Souichi YOSHIDA

Person

Matsumoto-city, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and method of manufacturing semiconductor device
- Patent number 11,869,961
- Issue date Jan 9, 2024
- Fuji Electric Co., Ltd.
- Hiroshi Miyata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having IGBT and diode with field stop layer fo...
- Patent number 11,508,581
- Issue date Nov 22, 2022
- Fuji Electric Co., Ltd.
- Kouji Mukai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing semiconductor device
- Patent number 11,264,490
- Issue date Mar 1, 2022
- Fuji Electric Co., Ltd.
- Hiroshi Miyata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having IGBT and diode with field stop layer fo...
- Patent number 10,840,099
- Issue date Nov 17, 2020
- Fuji Electric Co., Ltd.
- Kouji Mukai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with an insulated-gate bipolar transistor regi...
- Patent number 10,658,360
- Issue date May 19, 2020
- Fuji Electric Co., Ltd.
- Souichi Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing semiconductor device
- Patent number 10,629,678
- Issue date Apr 21, 2020
- Fuji Electric Co., Ltd.
- Souichi Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing semiconductor device
- Patent number 10,580,853
- Issue date Mar 3, 2020
- Fuji Electric Co., Ltd.
- Souichi Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having IGBT and diode with field stop layer fo...
- Patent number 10,381,225
- Issue date Aug 13, 2019
- Fuji Electric Co., Ltd.
- Kouji Mukai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 10,128,345
- Issue date Nov 13, 2018
- Fuji Electric Co., Ltd.
- Ryoichi Kato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing semiconductor device
- Patent number 9,911,733
- Issue date Mar 6, 2018
- Fuji Electric Co., Ltd.
- Souichi Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 9,614,106
- Issue date Apr 4, 2017
- Fuji Electric Co., Ltd.
- Souichi Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 9,536,875
- Issue date Jan 3, 2017
- Fuji Electric Co., Ltd.
- Masaki Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and semiconductor device manufacturing method
- Patent number 9,023,692
- Issue date May 5, 2015
- Fuji Electric Co., Ltd.
- Souichi Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reverse-conducting insulated gate bipolar transistor
- Patent number 8,502,345
- Issue date Aug 6, 2013
- Fuji Electric Co., Ltd.
- Michio Nemoto
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20220140121
- Publication date May 5, 2022
- Fuji Electric Co., Ltd.
- Hiroshi Miyata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING IGBT AND DIODE WITH FIELD STOP LAYER FO...
- Publication number 20210028019
- Publication date Jan 28, 2021
- Fuji Electric Co., Ltd.
- Kouji MUKAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING IGBT AND DIODE WITH FIELD STOP LAYER FO...
- Publication number 20190362975
- Publication date Nov 28, 2019
- Fuji Electric Co., Ltd.
- Kouji MUKAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20190097030
- Publication date Mar 28, 2019
- Fuji Electric Co., Ltd.
- Hiroshi Miyata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20180166549
- Publication date Jun 14, 2018
- Fuji Electric Co., Ltd.
- Ryoichi KATO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20180047725
- Publication date Feb 15, 2018
- Fuji Electric Co., Ltd.
- Souichi YOSHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20180012762
- Publication date Jan 11, 2018
- Fuji Electric Co., Ltd.
- Kouji MUKAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20170373141
- Publication date Dec 28, 2017
- Fuji Electric Co., Ltd.
- Souichi YOSHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20170047322
- Publication date Feb 16, 2017
- Fuji Electric Co., Ltd.
- Souichi YOSHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20160211257
- Publication date Jul 21, 2016
- Fuji Electric Co., Ltd.
- Souichi YOSHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20160043073
- Publication date Feb 11, 2016
- Fuji Electric Co., Ltd.
- Masaki TAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
- Publication number 20140070270
- Publication date Mar 13, 2014
- Fuji Electric Co., Ltd.
- Souichi YOSHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REVERSE-CONDUCTING INSULATED GATE BIPOLAR TRANSISTOR
- Publication number 20110186965
- Publication date Aug 4, 2011
- FUJI ELECTRIC SYSTEMS CO. LTD.
- Michio NEMOTO
- H01 - BASIC ELECTRIC ELEMENTS

Souichi YOSHIDA

Person

Patents Grantslast 30 patents

Semiconductor device and method of manufacturing semiconductor device

Semiconductor device having IGBT and diode with field stop layer fo...

Semiconductor device and method of manufacturing semiconductor device

Semiconductor device having IGBT and diode with field stop layer fo...

Semiconductor device with an insulated-gate bipolar transistor regi...

Semiconductor device and method of manufacturing semiconductor device

Semiconductor device and method of manufacturing semiconductor device

Semiconductor device having IGBT and diode with field stop layer fo...

Semiconductor device

Semiconductor device and method of manufacturing semiconductor device

Semiconductor device

Semiconductor device

Semiconductor device and semiconductor device manufacturing method

Reverse-conducting insulated gate bipolar transistor

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE HAVING IGBT AND DIODE WITH FIELD STOP LAYER FO...

SEMICONDUCTOR DEVICE HAVING IGBT AND DIODE WITH FIELD STOP LAYER FO...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

REVERSE-CONDUCTING INSULATED GATE BIPOLAR TRANSISTOR