Stephan Kruegel

Person

Dresden, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Method for making high-K metal gate electrode structures by separat...
- Patent number 8,735,270
- Issue date May 27, 2014
- GLOBALFOUNDRIES Inc.
- Klaus Hempel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Drain/source extension structure of a field effect transistor with...
- Patent number 8,697,530
- Issue date Apr 15, 2014
- GLOBALFOUNDRIES Inc.
- Ekkehard Pruefer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superior fill conditions in a replacement gate approach by corner r...
- Patent number 8,048,792
- Issue date Nov 1, 2011
- GLOBALFOUNDRIES Inc.
- Sven Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of patterning gate electrodes by reducing sidewall angles of...
- Patent number 7,858,526
- Issue date Dec 28, 2010
- Advanced Micro Devices, Inc.
- Roland Stejskal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench isolation structure for a semiconductor device with reduced...
- Patent number 7,358,150
- Issue date Apr 15, 2008
- Advanced Micro Devices, Inc.
- Klaus Hempel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique for forming a substrate having crystalline semiconductor...
- Patent number 7,332,384
- Issue date Feb 19, 2008
- Advanced Micro Devices, Inc.
- Wolfgang Buchholtz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a trench isolation structure for a semicond...
- Patent number 6,943,088
- Issue date Sep 13, 2005
- Advanced Micro Devices, Inc.
- Ralf van Bentum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming drain/source extension structures of a field eff...
- Patent number 6,849,516
- Issue date Feb 1, 2005
- Advanced Micro Devices, Inc.
- Thomas Feudel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a metal silicide gate in a standard MOS process s...
- Patent number 6,821,887
- Issue date Nov 23, 2004
- Advanced Micro Devices, Inc.
- Karsten Wieczorek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of filling an opening in a material layer with an insulating...
- Patent number 6,812,115
- Issue date Nov 2, 2004
- Advanced Micro Devices, Inc.
- Karsten Wieczorek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with reduced gate delay and method of fabri...
- Patent number 6,798,028
- Issue date Sep 28, 2004
- Advanced Micro Devices, Inc.
- Manfred Horstmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming layers of oxide on a surface of a substrate
- Patent number 6,703,278
- Issue date Mar 9, 2004
- Advanced Micro Devices, Inc.
- Karsten Wieczorek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with an improved gate contact and method of...
- Patent number 6,566,718
- Issue date May 20, 2003
- Advanced Micro Devices, Inc.
- Karsten Wieczorek
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HIGH-K METAL GATE ELECTRODE STRUCTURES FORMED BY SEPARATE REMOVAL O...
- Publication number 20130273729
- Publication date Oct 17, 2013
- Klaus Hempel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-K METAL GATE ELECTRODE STRUCTURES FORMED BY SEPARATE REMOVAL O...
- Publication number 20110101470
- Publication date May 5, 2011
- Klaus Hempel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPERIOR FILL CONDITIONS IN A REPLACEMENT GATE APPROACH BY CORNER R...
- Publication number 20110073963
- Publication date Mar 31, 2011
- Sven Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INCREASING ETCH SELECTIVITY DURING THE PATTERNING OF A CONTACT STRU...
- Publication number 20090108415
- Publication date Apr 30, 2009
- Markus LENSKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRAIN/SOURCE EXTENSION STRUCTURE OF A FIELD EFFECT TRANSISTOR WITH...
- Publication number 20080001191
- Publication date Jan 3, 2008
- Ekkehard Pruefer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PATTERNING GATE ELECTRODES BY REDUCING SIDEWALL ANGLES OF...
- Publication number 20080003825
- Publication date Jan 3, 2008
- Roland Stejskal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH ISOLATION STRUCTURE FOR A SEMICONDUCTOR DEVICE WITH REDUCED...
- Publication number 20070155120
- Publication date Jul 5, 2007
- Klaus Hempel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Technique for forming a substrate having crystalline semiconductor...
- Publication number 20060006389
- Publication date Jan 12, 2006
- Wolfgang Buchholtz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Drain/source extension structure of a field effect transistor inclu...
- Publication number 20050098818
- Publication date May 12, 2005
- Advanced Micro Devices, Inc.
- Thomas Feudel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench isolation structure for a semiconductor device with a differ...
- Publication number 20040119135
- Publication date Jun 24, 2004
- Ralf van Bentum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Drain/source extension structure of a field effect transistor inclu...
- Publication number 20040104442
- Publication date Jun 3, 2004
- Thomas Feudel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming a metal silicide gate in a standard MOS process s...
- Publication number 20040038435
- Publication date Feb 26, 2004
- Karsten Wieczorek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of providing a thick thermal oxide in trench isolation
- Publication number 20040038495
- Publication date Feb 26, 2004
- Karsten Wieczorek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of filling an opening in a material layer with an insulating...
- Publication number 20040018696
- Publication date Jan 29, 2004
- Karsten Wieczorek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field effect transistor with reduced gate delay and method of fabri...
- Publication number 20020056859
- Publication date May 16, 2002
- Manfred Horstmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field effect transistor with an improved gate contact and method of...
- Publication number 20020056879
- Publication date May 16, 2002
- Karsten Wieczorek
- H01 - BASIC ELECTRIC ELEMENTS

Stephan Kruegel

Person

Patents Grantslast 30 patents

Method for making high-K metal gate electrode structures by separat...

Drain/source extension structure of a field effect transistor with...

Superior fill conditions in a replacement gate approach by corner r...

Method of patterning gate electrodes by reducing sidewall angles of...

Trench isolation structure for a semiconductor device with reduced...

Technique for forming a substrate having crystalline semiconductor...

Method of manufacturing a trench isolation structure for a semicond...

Methods of forming drain/source extension structures of a field eff...

Method of forming a metal silicide gate in a standard MOS process s...

Method of filling an opening in a material layer with an insulating...

Field effect transistor with reduced gate delay and method of fabri...

Method of forming layers of oxide on a surface of a substrate

Field effect transistor with an improved gate contact and method of...

Patents Applicationslast 30 patents

HIGH-K METAL GATE ELECTRODE STRUCTURES FORMED BY SEPARATE REMOVAL O...

HIGH-K METAL GATE ELECTRODE STRUCTURES FORMED BY SEPARATE REMOVAL O...

SUPERIOR FILL CONDITIONS IN A REPLACEMENT GATE APPROACH BY CORNER R...

INCREASING ETCH SELECTIVITY DURING THE PATTERNING OF A CONTACT STRU...

DRAIN/SOURCE EXTENSION STRUCTURE OF A FIELD EFFECT TRANSISTOR WITH...

METHOD OF PATTERNING GATE ELECTRODES BY REDUCING SIDEWALL ANGLES OF...

TRENCH ISOLATION STRUCTURE FOR A SEMICONDUCTOR DEVICE WITH REDUCED...

Technique for forming a substrate having crystalline semiconductor...

Drain/source extension structure of a field effect transistor inclu...

Trench isolation structure for a semiconductor device with a differ...

Drain/source extension structure of a field effect transistor inclu...

Method of forming a metal silicide gate in a standard MOS process s...

Method of providing a thick thermal oxide in trench isolation

Method of filling an opening in a material layer with an insulating...

Field effect transistor with reduced gate delay and method of fabri...

Field effect transistor with an improved gate contact and method of...