Souichi Nadahara

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Poughkeepsie, NY, US

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor substrate and method of processing the same
- Patent number 5,885,905
- Issue date Mar 23, 1999
- Kabushiki Kaisha Toshiba
- Souichi Nadahara
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for heat treating a semiconductor substrate to reduce defects
- Patent number 5,502,010
- Issue date Mar 26, 1996
- Kabushiki Kaisha Toshiba
- Souichi Nadahara
- C30 - CRYSTAL GROWTH