Sou-Chi Chang

Person

Portland, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Field-effect transistor (FET) with self-aligned ferroelectric capac...
- Patent number 12,166,122
- Issue date Dec 10, 2024
- Intel Corporation
- Shriram Shivaraman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystalline bottom electrode for perovskite capacitors and methods...
- Patent number 12,100,731
- Issue date Sep 24, 2024
- Intel Corporation
- Kaan Oguz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric capacitors and methods of fabrication
- Patent number 12,048,165
- Issue date Jul 23, 2024
- Intel Corporation
- Nazila Haratipour
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric or anti-ferroelectric trench capacitor with spacers f...
- Patent number 12,040,378
- Issue date Jul 16, 2024
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cells with ferroelectric capacitors separate from transistor...
- Patent number 11,980,037
- Issue date May 7, 2024
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MFM capacitor and process for forming such
- Patent number 11,901,400
- Issue date Feb 13, 2024
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MFM capacitor with multilayered oxides and metals and processes for...
- Patent number 11,769,789
- Issue date Sep 26, 2023
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilayer high-k gate dielectric for a high performance logic tran...
- Patent number 11,742,407
- Issue date Aug 29, 2023
- Intel Corporation
- Seung Hoon Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device with (anti)ferroelectric spacer structures
- Patent number 11,640,984
- Issue date May 2, 2023
- Intel Corporation
- Jack Kavalieros
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench capacitor with extended dielectric layer
- Patent number 11,626,475
- Issue date Apr 11, 2023
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Improper ferroelectric active and passive devices
- Patent number 11,581,417
- Issue date Feb 14, 2023
- Intel Corporation
- Sasikanth Manipatruni
- G11 - INFORMATION STORAGE
Information Patent Grant
Ultra-dense ferroelectric memory with self-aligned patterning
- Patent number 11,532,439
- Issue date Dec 20, 2022
- Intel Corporation
- Chia-Ching Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoelectric spin orbit logic transistor with a spin filter
- Patent number 11,398,562
- Issue date Jul 26, 2022
- Intel Corporation
- Chia-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Relaxor ferroelectric capacitors and methods of fabrication
- Patent number 11,316,027
- Issue date Apr 26, 2022
- Intel Corporation
- Sou-Chi Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory devices based on capacitors with built-in electric field
- Patent number 11,171,145
- Issue date Nov 9, 2021
- Intel Corporation
- Sou-Chi Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric or anti-ferroelectric trench capacitor with spacers f...
- Patent number 11,063,131
- Issue date Jul 13, 2021
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory including a perovskite material
- Patent number 10,861,861
- Issue date Dec 8, 2020
- Intel Corporation
- Chia-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FERROELECTRIC CAPACITOR WITH INSULATING THIN FILM
- Publication number 20250006434
- Publication date Jan 2, 2025
- Intel Corporation
- Chia-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THIN HAFNIUM-ZIRCONIUM OXIDE FILMS HAVING LARGE GRAIN SIZE FOR FERR...
- Publication number 20250006433
- Publication date Jan 2, 2025
- Intel Corporation
- Sarah Atanasov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED MEMORY CELL WITH REPLACEMENT METAL GATE VERTICAL ACCES...
- Publication number 20250008740
- Publication date Jan 2, 2025
- Intel Corporation
- Wriddhi Chakraborty
Information Patent Application
FERROELECTRIC CAPACITORS AND METHODS OF FABRICATION
- Publication number 20240373644
- Publication date Nov 7, 2024
- Intel Corporation
- Nazila Haratipour
- G11 - INFORMATION STORAGE
Information Patent Application
FABRICATION OF RECONFIGURABLE ARCHITECTURES USING FERROELECTRICS
- Publication number 20240113123
- Publication date Apr 4, 2024
- Intel Corporation
- Elijah V. Karpov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED PATTERNING OF PLATE LINES IN THREE-DIMENSIONAL FERROEL...
- Publication number 20240114693
- Publication date Apr 4, 2024
- Intel Corporation
- Christopher M. Neumann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE, METHOD AND SYSTEM TO PROVIDE A RANDOM ACCESS MEMORY WITH A...
- Publication number 20240112730
- Publication date Apr 4, 2024
- Intel Corporation
- Sou-Chi Chang
- G11 - INFORMATION STORAGE
Information Patent Application
SELECTIVE FERROELECTRIC DEPLOYMENT FOR SINGLE-TRANSISTOR, MULTIPLE-...
- Publication number 20240112714
- Publication date Apr 4, 2024
- Intel Corporation
- Nazila Haratipour
- G11 - INFORMATION STORAGE
Information Patent Application
HIGH ENDURANCE SUPER-LATTICE ANTI-FERROELECTRIC CAPACITORS
- Publication number 20240114695
- Publication date Apr 4, 2024
- Intel Corporation
- Sou-Chi Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAIN CELL USING PLANAR AND TRENCH FERROELECTRIC AND ANTI-FERROELECT...
- Publication number 20240114697
- Publication date Apr 4, 2024
- Intel Corporation
- Shriram SHIVARAMAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY ARRAY COMPRISING A FERROELECTRIC DATA STORAGE ELEMENT
- Publication number 20240112731
- Publication date Apr 4, 2024
- Intel Corporation
- Sou-Chi Chang
- G11 - INFORMATION STORAGE
Information Patent Application
CAPACITOR STRUCTURE EMBEDDED WITHIN SOURCE OR DRAIN REGION
- Publication number 20240113101
- Publication date Apr 4, 2024
- Intel Corporation
- Sourav Dutta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMPROVED REPLACEMENT ELECTRODE PROCESS FOR 3D FERROELECTRIC MEMORY
- Publication number 20240114696
- Publication date Apr 4, 2024
- Intel Corporation
- Christopher Neumann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC CAPACITOR WITHIN BACKSIDE INTERCONNECT
- Publication number 20240114694
- Publication date Apr 4, 2024
- Intel Corporation
- Sourav Dutta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACK-END-OF-LINE 2D MEMORY CELL
- Publication number 20240008290
- Publication date Jan 4, 2024
- Intel Corporation
- Chia-Ching LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL INSULATOR METAL (MIM) CAPACITOR ARCHITECTURES
- Publication number 20230411278
- Publication date Dec 21, 2023
- Intel Corporation
- Chia-Ching LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL INSULATOR METAL (MIM) CAPACITOR ARCHITECTURES
- Publication number 20230411443
- Publication date Dec 21, 2023
- Intel Corporation
- Kaan OGUZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR DEVICES WITH STRONTIUM TITANATE INSULATOR LAYERS
- Publication number 20230253444
- Publication date Aug 10, 2023
- Intel Corporation
- Arnab Sen Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC OXIDE- AND FERROELECTRIC MONOCHALCOGENIDE-BASED CAPAC...
- Publication number 20230200079
- Publication date Jun 22, 2023
- Intel Corporation
- Chia-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL INSULATOR METAL (MIM) CAPACITORS WITH PYROCHLORE-BASED INSULA...
- Publication number 20230197643
- Publication date Jun 22, 2023
- Intel Corporation
- Elijah Karpov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICES WITH NITRIDE-BASED FERROELECTRIC MATERIALS
- Publication number 20230116719
- Publication date Apr 13, 2023
- Intel Corporation
- Elijah V. KARPOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS WITH HIGH DIELECTRIC CONSTANT INTERFACIAL LAYERING
- Publication number 20230097184
- Publication date Mar 30, 2023
- Intel Corporation
- Sarah ATANASOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR WITH AN ELECTRICALLY CONDUCTIVE LAYER COUPLED WITH A META...
- Publication number 20230098594
- Publication date Mar 30, 2023
- Intel Corporation
- Chia-Ching LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTILAYER CAPACITOR WITH EDGE INSULATOR
- Publication number 20230102177
- Publication date Mar 30, 2023
- Intel Corporation
- Chia-Ching LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL FERROELECTRIC RANDOM ACCESS MEMORY (3D FRAM) WITH...
- Publication number 20230101111
- Publication date Mar 30, 2023
- Intel Corporation
- Shriram SHIVARAMAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC THREE-DIMENSIONAL MEMORY
- Publication number 20230097641
- Publication date Mar 30, 2023
- Intel Corporation
- Christopher M. NEUMANN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICES WITH REDUCED READ DISTURBANCE EFFECTS
- Publication number 20230100860
- Publication date Mar 30, 2023
- Intel Corporation
- Sou-Chi CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED CAPACITOR ARCHITECTURE FOR FERROELECTRIC MEMORY DEVICES
- Publication number 20230099724
- Publication date Mar 30, 2023
- Intel Corporation
- Elijah V. KARPOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC RANDOM ACCESS MEMORY (FRAM) DEVICES WITH ENHANCED CAP...
- Publication number 20230097736
- Publication date Mar 30, 2023
- Intel Corporation
- Shriram SHIVARAMAN
- G11 - INFORMATION STORAGE
Information Patent Application
CAPACITOR WITH DUAL DIELECTRIC LAYERS
- Publication number 20230087624
- Publication date Mar 23, 2023
- Intel Corporation
- Kaan OGUZ
- H01 - BASIC ELECTRIC ELEMENTS

Sou-Chi Chang

Person

Patents Grantslast 30 patents

Field-effect transistor (FET) with self-aligned ferroelectric capac...

Crystalline bottom electrode for perovskite capacitors and methods...

Ferroelectric capacitors and methods of fabrication

Ferroelectric or anti-ferroelectric trench capacitor with spacers f...

Memory cells with ferroelectric capacitors separate from transistor...

MFM capacitor and process for forming such

MFM capacitor with multilayered oxides and metals and processes for...

Multilayer high-k gate dielectric for a high performance logic tran...

Transistor device with (anti)ferroelectric spacer structures

Trench capacitor with extended dielectric layer

Improper ferroelectric active and passive devices

Ultra-dense ferroelectric memory with self-aligned patterning

Magnetoelectric spin orbit logic transistor with a spin filter

Relaxor ferroelectric capacitors and methods of fabrication

Memory devices based on capacitors with built-in electric field

Ferroelectric or anti-ferroelectric trench capacitor with spacers f...

Memory including a perovskite material

Patents Applicationslast 30 patents

FERROELECTRIC CAPACITOR WITH INSULATING THIN FILM

THIN HAFNIUM-ZIRCONIUM OXIDE FILMS HAVING LARGE GRAIN SIZE FOR FERR...

SELF-ALIGNED MEMORY CELL WITH REPLACEMENT METAL GATE VERTICAL ACCES...

FERROELECTRIC CAPACITORS AND METHODS OF FABRICATION

FABRICATION OF RECONFIGURABLE ARCHITECTURES USING FERROELECTRICS

SELF-ALIGNED PATTERNING OF PLATE LINES IN THREE-DIMENSIONAL FERROEL...

DEVICE, METHOD AND SYSTEM TO PROVIDE A RANDOM ACCESS MEMORY WITH A...

SELECTIVE FERROELECTRIC DEPLOYMENT FOR SINGLE-TRANSISTOR, MULTIPLE-...

HIGH ENDURANCE SUPER-LATTICE ANTI-FERROELECTRIC CAPACITORS

GAIN CELL USING PLANAR AND TRENCH FERROELECTRIC AND ANTI-FERROELECT...

MEMORY ARRAY COMPRISING A FERROELECTRIC DATA STORAGE ELEMENT

CAPACITOR STRUCTURE EMBEDDED WITHIN SOURCE OR DRAIN REGION

IMPROVED REPLACEMENT ELECTRODE PROCESS FOR 3D FERROELECTRIC MEMORY

FERROELECTRIC CAPACITOR WITHIN BACKSIDE INTERCONNECT

BACK-END-OF-LINE 2D MEMORY CELL

METAL INSULATOR METAL (MIM) CAPACITOR ARCHITECTURES

METAL INSULATOR METAL (MIM) CAPACITOR ARCHITECTURES

CAPACITOR DEVICES WITH STRONTIUM TITANATE INSULATOR LAYERS

FERROELECTRIC OXIDE- AND FERROELECTRIC MONOCHALCOGENIDE-BASED CAPAC...

METAL INSULATOR METAL (MIM) CAPACITORS WITH PYROCHLORE-BASED INSULA...

MEMORY DEVICES WITH NITRIDE-BASED FERROELECTRIC MATERIALS

INTEGRATED CIRCUITS WITH HIGH DIELECTRIC CONSTANT INTERFACIAL LAYERING

CAPACITOR WITH AN ELECTRICALLY CONDUCTIVE LAYER COUPLED WITH A META...

MULTILAYER CAPACITOR WITH EDGE INSULATOR

THREE-DIMENSIONAL FERROELECTRIC RANDOM ACCESS MEMORY (3D FRAM) WITH...

FERROELECTRIC THREE-DIMENSIONAL MEMORY

MEMORY DEVICES WITH REDUCED READ DISTURBANCE EFFECTS

ENHANCED CAPACITOR ARCHITECTURE FOR FERROELECTRIC MEMORY DEVICES

FERROELECTRIC RANDOM ACCESS MEMORY (FRAM) DEVICES WITH ENHANCED CAP...

CAPACITOR WITH DUAL DIELECTRIC LAYERS