Srijit MUKHERJEE

Person

Hillsboro, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Integrated circuit structures including a titanium silicide material
- Patent number 12,046,654
- Issue date Jul 23, 2024
- Intel Corporation
- Dan S. Lavric
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual metal silicide structures for advanced integrated circuit stru...
- Patent number 11,961,767
- Issue date Apr 16, 2024
- Intel Corporation
- Jeffrey S. Leib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual metal silicide structures for advanced integrated circuit stru...
- Patent number 11,508,626
- Issue date Nov 22, 2022
- Intel Corporation
- Jeffrey S. Leib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits with recessed gate electrodes
- Patent number 11,183,432
- Issue date Nov 23, 2021
- Intel Corporation
- Srijit Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of noble metals in the formation of conductive connectors
- Patent number 11,094,587
- Issue date Aug 17, 2021
- Intel Corporation
- Christopher J. Jezewski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual metal silicide structures for advanced integrated circuit stru...
- Patent number 10,840,151
- Issue date Nov 17, 2020
- Intel Corporation
- Jeffrey S. Leib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual metal silicide structures for advanced integrated circuit stru...
- Patent number 10,796,968
- Issue date Oct 6, 2020
- Intel Corporation
- Jeffrey S. Leib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits with recessed gate electrodes
- Patent number 10,651,093
- Issue date May 12, 2020
- Intel Corporation
- Srijit Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits with recessed gate electrodes
- Patent number 10,020,232
- Issue date Jul 10, 2018
- Intel Corporation
- Srijit Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits with selective gate electrode recess
- Patent number 9,418,898
- Issue date Aug 16, 2016
- Intel Corporation
- Srijit Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits with selective gate electrode recess
- Patent number 8,896,030
- Issue date Nov 25, 2014
- Intel Corporation
- Srijit Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATED CIRCUITS WITH RECESSED GATE ELECTRODES
- Publication number 20240347394
- Publication date Oct 17, 2024
- Intel Corporation
- Srijit MUKHERJEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES INCLUDING A TITANIUM SILICIDE MATERIAL
- Publication number 20240332392
- Publication date Oct 3, 2024
- Intel Corporation
- Dan S. LAVRIC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL METAL SILICIDE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRU...
- Publication number 20240178071
- Publication date May 30, 2024
- Intel Corporation
- Jeffrey S. LEIB
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL METAL SILICIDE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRU...
- Publication number 20230042218
- Publication date Feb 9, 2023
- Intel Corporation
- Jeffrey S. LEIB
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS WITH RECESSED GATE ELECTRODES
- Publication number 20220044971
- Publication date Feb 10, 2022
- Intel Corporation
- Srijit MUKHERJEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES INCLUDING A TITANIUM SILICIDE MATERIAL
- Publication number 20210408258
- Publication date Dec 30, 2021
- Intel Corporation
- Dan S. LAVRIC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL INTERCONNECTS, DEVICES, AND METHODS
- Publication number 20210167019
- Publication date Jun 3, 2021
- Intel Corporation
- Daniel Zierath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL METAL SILICIDE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRU...
- Publication number 20210043520
- Publication date Feb 11, 2021
- Intel Corporation
- Jeffrey S. LEIB
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS WITH RECESSED GATE ELECTRODES
- Publication number 20200235014
- Publication date Jul 23, 2020
- Intel Corporation
- Srijit MUKHERJEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL METAL SILICIDE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRU...
- Publication number 20200013680
- Publication date Jan 9, 2020
- Intel Corporation
- Jeffrey S. LEIB
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL METAL SILICIDE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRU...
- Publication number 20190164846
- Publication date May 30, 2019
- Intel Corporation
- Jeffrey S. LEIB
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS WITH SELECTIVE GATE ELECTRODE RECESS
- Publication number 20190035690
- Publication date Jan 31, 2019
- Intel Corporation
- Srijit MUKHERJEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THE USE OF NOBLE METALS IN THE FORMATION OF CONDUCTIVE CONNECTORS
- Publication number 20180151423
- Publication date May 31, 2018
- Christopher J. Jezewski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS WITH SELETIVE GATE ELECTRODE RECESS
- Publication number 20160372377
- Publication date Dec 22, 2016
- Intel Corporation
- Srijit MUKHERJEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS WITH SELECTIVE GATE ELECTRODE RECESS
- Publication number 20150079776
- Publication date Mar 19, 2015
- Intel Corporation
- Srijit MUKHERJEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS WITH SELECTIVE GATE ELECTRODE RECESS
- Publication number 20140070320
- Publication date Mar 13, 2014
- Srijit Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS

Srijit MUKHERJEE

Person

Patents Grantslast 30 patents

Integrated circuit structures including a titanium silicide material

Dual metal silicide structures for advanced integrated circuit stru...

Dual metal silicide structures for advanced integrated circuit stru...

Integrated circuits with recessed gate electrodes

Use of noble metals in the formation of conductive connectors

Dual metal silicide structures for advanced integrated circuit stru...

Dual metal silicide structures for advanced integrated circuit stru...

Integrated circuits with recessed gate electrodes

Integrated circuits with recessed gate electrodes

Integrated circuits with selective gate electrode recess

Integrated circuits with selective gate electrode recess

Patents Applicationslast 30 patents

INTEGRATED CIRCUITS WITH RECESSED GATE ELECTRODES

INTEGRATED CIRCUIT STRUCTURES INCLUDING A TITANIUM SILICIDE MATERIAL

DUAL METAL SILICIDE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRU...

DUAL METAL SILICIDE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRU...

INTEGRATED CIRCUITS WITH RECESSED GATE ELECTRODES

INTEGRATED CIRCUIT STRUCTURES INCLUDING A TITANIUM SILICIDE MATERIAL

METAL INTERCONNECTS, DEVICES, AND METHODS

DUAL METAL SILICIDE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRU...

INTEGRATED CIRCUITS WITH RECESSED GATE ELECTRODES

DUAL METAL SILICIDE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRU...

DUAL METAL SILICIDE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRU...

INTEGRATED CIRCUITS WITH SELECTIVE GATE ELECTRODE RECESS

THE USE OF NOBLE METALS IN THE FORMATION OF CONDUCTIVE CONNECTORS

INTEGRATED CIRCUITS WITH SELETIVE GATE ELECTRODE RECESS

INTEGRATED CIRCUITS WITH SELECTIVE GATE ELECTRODE RECESS

INTEGRATED CIRCUITS WITH SELECTIVE GATE ELECTRODE RECESS