Sonam SHERPA

Person

Fishkill, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of atomic layer etching of oxide
- Patent number 11,658,037
- Issue date May 23, 2023
- Tokyo Electron Limited
- Sonam D. Sherpa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for area-selective etching of silicon nitride layers for the...
- Patent number 10,991,594
- Issue date Apr 27, 2021
- Tokyo Electron Limited
- Sonam D. Sherpa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of isotropic etching of silicon oxide utilizing fluorocarbon...
- Patent number 10,937,662
- Issue date Mar 2, 2021
- Tokyo Electron Limited
- Sonam D. Sherpa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of etching silicon nitride layers for the manufacture of mic...
- Patent number 10,818,507
- Issue date Oct 27, 2020
- Tokyo Electron Limited
- Sonam D. Sherpa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of atomic layer etching of oxide
- Patent number 10,770,305
- Issue date Sep 8, 2020
- Tokyo Electron Limited
- Sonam D. Sherpa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of conformal etching selective to other materials
- Patent number 10,699,911
- Issue date Jun 30, 2020
- Tokyo Electron Limited
- Erdinc Karakas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective oxide etching method for self-aligned multiple patterning
- Patent number 10,658,192
- Issue date May 19, 2020
- Tokyo Electron Limited
- Sonam D. Sherpa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective nitride etching method for self-aligned multiple patterning
- Patent number 10,607,852
- Issue date Mar 31, 2020
- Tokyo Electron Limited
- Sonam D. Sherpa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of quasi-atomic layer etching of silicon nitride
- Patent number 10,515,814
- Issue date Dec 24, 2019
- Tokyo Electron Limited
- Sonam D. Sherpa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of preferential silicon nitride etching using sulfur hexaflu...
- Patent number 10,446,407
- Issue date Oct 15, 2019
- Tokyo Electron Limited
- Sonam D. Sherpa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of anisotropic extraction of silicon nitride mandrel for fab...
- Patent number 10,446,405
- Issue date Oct 15, 2019
- Tokyo Electron Limited
- Sonam D. Sherpa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of quasi-atomic layer etching of silicon nitride
- Patent number 10,431,470
- Issue date Oct 1, 2019
- Tokyo Electron Limited
- Sonam D. Sherpa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of selective silicon nitride etching
- Patent number 10,381,235
- Issue date Aug 13, 2019
- Tokyo Electron Limited
- Alok Ranjan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of sidewall image transfer
- Patent number 10,373,828
- Issue date Aug 6, 2019
- Tokyo Electron Limited
- Alok Ranjan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of quasi-atomic layer etching of silicon nitride
- Patent number 10,312,102
- Issue date Jun 4, 2019
- Tokyo Electron Limited
- Sonam D. Sherpa
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method of quasi-atomic layer etching of silicon nitride
- Patent number 10,304,688
- Issue date May 28, 2019
- Tokyo Electron Limited
- Sonam D. Sherpa
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method of anisotropic extraction of silicon nitride mandrel for fab...
- Patent number 10,192,743
- Issue date Jan 29, 2019
- Tokyo Electron Limited
- Sonam D. Sherpa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for atomic layer etching
- Patent number 9,881,807
- Issue date Jan 30, 2018
- Tokyo Electron Limited
- Alok Ranjan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for ESC charge control for wafer clamping
- Patent number 9,530,626
- Issue date Dec 27, 2016
- Tokyo Electron Limited
- Jason Marion
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
BOW MITIGATION IN HIGH ASPECT RATIO OXIDE AND NITRIDE ETCHES
- Publication number 20250118570
- Publication date Apr 10, 2025
- Applied Materials, Inc.
- Mir Abdulla Al Galib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE HARDMASK ETCH FOR SEMICONDUCTOR PROCESSING
- Publication number 20250118557
- Publication date Apr 10, 2025
- Applied Materials, Inc.
- Sonam Dorje Sherpa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LINE EDGE ROUGHNESS (LER) IMPROVEMENT OF RESIST PATTERNS
- Publication number 20250112056
- Publication date Apr 3, 2025
- Applied Materials, Inc.
- Sonam Dorje Sherpa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IN-SITU SIDEWALL PASSIVATION TOWARD THE BOTTOM OF HIGH ASPECT RATIO...
- Publication number 20250095984
- Publication date Mar 20, 2025
- Applied Materials, Inc.
- Sonam Dorje Sherpa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF ETCHING SILICON-AND-OXYGEN-CONTAINING FEATURES AT LOW TE...
- Publication number 20250069895
- Publication date Feb 27, 2025
- Applied Materials, Inc.
- Anatoli Chlenov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CYCLIC ETCH OF SILICON OXIDE AND SILICON NITRIDE
- Publication number 20250022714
- Publication date Jan 16, 2025
- Applied Materials, Inc.
- Sonam Dorje Sherpa
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Application
Method of Atomic Layer Etching of Oxide
- Publication number 20200273713
- Publication date Aug 27, 2020
- TOKYO ELECTRON LIMITED
- Sonam D. Sherpa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Isotropic Etching of Silicon Oxide Utilizing Fluorocarbon...
- Publication number 20200006081
- Publication date Jan 2, 2020
- TOKYO ELECTRON LIMITED
- Sonam D. Sherpa
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Application
METHOD FOR AREA-SELECTIVE ETCHING OF SILICON NITRIDE LAYERS FOR THE...
- Publication number 20190393048
- Publication date Dec 26, 2019
- TOKYO ELECTRON LIMITED
- Sonam D. Sherpa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Atomic Layer Etching of Oxide
- Publication number 20190348296
- Publication date Nov 14, 2019
- TOKYO ELECTRON LIMITED
- Sonam D. Sherpa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF ETCHING SILICON NITRIDE LAYERS FOR THE MANUFACTURE OF MIC...
- Publication number 20190348295
- Publication date Nov 14, 2019
- TOKYO ELECTRON LIMITED
- Sonam D. Sherpa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF QUASI-ATOMIC LAYER ETCHING OF SILICON NITRIDE
- Publication number 20190252197
- Publication date Aug 15, 2019
- TOKYO ELECTRON LIMITED
- Sonam D. Sherpa
- C01 - INORGANIC CHEMISTRY
Information Patent Application
Method of Conformal Etching Selective To Other Materials
- Publication number 20190139779
- Publication date May 9, 2019
- TOKYO ELECTRON LIMITED
- Erdinc Karakas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE NITRIDE ETCHING METHOD FOR SELF-ALIGNED MULTIPLE PATTERNING
- Publication number 20190080924
- Publication date Mar 14, 2019
- TOKYO ELECTRON LIMITED
- Sonam D. Sherpa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE OXIDE ETCHING METHOD FOR SELF-ALIGNED MULTIPLE PATTERNING
- Publication number 20190080925
- Publication date Mar 14, 2019
- TOKYO ELECTRON LIMITED
- Sonam D. Sherpa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF ANISOTROPIC EXTRACTION OF SILICON NITRIDE MANDREL FOR FAB...
- Publication number 20180277386
- Publication date Sep 27, 2018
- TOKYO ELECTRON LIMITED
- Sonam D. Sherpa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF QUASI-ATOMIC LAYER ETCHING OF SILICON NITRIDE
- Publication number 20180277385
- Publication date Sep 27, 2018
- TOKYO ELECTRON LIMITED
- Sonam D. Sherpa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF QUASI-ATOMIC LAYER ETCHING OF SILICON NITRIDE
- Publication number 20180261462
- Publication date Sep 13, 2018
- TOKYO ELECTRON LIMITED
- Sonam D. Sherpa
- C01 - INORGANIC CHEMISTRY
Information Patent Application
METHOD OF PREFERENTIAL SILICON NITRIDE ETCHING USING SULFUR HEXAFLU...
- Publication number 20180204733
- Publication date Jul 19, 2018
- TOKYO ELECTRON LIMITED
- Sonam D. Sherpa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF ANISOTROPIC EXTRACTION OF SILICON NITRIDE MANDREL FOR FAB...
- Publication number 20180122637
- Publication date May 3, 2018
- TOKYO ELECTRON LIMITED
- Sonam D. Sherpa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF QUASI-ATOMIC LAYER ETCHING OF SILICON NITRIDE
- Publication number 20180061653
- Publication date Mar 1, 2018
- TOKYO ELECTRON LIMITED
- Sonam D. Sherpa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF SIDEWALL IMAGE TRANSFER
- Publication number 20170345671
- Publication date Nov 30, 2017
- TOKYO ELECTRON LIMITED
- Alok Ranjan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF SELECTIVE SILICON OXIDE ETCHING
- Publication number 20170345673
- Publication date Nov 30, 2017
- TOKYO ELECTRON LIMITED
- Alok Ranjan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF SELECTIVE SILICON NITRIDE ETCHING
- Publication number 20170345674
- Publication date Nov 30, 2017
- TOKYO ELECTRON LIMITED
- Alok Ranjan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF SILICON EXTRACTION USING A HYDROGEN PLASMA
- Publication number 20170345667
- Publication date Nov 30, 2017
- TOKYO ELECTRON LIMITED
- Sonam D. Sherpa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR ATOMIC LAYER ETCHING
- Publication number 20160293432
- Publication date Oct 6, 2016
- TOKYO ELECTRON LIMITED
- Alok Ranjan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR ESC CHARGE CONTROL FOR WAFER CLAMPING
- Publication number 20160027620
- Publication date Jan 28, 2016
- TOKYO ELECTRON LIMITED
- Jason MARION
- H01 - BASIC ELECTRIC ELEMENTS

Sonam SHERPA

Person

Patents Grantslast 30 patents

Method of atomic layer etching of oxide

Method for area-selective etching of silicon nitride layers for the...

Method of isotropic etching of silicon oxide utilizing fluorocarbon...

Method of etching silicon nitride layers for the manufacture of mic...

Method of atomic layer etching of oxide

Method of conformal etching selective to other materials

Selective oxide etching method for self-aligned multiple patterning

Selective nitride etching method for self-aligned multiple patterning

Method of quasi-atomic layer etching of silicon nitride

Method of preferential silicon nitride etching using sulfur hexaflu...

Method of anisotropic extraction of silicon nitride mandrel for fab...

Method of quasi-atomic layer etching of silicon nitride

Method of selective silicon nitride etching

Method of sidewall image transfer

Method of quasi-atomic layer etching of silicon nitride

Method of quasi-atomic layer etching of silicon nitride

Method of anisotropic extraction of silicon nitride mandrel for fab...

Method for atomic layer etching

Method and apparatus for ESC charge control for wafer clamping

Patents Applicationslast 30 patents

BOW MITIGATION IN HIGH ASPECT RATIO OXIDE AND NITRIDE ETCHES

SELECTIVE HARDMASK ETCH FOR SEMICONDUCTOR PROCESSING

LINE EDGE ROUGHNESS (LER) IMPROVEMENT OF RESIST PATTERNS

IN-SITU SIDEWALL PASSIVATION TOWARD THE BOTTOM OF HIGH ASPECT RATIO...

METHODS OF ETCHING SILICON-AND-OXYGEN-CONTAINING FEATURES AT LOW TE...

CYCLIC ETCH OF SILICON OXIDE AND SILICON NITRIDE

Method of Atomic Layer Etching of Oxide

Method of Isotropic Etching of Silicon Oxide Utilizing Fluorocarbon...

METHOD FOR AREA-SELECTIVE ETCHING OF SILICON NITRIDE LAYERS FOR THE...

Method of Atomic Layer Etching of Oxide

METHOD OF ETCHING SILICON NITRIDE LAYERS FOR THE MANUFACTURE OF MIC...

METHOD OF QUASI-ATOMIC LAYER ETCHING OF SILICON NITRIDE

Method of Conformal Etching Selective To Other Materials

SELECTIVE NITRIDE ETCHING METHOD FOR SELF-ALIGNED MULTIPLE PATTERNING

SELECTIVE OXIDE ETCHING METHOD FOR SELF-ALIGNED MULTIPLE PATTERNING

METHOD OF ANISOTROPIC EXTRACTION OF SILICON NITRIDE MANDREL FOR FAB...

METHOD OF QUASI-ATOMIC LAYER ETCHING OF SILICON NITRIDE

METHOD OF QUASI-ATOMIC LAYER ETCHING OF SILICON NITRIDE

METHOD OF PREFERENTIAL SILICON NITRIDE ETCHING USING SULFUR HEXAFLU...

METHOD OF ANISOTROPIC EXTRACTION OF SILICON NITRIDE MANDREL FOR FAB...

METHOD OF QUASI-ATOMIC LAYER ETCHING OF SILICON NITRIDE

METHOD OF SIDEWALL IMAGE TRANSFER

METHOD OF SELECTIVE SILICON OXIDE ETCHING

METHOD OF SELECTIVE SILICON NITRIDE ETCHING

METHOD OF SILICON EXTRACTION USING A HYDROGEN PLASMA

METHOD FOR ATOMIC LAYER ETCHING

METHOD AND APPARATUS FOR ESC CHARGE CONTROL FOR WAFER CLAMPING