Stefan Sedlmaier

Person

Muenchen, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Method for forming a stress-reduced field-effect semiconductor device
- Patent number 9,941,365
- Issue date Apr 10, 2018
- Infineon Technologies Austria AG
- Stefan Sedlmaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress-reduced field-effect semiconductor device and method for for...
- Patent number 9,406,763
- Issue date Aug 2, 2016
- Infineon Technologies Austria AG
- Stefan Sedlmaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component with a drift region and a drift control region
- Patent number 9,190,511
- Issue date Nov 17, 2015
- Infineon Technologies Austria AG
- Frank Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress-reduced field-effect semiconductor device and method for for...
- Patent number 8,907,408
- Issue date Dec 9, 2014
- Infineon Technologies Austria AG
- Stefan Sedlmaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component with high breakthrough tension and low forw...
- Patent number 8,643,086
- Issue date Feb 4, 2014
- Infineon Technologies Austria AG
- Frank Dieter Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component with a drift region and a drift control region
- Patent number 8,461,648
- Issue date Jun 11, 2013
- Infineon Technologies Austria AG
- Frank Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component structure with vertical dielectric layers
- Patent number 8,319,261
- Issue date Nov 27, 2012
- Infineon Technologies Austria AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor component with charge compensation structure an...
- Patent number 8,263,450
- Issue date Sep 11, 2012
- Infineon Technologies AG
- Stefan Sedlmaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component including a drift zone and a drift control...
- Patent number 8,193,584
- Issue date Jun 5, 2012
- Infineon Technologies Austria AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor component with a low on-state resistance
- Patent number 8,110,868
- Issue date Feb 7, 2012
- Infineon Technologies Austria AG
- Frank Dieter Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit including a charge compensation component
- Patent number 7,968,919
- Issue date Jun 28, 2011
- Infineon Technologies Austria AG
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a semiconductor including a foreign material l...
- Patent number 7,947,569
- Issue date May 24, 2011
- Infineon Technologies Austria AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component with a drift zone and a drift control zone
- Patent number 7,943,987
- Issue date May 17, 2011
- Infineon Technologies Austria AG
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component structure with vertical dielectric layers
- Patent number 7,943,449
- Issue date May 17, 2011
- Infineon Technologies Austria AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component comprising a drift zone and a drift control...
- Patent number 7,821,033
- Issue date Oct 26, 2010
- Infineon Technologies Austria AG
- Stefan Sedlmaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Component arrangement including a power semiconductor component hav...
- Patent number 7,709,891
- Issue date May 4, 2010
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor component with charge compensation structure an...
- Patent number 7,554,137
- Issue date Jun 30, 2009
- Infineon Technologies Austria AG
- Stefan Sedlmaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconductor component
- Patent number 7,459,365
- Issue date Dec 2, 2008
- Infineon Technologies Austria AG
- Michael Rüb
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method for Forming a Stress-Reduced Field-Effect Semiconductor Device
- Publication number 20160300914
- Publication date Oct 13, 2016
- Infineon Technologies Austria AG
- Stefan Sedlmaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Stress-Reduced Field-Effect Semiconductor Device and Method for For...
- Publication number 20150137222
- Publication date May 21, 2015
- Stefan Sedlmaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR COMPONENT WITH A DRIFT REGION AND A DRIFT CONTROL REGION
- Publication number 20140001528
- Publication date Jan 2, 2014
- Frank Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Stress-Reduced Field-Effect Semiconductor Device and Method for For...
- Publication number 20130248993
- Publication date Sep 26, 2013
- Infineon Technologies Austria AG
- Stefan Sedlmaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR COMPONENT WITH HIGH BREAKTHROUGH TENSION AND LOW FORW...
- Publication number 20120132956
- Publication date May 31, 2012
- INFINEON TECHNOLOGIES AG
- Frank Dieter Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR COMPONENT STRUCTURE WITH VERTICAL DIELECTRIC LAYERS
- Publication number 20110101451
- Publication date May 5, 2011
- Infineon Technologies Austria AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING A DEVICE INCLUDING A CAPACITIVE STRUCTURE
- Publication number 20100273307
- Publication date Oct 28, 2010
- INFINEON TECHNOLOGIES AG
- Stefan Sedlmaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor component with a drift zone and a drift control zone
- Publication number 20100078710
- Publication date Apr 1, 2010
- Infineon Technologies Austria AG
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR COMPONENT STRUCTURE WITH VERTICAL DIELECTRIC LAYERS
- Publication number 20100078713
- Publication date Apr 1, 2010
- Infineon Technologies Austria AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR COMPONENT INCLUDING A DRIFT ZONE AND A DRIFT CONTROL...
- Publication number 20090321804
- Publication date Dec 31, 2009
- Infineon Technologies Austria AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A SEMICONDUCTOR INCLUDING A MATERIAL LAYER
- Publication number 20090325361
- Publication date Dec 31, 2009
- Infineon Technologies Austria AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR COMPONENT WITH A DRIFT REGION AND A DRIFT CONTROL REGION
- Publication number 20090218621
- Publication date Sep 3, 2009
- Infineon Technologies Austria AG
- Frank Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR COMPONENT WITH CHARGE COMPENSATION STRUCTURE AN...
- Publication number 20090130806
- Publication date May 21, 2009
- Infineon Technologies Austria AG
- Stefan Sedlmaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPONENT ARRANGEMENT INCLUDING A POWER SEMICONDUCTOR COMPONENT HAV...
- Publication number 20080265320
- Publication date Oct 30, 2008
- Infineon Technologies Austria AG
- Anton Mauder
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Semiconductor component comprising a drift zone and a drift control...
- Publication number 20080197380
- Publication date Aug 21, 2008
- Infineon Technologies Austria AG
- Stefan Sedlmaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT INCLUDING A CHARGE COMPENSATION COMPONENT
- Publication number 20080150073
- Publication date Jun 26, 2008
- Infineon Technologies Austria AG
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Component With Charge Compensation Structure An...
- Publication number 20070108512
- Publication date May 17, 2007
- Stefan Sedlmaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating a semiconductor component
- Publication number 20070108513
- Publication date May 17, 2007
- Infineon Technologies Austria AG
- Michael Rub
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor component with a low on-state resistance
- Publication number 20070023830
- Publication date Feb 1, 2007
- Frank Dieter Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS

Stefan Sedlmaier

Person

Patents Grantslast 30 patents

Method for forming a stress-reduced field-effect semiconductor device

Stress-reduced field-effect semiconductor device and method for for...

Semiconductor component with a drift region and a drift control region

Stress-reduced field-effect semiconductor device and method for for...

Semiconductor component with high breakthrough tension and low forw...

Semiconductor component with a drift region and a drift control region

Semiconductor component structure with vertical dielectric layers

Power semiconductor component with charge compensation structure an...

Semiconductor component including a drift zone and a drift control...

Power semiconductor component with a low on-state resistance

Integrated circuit including a charge compensation component

Method for producing a semiconductor including a foreign material l...

Semiconductor component with a drift zone and a drift control zone

Semiconductor component structure with vertical dielectric layers

Semiconductor component comprising a drift zone and a drift control...

Component arrangement including a power semiconductor component hav...

Power semiconductor component with charge compensation structure an...

Method for fabricating a semiconductor component

Patents Applicationslast 30 patents

Method for Forming a Stress-Reduced Field-Effect Semiconductor Device

Stress-Reduced Field-Effect Semiconductor Device and Method for For...

SEMICONDUCTOR COMPONENT WITH A DRIFT REGION AND A DRIFT CONTROL REGION

Stress-Reduced Field-Effect Semiconductor Device and Method for For...

SEMICONDUCTOR COMPONENT WITH HIGH BREAKTHROUGH TENSION AND LOW FORW...

SEMICONDUCTOR COMPONENT STRUCTURE WITH VERTICAL DIELECTRIC LAYERS

METHOD OF MAKING A DEVICE INCLUDING A CAPACITIVE STRUCTURE

Semiconductor component with a drift zone and a drift control zone

SEMICONDUCTOR COMPONENT STRUCTURE WITH VERTICAL DIELECTRIC LAYERS

SEMICONDUCTOR COMPONENT INCLUDING A DRIFT ZONE AND A DRIFT CONTROL...

METHOD FOR PRODUCING A SEMICONDUCTOR INCLUDING A MATERIAL LAYER

SEMICONDUCTOR COMPONENT WITH A DRIFT REGION AND A DRIFT CONTROL REGION

POWER SEMICONDUCTOR COMPONENT WITH CHARGE COMPENSATION STRUCTURE AN...

COMPONENT ARRANGEMENT INCLUDING A POWER SEMICONDUCTOR COMPONENT HAV...

Semiconductor component comprising a drift zone and a drift control...

INTEGRATED CIRCUIT INCLUDING A CHARGE COMPENSATION COMPONENT

Power Semiconductor Component With Charge Compensation Structure An...

Method for fabricating a semiconductor component

Semiconductor component with a low on-state resistance