Song-Fu Liao

Person

Hsinchu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Double gate metal-ferroelectric-metal-insulator-semiconductor field...
- Patent number 12,150,309
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of selective film deposition and semiconductor feature made...
- Patent number 12,094,935
- Issue date Sep 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Song-Fu Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Annealed seed layer to improve ferroelectric properties of memory l...
- Patent number 11,917,831
- Issue date Feb 27, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Song-Fu Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double gate ferroelectric field effect transistor devices and metho...
- Patent number 11,908,936
- Issue date Feb 20, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric field effect transistor devices and methods for formi...
- Patent number 11,817,498
- Issue date Nov 14, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
In-situ thermal annealing of electrode to form seed layer for impro...
- Patent number 11,810,956
- Issue date Nov 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Annealed seed layer to improve ferroelectric properties of memory l...
- Patent number 11,690,228
- Issue date Jun 27, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Song-Fu Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of selective film deposition and semiconductor feature made...
- Patent number 11,652,148
- Issue date May 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Song-Fu Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric field effect transistor devices and methods for formi...
- Patent number 11,527,649
- Issue date Dec 13, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF SELECTIVE FILM DEPOSITION AND SEMICONDUCTOR FEATURE MADE...
- Publication number 20240371947
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Song-Fu LIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE GATE METAL-FERROELECTRIC-METAL-INSULATOR-SEMICONDUCTOR FIELD...
- Publication number 20240373642
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANNEALED SEED LAYER TO IMPROVE FERROELECTRIC PROPERTIES OF MEMORY L...
- Publication number 20240164111
- Publication date May 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Song-Fu Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING TRANSISTOR STRUCTURE
- Publication number 20240064993
- Publication date Feb 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Song-Fu Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D LATERAL PATTERNING VIA SELECTIVE DEPOSITION FOR FERROELECTRIC DE...
- Publication number 20240032300
- Publication date Jan 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Song-Fu Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE GATE FERROELECTRIC FIELD EFFECT TRANSISTOR DEVICES AND METHO...
- Publication number 20230411522
- Publication date Dec 21, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Yen-Chieh HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC MEMORY DEVICES HAVING IMPROVED FERROELECTRIC PROPERTI...
- Publication number 20230378354
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Po-Ting LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IN-SITU THERMAL ANNEALING OF ELECTRODE TO FORM SEED LAYER FOR IMPRO...
- Publication number 20230369420
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-CHANNEL FERROELECTRIC MEMORY STRUCTURE
- Publication number 20230262989
- Publication date Aug 17, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF SELECTIVE FILM DEPOSITION AND SEMICONDUCTOR FEATURE MADE...
- Publication number 20230253463
- Publication date Aug 10, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Song-Fu LIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE GATE METAL-FERROELECTRIC-METAL-INSULATOR-SEMICONDUCTOR FIELD...
- Publication number 20230247841
- Publication date Aug 3, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC FIELD EFFECT TRANSISTOR DEVICES AND METHODS FOR FORMI...
- Publication number 20230170418
- Publication date Jun 1, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Yen-Chieh HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IN-SITU THERMAL ANNEALING OF ELECTRODE TO FORM SEED LAYER FOR IMPRO...
- Publication number 20230143625
- Publication date May 11, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANNEALED SEED LAYER TO IMPROVE FERROELECTRIC PROPERTIES OF MEMORY L...
- Publication number 20220384460
- Publication date Dec 1, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Song-Fu Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF SELECTIVE FILM DEPOSITION AND SEMICONDUCTOR FEATURE MADE...
- Publication number 20220367648
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Song-Fu LIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC MEMORY DEVICES HAVING IMPROVED FERROELECTRIC PROPERTI...
- Publication number 20220352379
- Publication date Nov 3, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Po-Ting LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE GATE FERROELECTRIC FIELD EFFECT TRANSISTOR DEVICES AND METHO...
- Publication number 20220344513
- Publication date Oct 27, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Yen-Chieh HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANNEALED SEED LAYER TO IMPROVE FERROELECTRIC PROPERTIES OF MEMORY L...
- Publication number 20220271047
- Publication date Aug 25, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Song-Fu Liao
- H01 - BASIC ELECTRIC ELEMENTS

Song-Fu Liao

Person

Patents Grantslast 30 patents

Double gate metal-ferroelectric-metal-insulator-semiconductor field...

Method of selective film deposition and semiconductor feature made...

Annealed seed layer to improve ferroelectric properties of memory l...

Double gate ferroelectric field effect transistor devices and metho...

Ferroelectric field effect transistor devices and methods for formi...

In-situ thermal annealing of electrode to form seed layer for impro...

Annealed seed layer to improve ferroelectric properties of memory l...

Method of selective film deposition and semiconductor feature made...

Ferroelectric field effect transistor devices and methods for formi...

Patents Applicationslast 30 patents

METHOD OF SELECTIVE FILM DEPOSITION AND SEMICONDUCTOR FEATURE MADE...

DOUBLE GATE METAL-FERROELECTRIC-METAL-INSULATOR-SEMICONDUCTOR FIELD...

ANNEALED SEED LAYER TO IMPROVE FERROELECTRIC PROPERTIES OF MEMORY L...

METHOD OF FABRICATING TRANSISTOR STRUCTURE

3D LATERAL PATTERNING VIA SELECTIVE DEPOSITION FOR FERROELECTRIC DE...

DOUBLE GATE FERROELECTRIC FIELD EFFECT TRANSISTOR DEVICES AND METHO...

FERROELECTRIC MEMORY DEVICES HAVING IMPROVED FERROELECTRIC PROPERTI...

IN-SITU THERMAL ANNEALING OF ELECTRODE TO FORM SEED LAYER FOR IMPRO...

MULTI-CHANNEL FERROELECTRIC MEMORY STRUCTURE

METHOD OF SELECTIVE FILM DEPOSITION AND SEMICONDUCTOR FEATURE MADE...

DOUBLE GATE METAL-FERROELECTRIC-METAL-INSULATOR-SEMICONDUCTOR FIELD...

FERROELECTRIC FIELD EFFECT TRANSISTOR DEVICES AND METHODS FOR FORMI...

IN-SITU THERMAL ANNEALING OF ELECTRODE TO FORM SEED LAYER FOR IMPRO...

ANNEALED SEED LAYER TO IMPROVE FERROELECTRIC PROPERTIES OF MEMORY L...

METHOD OF SELECTIVE FILM DEPOSITION AND SEMICONDUCTOR FEATURE MADE...

FERROELECTRIC MEMORY DEVICES HAVING IMPROVED FERROELECTRIC PROPERTI...

DOUBLE GATE FERROELECTRIC FIELD EFFECT TRANSISTOR DEVICES AND METHO...

ANNEALED SEED LAYER TO IMPROVE FERROELECTRIC PROPERTIES OF MEMORY L...