Stefan Degroote

Person

Scherpenheuvel, BE

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor structure comprising an active semiconductor layer of...
- Patent number 9,991,346
- Issue date Jun 5, 2018
- Epigan NV
- Joff Derluyn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device comprising a III-N layer stack with improved passivation lay...
- Patent number 9,847,412
- Issue date Dec 19, 2017
- Epigan NV
- Joff Derluyn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for growing III-V epitaxial layers
- Patent number 9,748,331
- Issue date Aug 29, 2017
- Epigan NV
- Joff Derluyn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for growing III-V epitaxial layers and semiconductor structure
- Patent number 9,543,424
- Issue date Jan 10, 2017
- Epigan NV
- Joff Derluyn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for growing III-V epitaxial layers
- Patent number 9,230,803
- Issue date Jan 5, 2016
- Epigan NV
- Joff Derluyn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a crystalline germanium layer on a substrate
- Patent number 8,956,453
- Issue date Feb 17, 2015
- IMEC
- Ruben Lieten
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device and method of manufacturing thereof
- Patent number 8,580,626
- Issue date Nov 12, 2013
- IMEC
- Kai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing an integrated semiconductor substrate struc...
- Patent number 8,487,316
- Issue date Jul 16, 2013
- IMEC
- Kai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing thereof
- Patent number 8,373,204
- Issue date Feb 12, 2013
- IMEC
- Kai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Growth of monocrystalline GeN on a substrate
- Patent number 8,017,509
- Issue date Sep 13, 2011
- IMEC
- Ruben Lieten
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for forming a group III nitride material on a silicon substrate
- Patent number 7,989,925
- Issue date Aug 2, 2011
- IMEC
- Kai Cheng
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Deposition of group III-nitrides on Ge
- Patent number 7,964,482
- Issue date Jun 21, 2011
- IMEC
- Ruben Lieten
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for forming a group III nitride material on a silicon substrate
- Patent number 7,666,765
- Issue date Feb 23, 2010
- IMEC
- Kai Cheng
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for depositing a group III-nitride material on a silicon sub...
- Patent number 7,327,036
- Issue date Feb 5, 2008
- Interuniversitair Microelektronica Centrum (IMEC)
- Gustaaf Borghs
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
A WAFER SURFACE CURVATURE DETERMINING SYSTEM
- Publication number 20200393241
- Publication date Dec 17, 2020
- EPIGAN NV
- Roland PUSCHE
- G01 - MEASURING TESTING
Information Patent Application
A METHOD FOR FORMING SILICON CARBIDE ONTO A SILICON SUBSTRATE
- Publication number 20200332438
- Publication date Oct 22, 2020
- EpiGaN NV
- Roland PUSCHE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE COMPRISING AN ACTIVE SEMICONDUCTOR LAYER OF...
- Publication number 20170229549
- Publication date Aug 10, 2017
- EpiGaN NV
- Joff DERLUYN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Growing III-V Epitaxial Layers
- Publication number 20160099309
- Publication date Apr 7, 2016
- EpiGaN NV
- Joff Derluyn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Device Comprising a III-N Layer Stack With Improved Passivation Lay...
- Publication number 20150008444
- Publication date Jan 8, 2015
- EpiGaN NV
- Joff Derluyn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Growing III-V Epitaxial Layers
- Publication number 20140167114
- Publication date Jun 19, 2014
- EpiGaN NV
- Joff Derluyn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Growing III-V Epitaxial Layers and Semiconductor Structure
- Publication number 20140159119
- Publication date Jun 12, 2014
- EpiGaN NV
- Joff Derluyn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF
- Publication number 20130203221
- Publication date Aug 8, 2013
- IIMEC
- Kai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING AN INTEGRATED SEMICONDUCTOR SUBSTRATE STRUC...
- Publication number 20110108850
- Publication date May 12, 2011
- IMEC
- Kai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF
- Publication number 20110101370
- Publication date May 5, 2011
- IMEC
- Kai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROWTH OF MONOCRYSTALLINE GeN ON A SUBSTRATE
- Publication number 20110089520
- Publication date Apr 21, 2011
- Ruben Lieten
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Manufacturing a Mono-Crystalline Layer on a Substrate
- Publication number 20110005455
- Publication date Jan 13, 2011
- IMEC
- Ruben Lieten
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING A CRYSTALLINE GERMANIUM LAYER ON A SUBSTRATE
- Publication number 20100173127
- Publication date Jul 8, 2010
- IMEC
- Ruben Lieten
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR FORMING A GROUP III NITRIDE MATERIAL ON A SILICON SUBSTRATE
- Publication number 20090294777
- Publication date Dec 3, 2009
- IMEC
- Kai Cheng
- C30 - CRYSTAL GROWTH
Information Patent Application
DEPOSITION OF GROUP III-NITRIDES ON Ge
- Publication number 20090189192
- Publication date Jul 30, 2009
- Ruben Lieten
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR FORMING A GROUP III NITRIDE MATERIAL ON A SILICON SUBSTRATE
- Publication number 20070238315
- Publication date Oct 11, 2007
- Interuniversitair Microelektronica Centrum (IMEC)
- Kai Cheng
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for depositing a group III-nitride material on a silicon sub...
- Publication number 20050199883
- Publication date Sep 15, 2005
- Gustaaf Borghs
- H01 - BASIC ELECTRIC ELEMENTS

Stefan Degroote

Person

Patents Grantslast 30 patents

Semiconductor structure comprising an active semiconductor layer of...

Device comprising a III-N layer stack with improved passivation lay...

Method for growing III-V epitaxial layers

Method for growing III-V epitaxial layers and semiconductor structure

Method for growing III-V epitaxial layers

Method for producing a crystalline germanium layer on a substrate

Semiconductor device and method of manufacturing thereof

Method of manufacturing an integrated semiconductor substrate struc...

Semiconductor device and method of manufacturing thereof

Growth of monocrystalline GeN on a substrate

Method for forming a group III nitride material on a silicon substrate

Deposition of group III-nitrides on Ge

Method for forming a group III nitride material on a silicon substrate

Method for depositing a group III-nitride material on a silicon sub...

Patents Applicationslast 30 patents

A WAFER SURFACE CURVATURE DETERMINING SYSTEM

A METHOD FOR FORMING SILICON CARBIDE ONTO A SILICON SUBSTRATE

SEMICONDUCTOR STRUCTURE COMPRISING AN ACTIVE SEMICONDUCTOR LAYER OF...

Method for Growing III-V Epitaxial Layers

Device Comprising a III-N Layer Stack With Improved Passivation Lay...

Method for Growing III-V Epitaxial Layers

Method for Growing III-V Epitaxial Layers and Semiconductor Structure

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF

METHOD OF MANUFACTURING AN INTEGRATED SEMICONDUCTOR SUBSTRATE STRUC...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF

GROWTH OF MONOCRYSTALLINE GeN ON A SUBSTRATE

Method for Manufacturing a Mono-Crystalline Layer on a Substrate

METHOD FOR PRODUCING A CRYSTALLINE GERMANIUM LAYER ON A SUBSTRATE

METHOD FOR FORMING A GROUP III NITRIDE MATERIAL ON A SILICON SUBSTRATE

DEPOSITION OF GROUP III-NITRIDES ON Ge

METHOD FOR FORMING A GROUP III NITRIDE MATERIAL ON A SILICON SUBSTRATE

Method for depositing a group III-nitride material on a silicon sub...