor memory devices having charge trap layers...
- Patent number 8,319,276
- Issue date Nov 27, 2012
- Samsung Electronics Co., Ltd.
- Toshiro Nakanishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile memory device and method of forming the same
- Patent number 8,278,698
- Issue date Oct 2, 2012
- Samsung Electronics Co., Ltd.
- Toshiro Nakanishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating nonvolatile memory device
- Patent number 8,236,647
- Issue date Aug 7, 2012
- Samsung Electronics Co., Ltd.
- Juyul Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile memory devices
- Patent number 8,232,590
- Issue date Jul 31, 2012
- Samsung Electronics Co., Ltd.
- Byoungsun Ju
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming semiconductor devices
- Patent number 8,183,141
- Issue date May 22, 2012
- Samsung Electronics Co., Ltd.
- Sangjin Hyun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-structured Si-fin and method of manufacture
- Patent number 7,534,686
- Issue date May 19, 2009
- Samsung Electronics Co., Ltd.
- Deok Hyung Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-structured Si-fin
- Patent number 7,141,856
- Issue date Nov 28, 2006
- Samsung Electronics Co., Ltd.
- Deok Hyung Lee
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240164103
- Publication date May 16, 2024
- Samsung Electronics Co., Ltd.
- Soodoo Chae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240155840
- Publication date May 9, 2024
- Samsung Electronics Co., Ltd.
- Soodoo Chae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20220359566
- Publication date Nov 10, 2022
- Samsung Electronics Co., Ltd.
- Soodoo Chae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20220059567
- Publication date Feb 24, 2022
- Samsung Electronics Co., Ltd.
- Soodoo Chae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20220037355
- Publication date Feb 3, 2022
- Samsung Electronics Co., Ltd.
- Soodoo Chae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20200111811
- Publication date Apr 9, 2020
- Samsung Electronics Co., Ltd.
- Soodoo Chae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20170301690
- Publication date Oct 19, 2017
- Soodoo Chae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20160111440
- Publication date Apr 21, 2016
- Soodoo Chae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAFER LOADERS HAVING BUFFER ZONES
- Publication number 20150068948
- Publication date Mar 12, 2015
- Samsung Electronics Co., Ltd.
- Yi Koan HONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20140015128
- Publication date Jan 16, 2014
- Soodoo Chae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTORS
- Publication number 20130277720
- Publication date Oct 24, 2013
- Samsung Electronics Co., Ltd.
- Myeong-cheol KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Semiconductor Devices
- Publication number 20120214296
- Publication date Aug 23, 2012
- Sangjin Hyun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Three-Dimensional Non-Volatile Memory Devices Having Highly Integra...
- Publication number 20110292731
- Publication date Dec 1, 2011
- Kinam Kim
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATILE MEMORY DEVICES INCLUDING DEEP AND HIGH DENSITY TRAPPING...
- Publication number 20110147825
- Publication date Jun 23, 2011
- SAMSUNG ELECTRONICS CO., LTD.
- Kwangmin Park
- G11 - INFORMATION STORAGE
Information Patent Application
Nonvolatile Memory Devices
- Publication number 20110001181
- Publication date Jan 6, 2011
- Byoungsun Ju
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-Volatile Semiconductor Memory Devices Having Charge Trap Layers...
- Publication number 20100252877
- Publication date Oct 7, 2010
- Toshiro Nakanishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nonvolatile Memory Device and Method of Forming the Same
- Publication number 20100213536
- Publication date Aug 26, 2010
- Toshiro Nakanishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nonvolatile memory device and method for fabricating the same
- Publication number 20100133599
- Publication date Jun 3, 2010
- Samsung Electronics Co., Ltd.
- Soodoo Chae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONVOLATILE MEMORY DEVICES INCLUDING MULTIPLE CHARGE TRAPPING LAYERS
- Publication number 20100123181
- Publication date May 20, 2010
- SAMSUNG ELECTRONICS CO., LTD.
- Kwangmin Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Semiconductor Devices
- Publication number 20100099245
- Publication date Apr 22, 2010
- Sangjin Hyun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating nonvolatile memory device
- Publication number 20100048012
- Publication date Feb 25, 2010
- Juyul Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor structure having low resistance and method of manufac...
- Publication number 20040238876
- Publication date Dec 2, 2004
- Sunpil Youn
- H01 - BASIC ELECTRIC ELEMENTS

Siyoung Choi

Person

Patents Grantslast 30 patents

Nonvolatile memory device and method for fabricating the same

Field effect transistor having fin base and at least one fin protru...

Nonvolatile memory device and method for fabricating the same

Field effect transistor having fin base and at least one fin protru...

Nonvolatile memory device and method for fabricating the same

Nonvolatile memory device and method for fabricating the same

Wafer loaders having buffer zones

Nonvolatile memory device and method for fabricating the same

Field effect transistor having fin base and at lease one fin protru...

Three-dimensional non-volatile memory devices having highly integra...

Nonvolatile memory device and method for fabricating the same

Nonvolatile memory devices including deep and high density trapping...

Nonvolatile memory devices including multiple charge trapping layers

Non-volatile semiconductor memory devices having charge trap layers...

Nonvolatile memory device and method of forming the same

Method for fabricating nonvolatile memory device

Nonvolatile memory devices

Methods of forming semiconductor devices

Multi-structured Si-fin and method of manufacture

Multi-structured Si-fin

Patents Applicationslast 30 patents

NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

WAFER LOADERS HAVING BUFFER ZONES

NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

FIN FIELD EFFECT TRANSISTORS

Methods of Forming Semiconductor Devices

Three-Dimensional Non-Volatile Memory Devices Having Highly Integra...

NONVOLATILE MEMORY DEVICES INCLUDING DEEP AND HIGH DENSITY TRAPPING...

Nonvolatile Memory Devices

Non-Volatile Semiconductor Memory Devices Having Charge Trap Layers...

Nonvolatile Memory Device and Method of Forming the Same

Nonvolatile memory device and method for fabricating the same

NONVOLATILE MEMORY DEVICES INCLUDING MULTIPLE CHARGE TRAPPING LAYERS

Methods of Forming Semiconductor Devices

Method for fabricating nonvolatile memory device

Semiconductor structure having low resistance and method of manufac...