Stefan Tegen

Person

Dresden, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor die with a power device and method of manufacturing t...
- Patent number 12,107,152
- Issue date Oct 1, 2024
- Infineon Technologies Dresden GmbH & Co. KG
- Stefan Tegen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device having a field plate
- Patent number 12,094,969
- Issue date Sep 17, 2024
- Infineon Technologies Austria AG
- Stefan Tegen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device having a field plate in an elongate active trench
- Patent number 11,824,114
- Issue date Nov 21, 2023
- Infineon Technologies Austria AG
- Stefan Tegen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device and method of forming a field plate in an elongat...
- Patent number 11,545,568
- Issue date Jan 3, 2023
- Infineon Technologies Austria AG
- Stefan Tegen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic circuit with a transistor device, a level shifter and a...
- Patent number 11,342,467
- Issue date May 24, 2022
- Infineon Technologies Dresden GmbH & Co. KG
- Richard Hensch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic circuit with a transistor device and a level shifter
- Patent number 11,183,598
- Issue date Nov 23, 2021
- Infineon Technologies Dresden GmbH & Co. KG
- Richard Hensch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a semiconductor arrangement
- Patent number 10,971,620
- Issue date Apr 6, 2021
- Infineon Technologies Dresden GmbH & Co. KG
- Joachim Weyers
- G01 - MEASURING TESTING
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 10,741,541
- Issue date Aug 11, 2020
- Infineon Technologies Dresden GmbH
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a bipolar junction transistor
- Patent number 10,672,895
- Issue date Jun 2, 2020
- Infineon Technologies Dresden GmbH
- Dirk Manger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming vertical field effect transistor devices having...
- Patent number 10,608,103
- Issue date Mar 31, 2020
- Infineon Technologies Austria AG
- Stefan Tegen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure and a battery structure
- Patent number 10,559,859
- Issue date Feb 11, 2020
- Infineon Technologies AG
- Marko Lemke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having silicide layers
- Patent number 10,490,642
- Issue date Nov 26, 2019
- Infineon Technologies Dresden GmbH & Co. KG
- Rolf Weis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus comprising a plurality of nanowires
- Patent number 10,483,535
- Issue date Nov 19, 2019
- Infineon Technologies AG
- Marko Lemke
- B82 - NANO-TECHNOLOGY
Information Patent Grant
BiMOS device with a fully self-aligned emitter-silicon and method f...
- Patent number 10,312,159
- Issue date Jun 4, 2019
- Infineon Technologies AG
- Frank Hoffmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of manufacturing a semiconductor device with a buried doped...
- Patent number 10,290,735
- Issue date May 14, 2019
- Infineon Technologies Dresden GmbH
- Stefan Tegen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field effect transistor device having alternating drift re...
- Patent number 10,164,086
- Issue date Dec 25, 2018
- Infineon Technologies Austria AG
- Stefan Tegen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a bipolar junction transistor
- Patent number 10,020,387
- Issue date Jul 10, 2018
- Infineon Technologies Dresden GmbH
- Dirk Manger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for processing a carrier
- Patent number 9,984,930
- Issue date May 29, 2018
- Infineon Technologies Dresden GmbH
- Stefan Tegen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor device having silicide layers
- Patent number 9,941,375
- Issue date Apr 10, 2018
- Infineon Technologies Dresden GmbH
- Rolf Weis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with buried doped region and contact structure
- Patent number 9,876,105
- Issue date Jan 23, 2018
- Infineon Technologies Dresden GmbH
- Marko Lemke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic structure, a battery structure, and a method for manufac...
- Patent number 9,847,326
- Issue date Dec 19, 2017
- Infineon Technologies AG
- Stefan Tegen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
BiMOS device with a fully self-aligned emitter-silicon and method f...
- Patent number 9,812,369
- Issue date Nov 7, 2017
- Infineon Technologies AG
- Frank Hoffmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component with field electrode between adjacent semic...
- Patent number 9,653,305
- Issue date May 16, 2017
- Infineon Technologies Dresden GmbH
- Stefan Tegen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power transistor
- Patent number 9,601,487
- Issue date Mar 21, 2017
- Infineon Technologies Dresden GmbH
- Stefan Tegen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for processing a carrier
- Patent number 9,412,601
- Issue date Aug 9, 2016
- Infineon Technologies Dresden GmbH
- Stefan Tegen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device with buried channel/...
- Patent number 9,368,408
- Issue date Jun 14, 2016
- Infineon Technologies Dresden GmbH
- Stefan Tegen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with device separation structures
- Patent number 9,318,550
- Issue date Apr 19, 2016
- Infineon Technologies Dresden GmbH
- Marko Lemke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having buried gate electrode structures
- Patent number 9,276,107
- Issue date Mar 1, 2016
- Infineon Technologies Dresden GmbH
- Marko Lemke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 9,269,711
- Issue date Feb 23, 2016
- Infineon Technologies Austria AG
- Stefan Tegen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a plurality of nanowires
- Patent number 9,251,934
- Issue date Feb 2, 2016
- Infineon Technologies AG
- Marko Lemke
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
TRANSISTOR DEVICE HAVING A FIELD PLATE
- Publication number 20240047573
- Publication date Feb 8, 2024
- Infineon Technologies Austria AG
- Stefan Tegen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER TRANSISTOR DEVICE AND METHOD OF FABRICATING A TRANSISTOR DEVICE
- Publication number 20230352582
- Publication date Nov 2, 2023
- Infineon Technologies Austria AG
- Stefan Tegen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DIE INCLUDING A DEVICE
- Publication number 20230088305
- Publication date Mar 23, 2023
- Infineon Technologies Austria AG
- Adrian Finney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE HAVING A FIELD PLATE IN AN ELONGATE ACTIVE TRENCH
- Publication number 20230071984
- Publication date Mar 9, 2023
- Stefan Tegen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE
- Publication number 20230038354
- Publication date Feb 9, 2023
- Alessandro Ferrara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor Device
- Publication number 20230006059
- Publication date Jan 5, 2023
- Stefan Tegen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DIE WITH A POWER DEVICE AND METHOD OF MANUFACTURING T...
- Publication number 20220285532
- Publication date Sep 8, 2022
- Infineon Technologies Dresden GmbH & Co. KG
- Stefan Tegen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR POWER DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20220262946
- Publication date Aug 18, 2022
- Oliver Blank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC CIRCUIT
- Publication number 20220254934
- Publication date Aug 11, 2022
- Richard Hensch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC CIRCUIT WITH A TRANSISTOR DEVICE, A LEVEL SHIFTER AND A...
- Publication number 20220037536
- Publication date Feb 3, 2022
- Infineon Technologies Dresden GmbH & Co. KG
- Richard Hensch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor Device and Method of Forming a Field Plate in an Elongat...
- Publication number 20210234039
- Publication date Jul 29, 2021
- Infineon Technologies Austria AG
- Stefan Tegen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electronic Circuit with a Transistor Device and a Level Shifter
- Publication number 20200044096
- Publication date Feb 6, 2020
- Richard Hensch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Producing a Semiconductor Arrangement
- Publication number 20190393334
- Publication date Dec 26, 2019
- Infineon Technologies Dresden GmbH & Co. KG
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Forming Semiconductor Devices
- Publication number 20190123190
- Publication date Apr 25, 2019
- Stefan Tegen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A BIPOLAR JUNCTION TRANSISTOR
- Publication number 20180323293
- Publication date Nov 8, 2018
- INFINEON TECHNOLOGIES DRESDEN GMBH
- Dirk MANGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having Silicide Layers
- Publication number 20180212031
- Publication date Jul 26, 2018
- INFINEON TECHNOLOGIES DRESDEN GMBH
- Rolf Weis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BiMOS DEVICE WITH A FULLY SELF-ALIGNED EMITTER-SILICON AND METHOD F...
- Publication number 20180166338
- Publication date Jun 14, 2018
- INFINEON TECHNOLOGIES AG
- Frank HOFFMANN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Manufacturing a Semiconductor Device with a Buried Doped...
- Publication number 20180122935
- Publication date May 3, 2018
- INFINEON TECHNOLOGIES DRESDEN GMBH
- Stefan Tegen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing a Semiconductor Device
- Publication number 20180096985
- Publication date Apr 5, 2018
- INFINEON TECHNOLOGIES DRESDEN GMBH
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A BIPOLAR JUNCTION TRANSISTOR
- Publication number 20170317198
- Publication date Nov 2, 2017
- INFINEON TECHNOLOGIES DRESDEN GMBH
- Dirk MANGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Manufacturing a Semiconductor Device Having Silicide Layers
- Publication number 20170222010
- Publication date Aug 3, 2017
- INFINEON TECHNOLOGIES DRESDEN GMBH
- Rolf Weis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices and a Method for Forming Semiconductor Devices
- Publication number 20170084734
- Publication date Mar 23, 2017
- Infineon Technologies Austria AG
- Stefan Tegen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Contact Structures Extending Through an I...
- Publication number 20170062276
- Publication date Mar 2, 2017
- INFINEON TECHNOLOGIES DRESDEN GMBH
- Stefan Tegen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with a Laterally Varying Doping Profile, and M...
- Publication number 20170040317
- Publication date Feb 9, 2017
- INFINEON TECHNOLOGIES DRESDEN GMBH
- Stefan Tegen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Filling a Trench and Semiconductor Device
- Publication number 20170012110
- Publication date Jan 12, 2017
- INFINEON TECHNOLOGIES DRESDEN GMBH
- Rolf Weis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor Arrangement Including Power Transistors and Voltage Limi...
- Publication number 20160343848
- Publication date Nov 24, 2016
- INFINEON TECHNOLOGIES DRESDEN GMBH
- Martin Bartels
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BiMOS DEVICE WITH A FULLY SELF-ALIGNED EMITTER-SILICON AND METHOD F...
- Publication number 20160322257
- Publication date Nov 3, 2016
- INFINEON TECHNOLOGIES AG
- Frank HOFFMANN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PROCESSING A CARRIER
- Publication number 20160307804
- Publication date Oct 20, 2016
- INFINEON TECHNOLOGIES DRESDEN GMBH
- Stefan Tegen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing a Semiconductor Device Having a Buried Chan...
- Publication number 20160284561
- Publication date Sep 29, 2016
- INFINEON TECHNOLOGIES DRESDEN GMBH
- Stefan Tegen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR COMPONENT WITH FIELD ELECTRODE BETWEEN ADJACENT SEMIC...
- Publication number 20160155809
- Publication date Jun 2, 2016
- INFINEON TECHNOLOGIES DRESDEN GMBH
- Stefan Tegen
- H01 - BASIC ELECTRIC ELEMENTS

Stefan Tegen

Person

Patents Grantslast 30 patents

Semiconductor die with a power device and method of manufacturing t...

Transistor device having a field plate

Transistor device having a field plate in an elongate active trench

Transistor device and method of forming a field plate in an elongat...

Electronic circuit with a transistor device, a level shifter and a...

Electronic circuit with a transistor device and a level shifter

Method for producing a semiconductor arrangement

Method of manufacturing a semiconductor device

Method for manufacturing a bipolar junction transistor

Method for forming vertical field effect transistor devices having...

Integrated circuit structure and a battery structure

Semiconductor device having silicide layers

Apparatus comprising a plurality of nanowires

BiMOS device with a fully self-aligned emitter-silicon and method f...

Methods of manufacturing a semiconductor device with a buried doped...

Vertical field effect transistor device having alternating drift re...

Method for manufacturing a bipolar junction transistor

Method for processing a carrier

Method for manufacturing a semiconductor device having silicide layers

Semiconductor device with buried doped region and contact structure

Electronic structure, a battery structure, and a method for manufac...

BiMOS device with a fully self-aligned emitter-silicon and method f...

Semiconductor component with field electrode between adjacent semic...

Power transistor

Method for processing a carrier

Method of manufacturing a semiconductor device with buried channel/...

Semiconductor device with device separation structures

Semiconductor device having buried gate electrode structures

Semiconductor device

Method for manufacturing a plurality of nanowires

Patents Applicationslast 30 patents

TRANSISTOR DEVICE HAVING A FIELD PLATE

POWER TRANSISTOR DEVICE AND METHOD OF FABRICATING A TRANSISTOR DEVICE

SEMICONDUCTOR DIE INCLUDING A DEVICE

TRANSISTOR DEVICE HAVING A FIELD PLATE IN AN ELONGATE ACTIVE TRENCH

TRANSISTOR DEVICE

Transistor Device

SEMICONDUCTOR DIE WITH A POWER DEVICE AND METHOD OF MANUFACTURING T...

SEMICONDUCTOR POWER DEVICE AND METHOD OF MANUFACTURING THE SAME

ELECTRONIC CIRCUIT

ELECTRONIC CIRCUIT WITH A TRANSISTOR DEVICE, A LEVEL SHIFTER AND A...

Transistor Device and Method of Forming a Field Plate in an Elongat...

Electronic Circuit with a Transistor Device and a Level Shifter

Method for Producing a Semiconductor Arrangement

Method for Forming Semiconductor Devices

METHOD FOR MANUFACTURING A BIPOLAR JUNCTION TRANSISTOR

Semiconductor Device Having Silicide Layers

BiMOS DEVICE WITH A FULLY SELF-ALIGNED EMITTER-SILICON AND METHOD F...

Methods of Manufacturing a Semiconductor Device with a Buried Doped...

Method of Manufacturing a Semiconductor Device

METHOD FOR MANUFACTURING A BIPOLAR JUNCTION TRANSISTOR

Method for Manufacturing a Semiconductor Device Having Silicide Layers

Semiconductor Devices and a Method for Forming Semiconductor Devices

Semiconductor Device with Contact Structures Extending Through an I...

Semiconductor Device with a Laterally Varying Doping Profile, and M...

Method for Filling a Trench and Semiconductor Device

Transistor Arrangement Including Power Transistors and Voltage Limi...

BiMOS DEVICE WITH A FULLY SELF-ALIGNED EMITTER-SILICON AND METHOD F...

METHOD FOR PROCESSING A CARRIER

Method of Manufacturing a Semiconductor Device Having a Buried Chan...

SEMICONDUCTOR COMPONENT WITH FIELD ELECTRODE BETWEEN ADJACENT SEMIC...