Stacia Keller

Person

Santa Barbara, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
High mobility group-III nitride transistors with strained channels
- Patent number 12,159,929
- Issue date Dec 3, 2024
- The Regents of the University of California
- Stacia Keller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-N transistor structures with stepped cap layers
- Patent number 11,594,625
- Issue date Feb 28, 2023
- The Regents of the University of California
- Matthew Guidry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to achieve active p-type layer/layers in III-nitrtde epitaxi...
- Patent number 11,588,096
- Issue date Feb 21, 2023
- The Regents of the University of California
- Yuuki Enatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure for increasing mobility in a high electron mobility trans...
- Patent number 11,101,379
- Issue date Aug 24, 2021
- THEREGENIS OF THE UNIVERSITY OF CALIFORNIA
- Brian Romanczyk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trenched vertical power field-effect transistors with improved on-r...
- Patent number 10,312,361
- Issue date Jun 4, 2019
- The Regents of the University of California
- Srabanti Chowdhury
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-Nitride transistor including a III-N depleting layer
- Patent number 10,043,896
- Issue date Aug 7, 2018
- Transphorm Inc.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Carbon doping semiconductor devices
- Patent number 9,865,719
- Issue date Jan 9, 2018
- Transphorm Inc.
- Stacia Keller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride transistor including a p-type depleting layer
- Patent number 9,842,922
- Issue date Dec 12, 2017
- Transphorm Inc.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buffer layer structures suited for III-nitride devices with foreign...
- Patent number 9,685,323
- Issue date Jun 20, 2017
- Transphorm Inc.
- Stacia Keller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride transistor including a p-type depleting layer
- Patent number 9,443,938
- Issue date Sep 13, 2016
- Transphorm Inc.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metalorganic chemical vapor deposition of oxide dielectrics on N-po...
- Patent number 9,281,183
- Issue date Mar 8, 2016
- The Regents of the University of California
- Xiang Liu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Carbon doping semiconductor devices
- Patent number 9,245,992
- Issue date Jan 26, 2016
- Transphorm Inc.
- Stacia Keller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Carbon doping semiconductor devices
- Patent number 9,245,993
- Issue date Jan 26, 2016
- Transphorm Inc.
- Stacia Keller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buffer layer structures suited for III-nitride devices with foreign...
- Patent number 9,165,766
- Issue date Oct 20, 2015
- Transphorm Inc.
- Stacia Keller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
(In,Ga,Al)N optoelectronic devices grown on relaxed (In,Ga,Al)N-on-...
- Patent number 9,076,927
- Issue date Jul 7, 2015
- The Regents of the University of California
- Stacia Keller
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Fabrication of nonpolar indium gallium nitride thin films, heterost...
- Patent number 8,882,935
- Issue date Nov 11, 2014
- The Regents of the University of California
- Arpan Chakraborty
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for heteroepitaxial growth of high channel conductivity and...
- Patent number 8,878,249
- Issue date Nov 4, 2014
- The Regents of the University of California
- Jing Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of nonpolar indium gallium nitride thin films, heterost...
- Patent number 8,502,246
- Issue date Aug 6, 2013
- The Regents of the University of California
- Arpan Chakraborty
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for heteroepitaxial growth of high-quality N-face gallium ni...
- Patent number 8,455,885
- Issue date Jun 4, 2013
- The Regents of the University of California
- Stacia Keller
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for heteroepitaxial growth of high-quality N-face GaN, InN,...
- Patent number 8,193,020
- Issue date Jun 5, 2012
- The Regents of the University of California
- Stacia Keller
- C30 - CRYSTAL GROWTH
Information Patent Grant
Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials...
- Patent number 8,188,458
- Issue date May 29, 2012
- The Regents of the University of California
- Michael D. Craven
- C30 - CRYSTAL GROWTH
Information Patent Grant
Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials...
- Patent number 7,982,208
- Issue date Jul 19, 2011
- The Regents of the University of California
- Michael D. Craven
- C30 - CRYSTAL GROWTH
Information Patent Grant
High light extraction efficiency light emitting diode (LED) with em...
- Patent number 7,977,694
- Issue date Jul 12, 2011
- The Regents of the University of California
- Aurelien J. F. David
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for heteroepitaxial growth of high-quality N-face GaN, InN,...
- Patent number 7,566,580
- Issue date Jul 28, 2009
- The Regents of the University of California
- Stacia Keller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of nonpolar indium gallium nitride thin films, heterost...
- Patent number 7,504,274
- Issue date Mar 17, 2009
- The Regents of the University of California
- Arpan Chakraborty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of nonpolar indium gallium nitride thin films, heterost...
- Patent number 7,186,302
- Issue date Mar 6, 2007
- The Regents of the University of California
- Arpan Chakraborty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials...
- Patent number 7,091,514
- Issue date Aug 15, 2006
- The Regents of the University of California
- Michael D. Craven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group-III nitride based high electron mobility transistor (HEMT) wi...
- Patent number 6,849,882
- Issue date Feb 1, 2005
- Cree Inc.
- Prashant Chavarkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to reduce the dislocation density in group III-nitride films
- Patent number 6,610,144
- Issue date Aug 26, 2003
- The Regents of the University of California
- Umesh Kumar Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High quality, semi-insulating gallium nitride and method and system...
- Patent number 6,261,931
- Issue date Jul 17, 2001
- The Regents of the University of California
- Stacia Keller
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR RELAXING SEMICONDUCTOR FILMS INCLUDING THE FABRICATION O...
- Publication number 20240063340
- Publication date Feb 22, 2024
- The Regents of the University of California
- Stacia Keller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO CONTROL THE RELAXATION OF THICK FILMS ON LATTICE-MISMATCH...
- Publication number 20220399475
- Publication date Dec 15, 2022
- The Regents of the University of California
- Kamruzzaman Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAFER BONDING FOR EMBEDDING ACTIVE REGIONS WITH RELAXED NANOFEATURES
- Publication number 20220102580
- Publication date Mar 31, 2022
- The Regents of the University of California
- Caroline E. Reilly
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-N BASED MATERIAL STRUCTURES, METHODS, DEVICES AND CIRCUIT MODUL...
- Publication number 20210399096
- Publication date Dec 23, 2021
- The Regents of the University of California
- Umesh K. Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL APPROACH TO CONTROLLING LINEARITY IN N-POLAR GAN MISHEMTS
- Publication number 20210399121
- Publication date Dec 23, 2021
- The Regents of the University of California
- Brian Romanczyk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-N TRANSISTOR STRUCTURES WITH STEPPED CAP LAYERS
- Publication number 20200273974
- Publication date Aug 27, 2020
- The Regents of the University of California
- Matthew Guidry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A STRUCTURE FOR INCREASING MOBILITY IN A HIGH ELECTRON MOBILITY TRA...
- Publication number 20190348532
- Publication date Nov 14, 2019
- The Regents of the University of California
- Brian Romanczyk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO ACHIEVE ACTIVE P-TYPE LAYER/LAYERS IN III-NITRIDE EPITAXI...
- Publication number 20190181329
- Publication date Jun 13, 2019
- The Regents of the University of California
- Yuuki Enatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE TRANSISTOR INCLUDING A III-N DEPLETING LAYER
- Publication number 20180102425
- Publication date Apr 12, 2018
- TRANSPHORM INC.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCHED VERTICAL POWER FIELD-EFFECT TRANSISTORS WITH IMPROVED ON-R...
- Publication number 20170125574
- Publication date May 4, 2017
- The Regents of the University of Calfornia
- Srabanti Chowdhury
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE TRANSISTOR INCLUDING A P-TYPE DEPLETING LAYER
- Publication number 20160343840
- Publication date Nov 24, 2016
- TRANSPHORM INC.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METALORGANIC CHEMICAL VAPOR DEPOSITION OF OXIDE DIELECTRICS ON N-PO...
- Publication number 20160163846
- Publication date Jun 9, 2016
- The Regents of the University of California
- Xiang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CARBON DOPING SEMICONDUCTOR DEVICES
- Publication number 20160133737
- Publication date May 12, 2016
- TRANSPHORM INC.
- Stacia Keller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CARBON DOPING SEMICONDUCTOR DEVICES
- Publication number 20160126342
- Publication date May 5, 2016
- TRANSPHORM INC.
- Stacia Keller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BUFFER LAYER STRUCTURES SUITED FOR III-NITRIDE DEVICES WITH FOREIGN...
- Publication number 20160042946
- Publication date Feb 11, 2016
- TRANSPHORM INC.
- Stacia Keller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METALORGANIC CHEMICAL VAPOR DEPOSITION OF OXIDE DIELECTRICS ON N-PO...
- Publication number 20150200286
- Publication date Jul 16, 2015
- The Regents of the University of California
- Xiang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE TRANSISTOR INCLUDING A P-TYPE DEPLETING LAYER
- Publication number 20150021552
- Publication date Jan 22, 2015
- TRANSPHORM INC.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CARBON DOPING SEMICONDUCTOR DEVICES
- Publication number 20140264370
- Publication date Sep 18, 2014
- TRANSPHORM INC.
- Stacia Keller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CARBON DOPING SEMICONDUCTOR DEVICES
- Publication number 20140264455
- Publication date Sep 18, 2014
- TRANSPHORM INC.
- Stacia Keller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
(IN,GA,AL)N OPTOELECTRONIC DEVICES GROWN ON RELAXED (IN,GA,AL)N-ON-...
- Publication number 20140131730
- Publication date May 15, 2014
- Stacia Keller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR HETEROEPITAXIAL GROWTH OF HIGH CHANNEL CONDUCTIVITY AND...
- Publication number 20130307027
- Publication date Nov 21, 2013
- Jing Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF NONPOLAR INDIUM GALLIUM NITRIDE THIN FILMS, HETEROST...
- Publication number 20130264540
- Publication date Oct 10, 2013
- Japan Science and Technology Agency
- Arpan Chakraborty
- B82 - NANO-TECHNOLOGY
Information Patent Application
BUFFER LAYER STRUCTURES SUITED FOR III-NITRIDE DEVICES WITH FOREIGN...
- Publication number 20130200495
- Publication date Aug 8, 2013
- TRANSPHORM INC.
- Stacia Keller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-POLAR (Al,B,In,Ga)N QUANTUM WELL AND HETEROSTRUCTURE MATERIALS...
- Publication number 20120205623
- Publication date Aug 16, 2012
- The Regents of the University of California
- Michael D. Craven
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR HETEROEPITAXIAL GROWTH OF HIGH-QUALITY N-FACE GaN, InN,...
- Publication number 20120193638
- Publication date Aug 2, 2012
- The Regents of the University of California
- Stacia Keller
- C30 - CRYSTAL GROWTH
Information Patent Application
LAYER STRUCTURES FOR CONTROLLING STRESS OF HETEROEPITAXIALLY GROWN...
- Publication number 20120126239
- Publication date May 24, 2012
- TRANSPHORM INC.
- Stacia Keller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-POLAR (Al,B,In,Ga)N QUANTUM WELL AND HETEROSTRUCTURE MATERIALS...
- Publication number 20110204329
- Publication date Aug 25, 2011
- The Regents of the University of California
- Michael D. Craven
- C30 - CRYSTAL GROWTH
Information Patent Application
TECHNIQUE FOR DEVELOPMENT OF HIGH CURRENT DENSITY HETEROJUNCTION FI...
- Publication number 20110057198
- Publication date Mar 10, 2011
- The Regents of the University of California
- Tetsuya Fujiwara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR HETEROEPITAXIAL GROWTH OF HIGH-QUALITY N-FACE GaN, InN,...
- Publication number 20090246944
- Publication date Oct 1, 2009
- The Regents of the University of California
- Stacia Keller
- C30 - CRYSTAL GROWTH
Information Patent Application
FABRICATION OF NONPOLAR INDIUM GALLIUM NITRIDE THIN FILMS, HETEROST...
- Publication number 20090146162
- Publication date Jun 11, 2009
- The Regents of the University of California
- Arpan Chakraborty
- C30 - CRYSTAL GROWTH

Stacia Keller

Person

Patents Grantslast 30 patents

High mobility group-III nitride transistors with strained channels

III-N transistor structures with stepped cap layers

Method to achieve active p-type layer/layers in III-nitrtde epitaxi...

Structure for increasing mobility in a high electron mobility trans...

Trenched vertical power field-effect transistors with improved on-r...

III-Nitride transistor including a III-N depleting layer

Carbon doping semiconductor devices

III-nitride transistor including a p-type depleting layer

Buffer layer structures suited for III-nitride devices with foreign...

III-nitride transistor including a p-type depleting layer

Metalorganic chemical vapor deposition of oxide dielectrics on N-po...

Carbon doping semiconductor devices

Carbon doping semiconductor devices

Buffer layer structures suited for III-nitride devices with foreign...

(In,Ga,Al)N optoelectronic devices grown on relaxed (In,Ga,Al)N-on-...

Fabrication of nonpolar indium gallium nitride thin films, heterost...

Method for heteroepitaxial growth of high channel conductivity and...

Fabrication of nonpolar indium gallium nitride thin films, heterost...

Method for heteroepitaxial growth of high-quality N-face gallium ni...

Method for heteroepitaxial growth of high-quality N-face GaN, InN,...

Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials...

Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials...

High light extraction efficiency light emitting diode (LED) with em...

Method for heteroepitaxial growth of high-quality N-face GaN, InN,...

Fabrication of nonpolar indium gallium nitride thin films, heterost...

Fabrication of nonpolar indium gallium nitride thin films, heterost...

Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials...

Group-III nitride based high electron mobility transistor (HEMT) wi...

Method to reduce the dislocation density in group III-nitride films

High quality, semi-insulating gallium nitride and method and system...

Patents Applicationslast 30 patents

METHOD FOR RELAXING SEMICONDUCTOR FILMS INCLUDING THE FABRICATION O...

METHOD TO CONTROL THE RELAXATION OF THICK FILMS ON LATTICE-MISMATCH...

WAFER BONDING FOR EMBEDDING ACTIVE REGIONS WITH RELAXED NANOFEATURES

III-N BASED MATERIAL STRUCTURES, METHODS, DEVICES AND CIRCUIT MODUL...

NOVEL APPROACH TO CONTROLLING LINEARITY IN N-POLAR GAN MISHEMTS

III-N TRANSISTOR STRUCTURES WITH STEPPED CAP LAYERS

A STRUCTURE FOR INCREASING MOBILITY IN A HIGH ELECTRON MOBILITY TRA...

METHOD TO ACHIEVE ACTIVE P-TYPE LAYER/LAYERS IN III-NITRIDE EPITAXI...

III-NITRIDE TRANSISTOR INCLUDING A III-N DEPLETING LAYER

TRENCHED VERTICAL POWER FIELD-EFFECT TRANSISTORS WITH IMPROVED ON-R...

III-NITRIDE TRANSISTOR INCLUDING A P-TYPE DEPLETING LAYER

METALORGANIC CHEMICAL VAPOR DEPOSITION OF OXIDE DIELECTRICS ON N-PO...

CARBON DOPING SEMICONDUCTOR DEVICES

CARBON DOPING SEMICONDUCTOR DEVICES

BUFFER LAYER STRUCTURES SUITED FOR III-NITRIDE DEVICES WITH FOREIGN...

METALORGANIC CHEMICAL VAPOR DEPOSITION OF OXIDE DIELECTRICS ON N-PO...

III-NITRIDE TRANSISTOR INCLUDING A P-TYPE DEPLETING LAYER

CARBON DOPING SEMICONDUCTOR DEVICES

CARBON DOPING SEMICONDUCTOR DEVICES

(IN,GA,AL)N OPTOELECTRONIC DEVICES GROWN ON RELAXED (IN,GA,AL)N-ON-...

METHOD FOR HETEROEPITAXIAL GROWTH OF HIGH CHANNEL CONDUCTIVITY AND...

FABRICATION OF NONPOLAR INDIUM GALLIUM NITRIDE THIN FILMS, HETEROST...

BUFFER LAYER STRUCTURES SUITED FOR III-NITRIDE DEVICES WITH FOREIGN...

NON-POLAR (Al,B,In,Ga)N QUANTUM WELL AND HETEROSTRUCTURE MATERIALS...

METHOD FOR HETEROEPITAXIAL GROWTH OF HIGH-QUALITY N-FACE GaN, InN,...

LAYER STRUCTURES FOR CONTROLLING STRESS OF HETEROEPITAXIALLY GROWN...

NON-POLAR (Al,B,In,Ga)N QUANTUM WELL AND HETEROSTRUCTURE MATERIALS...

TECHNIQUE FOR DEVELOPMENT OF HIGH CURRENT DENSITY HETEROJUNCTION FI...

METHOD FOR HETEROEPITAXIAL GROWTH OF HIGH-QUALITY N-FACE GaN, InN,...

FABRICATION OF NONPOLAR INDIUM GALLIUM NITRIDE THIN FILMS, HETEROST...