Stefaan Decoutere

Person

Haasrode, BE

People

Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing a III-N enhancement mode HEMT device
- Patent number 12,002,680
- Issue date Jun 4, 2024
- Imec VZW
- Niels Posthuma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-nitride based vertical power device and system
- Patent number 11,380,789
- Issue date Jul 5, 2022
- Imec VZW
- Steve Stoffels
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D power device and system
- Patent number 11,094,629
- Issue date Aug 17, 2021
- Imec VZW
- Stefaan Decoutere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky diode structure and method of fabrication
- Patent number 9,711,601
- Issue date Jul 18, 2017
- IMEC
- Stefaan Decoutere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low temperature ohmic contacts for III-N power devices
- Patent number 9,634,107
- Issue date Apr 25, 2017
- IMEC
- Brice De Jaeger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a semiconductor device comprising a Schottky d...
- Patent number 9,431,511
- Issue date Aug 30, 2016
- IMEC
- Stefaan Decoutere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement mode III-nitride device and method for manufacturing th...
- Patent number 9,425,281
- Issue date Aug 23, 2016
- IMEC
- Stefaan Decoutere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a semiconductor device comprising a Schottky d...
- Patent number 9,276,082
- Issue date Mar 1, 2016
- IMEC
- Stefaan Decoutere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gringo heterojunction bipolar transistor with a metal extrinsic bas...
- Patent number 9,041,149
- Issue date May 26, 2015
- NXP, B.V.
- Guillaume Boccardi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride transistor with source-connected heat spreading plate
- Patent number 8,916,962
- Issue date Dec 23, 2014
- IMEC
- Sylvia Lenci
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a spacer
- Patent number 6,096,657
- Issue date Aug 1, 2000
- IMEC vzw
- Stephan Beckx
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method of Manufacturing a III-N Enhancement Mode HEMT Device
- Publication number 20220181159
- Publication date Jun 9, 2022
- IMEC vzw
- Niels Posthuma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III-Nitride Based Vertical Power Device and System
- Publication number 20200243678
- Publication date Jul 30, 2020
- IMEC vzw
- Steve Stoffels
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D Power Device and System
- Publication number 20200203274
- Publication date Jun 25, 2020
- IMEC vzw
- Stefaan Decoutere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Circuit Comprising Group III-N Transistors Monolithicall...
- Publication number 20160163695
- Publication date Jun 9, 2016
- IMEC vzw
- Stefaan Decoutere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCEMENT MODE III-NITRIDE DEVICE AND METHOD FOR MANUFACTURING TH...
- Publication number 20150318374
- Publication date Nov 5, 2015
- IMEC
- Stefaan DECOUTERE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Producing a Semiconductor Device Comprising a Schottky D...
- Publication number 20150214327
- Publication date Jul 30, 2015
- IMEC
- Stefaan Decoutere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low Temperature Ohmic Contacts for III-N Power Devices
- Publication number 20140346568
- Publication date Nov 27, 2014
- IMEC
- Brice De Jaeger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Producing a Semiconductor Device Comprising a Schottky D...
- Publication number 20140306235
- Publication date Oct 16, 2014
- IMEC
- Stefaan Decoutere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Transistor with Source-Connected Heat Spreading Plate
- Publication number 20140159118
- Publication date Jun 12, 2014
- IMEC
- Sylvia Lenci
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY DIODE STRUCTURE AND METHOD OF FABRICATION
- Publication number 20140103357
- Publication date Apr 17, 2014
- IMEC
- STEFAAN DECOUTERE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCEMENT MODE III-NITRIDE DEVICE AND METHOD FOR MANUFACTURING TH...
- Publication number 20130153923
- Publication date Jun 20, 2013
- IMEC
- Stefaan DECOUTERE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GRINGO HETEROJUNCTION BIPOLAR TRANSISTOR WITH A METAL EXTRINSIC BAS...
- Publication number 20110198671
- Publication date Aug 18, 2011
- NXP B.V.
- Guillaume Boccardi
- H01 - BASIC ELECTRIC ELEMENTS

Stefaan Decoutere

Person

Patents Grantslast 30 patents

Method of manufacturing a III-N enhancement mode HEMT device

Group III-nitride based vertical power device and system

3D power device and system

Schottky diode structure and method of fabrication

Low temperature ohmic contacts for III-N power devices

Method for producing a semiconductor device comprising a Schottky d...

Enhancement mode III-nitride device and method for manufacturing th...

Method for producing a semiconductor device comprising a Schottky d...

Gringo heterojunction bipolar transistor with a metal extrinsic bas...

III-nitride transistor with source-connected heat spreading plate

Method for forming a spacer

Patents Applicationslast 30 patents

Method of Manufacturing a III-N Enhancement Mode HEMT Device

Group III-Nitride Based Vertical Power Device and System

3D Power Device and System

Integrated Circuit Comprising Group III-N Transistors Monolithicall...

ENHANCEMENT MODE III-NITRIDE DEVICE AND METHOD FOR MANUFACTURING TH...

Method for Producing a Semiconductor Device Comprising a Schottky D...

Low Temperature Ohmic Contacts for III-N Power Devices

Method for Producing a Semiconductor Device Comprising a Schottky D...

III-Nitride Transistor with Source-Connected Heat Spreading Plate

SCHOTTKY DIODE STRUCTURE AND METHOD OF FABRICATION

ENHANCEMENT MODE III-NITRIDE DEVICE AND METHOD FOR MANUFACTURING TH...

GRINGO HETEROJUNCTION BIPOLAR TRANSISTOR WITH A METAL EXTRINSIC BAS...