Stephan Mueller

Person

Troy, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method for producing semi-insulating resistivity in high purity sil...
- Patent number 9,059,118
- Issue date Jun 16, 2015
- Cree, Inc.
- Jason Ronald Jenny
- C30 - CRYSTAL GROWTH
Information Patent Grant
Low 1C screw dislocation 3 inch silicon carbide wafer
- Patent number 8,785,946
- Issue date Jul 22, 2014
- Cree, Inc.
- Adrian Powell
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Low 1C screw dislocation 3 inch silicon carbide wafer
- Patent number 8,624,267
- Issue date Jan 7, 2014
- Cree, Inc.
- Adrian Powell
Information Patent Grant
Low 1C screw dislocation 3 inch silicon carbide wafer
- Patent number 8,384,090
- Issue date Feb 26, 2013
- Cree, Inc.
- Adrian Powell
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Halogen assisted physical vapor transport method for silicon carbid...
- Patent number 8,163,086
- Issue date Apr 24, 2012
- Cree, Inc.
- Stephan G. Mueller
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
One hundred millimeter single crystal silicon carbide wafer
- Patent number 8,147,991
- Issue date Apr 3, 2012
- Cree, Inc.
- Jason Ronald Jenny
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Minimizing degradation of SiC bipolar semiconductor devices
- Patent number 7,880,171
- Issue date Feb 1, 2011
- Cree, Inc.
- Joseph J. Sumakeris
- C30 - CRYSTAL GROWTH
Information Patent Grant
One hundred millimeter high purity semi-insulating single crystal s...
- Patent number 7,601,441
- Issue date Oct 13, 2009
- Cree, Inc.
- Jason Ronald Jenny
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating silicon carbide crystals
- Patent number 7,501,022
- Issue date Mar 10, 2009
- Cree, Inc.
- Stephan Mueller
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Minimizing degradation of SiC bipolar semiconductor devices
- Patent number 7,427,326
- Issue date Sep 23, 2008
- Cree, Inc.
- Joseph J. Sumakeris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Seed and seedholder combinations for high quality growth of large s...
- Patent number 7,364,617
- Issue date Apr 29, 2008
- Cree, Inc.
- Stephan Mueller
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
One hundred millimeter single crystal silicon carbide wafer
- Patent number 7,351,286
- Issue date Apr 1, 2008
- Cree, Inc.
- Robert Tyler Leonard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Seeded single crystal silicon carbide growth and resulting crystals
- Patent number 7,316,747
- Issue date Jan 8, 2008
- Cree, Inc.
- Jason Ronald Jenny
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduction of subsurface damage in the production of bulk SiC crystals
- Patent number 7,300,519
- Issue date Nov 27, 2007
- Cree, Inc.
- Valeri F. Tsvetkov
- C30 - CRYSTAL GROWTH
Information Patent Grant
Seed and seedholder combinations for high quality growth of large s...
- Patent number 7,192,482
- Issue date Mar 20, 2007
- Cree, Inc.
- Stephan Mueller
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Methods of fabricating silicon carbide crystals
- Patent number 7,135,072
- Issue date Nov 14, 2006
- Cree, Inc.
- Stephan Mueller
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Minimizing degradation of SiC bipolar semiconductor devices
- Patent number 6,849,874
- Issue date Feb 1, 2005
- Cree, Inc.
- Joseph J. Sumakeris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing semi-insulating resistivity in high purity sil...
- Patent number 6,814,801
- Issue date Nov 9, 2004
- Cree, Inc.
- Jason Ronald Jenny
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating silicon carbide crystals
- Patent number 6,706,114
- Issue date Mar 16, 2004
- Cree, Inc.
- Stephan Mueller
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
High-resistivity silicon carbide substrate for semiconductor device...
- Patent number 6,507,046
- Issue date Jan 14, 2003
- Cree, Inc.
- Stephan Mueller
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LOW 1C SCREW DISLOCATION 3 INCH SILICON CARBIDE WAFER
- Publication number 20130161651
- Publication date Jun 27, 2013
- Cree, Inc.
- Adrian Powell
- C30 - CRYSTAL GROWTH
Information Patent Application
HALOGEN ASSISTED PHYSICAL VAPOR TRANSPORT METHOD FOR SILICON CARBID...
- Publication number 20120167825
- Publication date Jul 5, 2012
- Stephan G. Mueller
- C30 - CRYSTAL GROWTH
Information Patent Application
ONE HUNDRED MILLIMETER SINGLE CRYSTAL SILICON CARBIDE WAFER
- Publication number 20110024766
- Publication date Feb 3, 2011
- Cree, Inc.
- Jason Ronald Jenny
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Producing Semi-Insulating Resistivity in High Purity Sil...
- Publication number 20090256162
- Publication date Oct 15, 2009
- Cree, Inc.
- Jason Ronald Jenny
- C30 - CRYSTAL GROWTH
Information Patent Application
Halogen Assisted Physical Vapor Transport Method for Silicon Carbid...
- Publication number 20090056619
- Publication date Mar 5, 2009
- Stephan G. Mueller
- C30 - CRYSTAL GROWTH
Information Patent Application
Low 1C Screw Dislocation 3 Inch Silicon Carbide Wafer
- Publication number 20080169476
- Publication date Jul 17, 2008
- Cree, Inc.
- Adrian Powell
- C30 - CRYSTAL GROWTH
Information Patent Application
One hundred millimeter single crystal silicon carbide wafer
- Publication number 20070240633
- Publication date Oct 18, 2007
- Robert Tyler Leonard
- C30 - CRYSTAL GROWTH
Information Patent Application
Seed and Seedholder Combinations for High Quality Growth of Large S...
- Publication number 20070157874
- Publication date Jul 12, 2007
- Stephan Mueller
- C30 - CRYSTAL GROWTH
Information Patent Application
Minimizing Degradation of SiC Bipolar Semiconductor Devices
- Publication number 20070117336
- Publication date May 24, 2007
- Cree, Inc.
- Joseph J. Sumakeris
- C30 - CRYSTAL GROWTH
Information Patent Application
Methods of fabricating silicon carbide crystals
- Publication number 20070022945
- Publication date Feb 1, 2007
- Stephan Mueller
- C30 - CRYSTAL GROWTH
Information Patent Application
Seeded single crystal silicon carbide growth and resulting crystals
- Publication number 20060213430
- Publication date Sep 28, 2006
- Jason Ronald Jenny
- C30 - CRYSTAL GROWTH
Information Patent Application
Reduction of subsurface damage in the production of bulk SiC crystals
- Publication number 20060102068
- Publication date May 18, 2006
- Valeri F. Tsvetkov
- C30 - CRYSTAL GROWTH
Information Patent Application
Seed and seedholder combinations for high quality growth of large s...
- Publication number 20060032434
- Publication date Feb 16, 2006
- Stephan Mueller
- C30 - CRYSTAL GROWTH
Information Patent Application
One hundred millimeter high purity semi-insulating single crystal s...
- Publication number 20050126471
- Publication date Jun 16, 2005
- Jason Ronald Jenny
- C30 - CRYSTAL GROWTH
Information Patent Application
Minimizing degradation of SiC bipolar semiconductor devices
- Publication number 20050116234
- Publication date Jun 2, 2005
- Joseph J. Sumakeris
- C30 - CRYSTAL GROWTH
Information Patent Application
Minimizing degradation of SiC bipolar semiconductor devices
- Publication number 20050118746
- Publication date Jun 2, 2005
- Joseph J. Sumakeris
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for producing semi-insulating resistivity in high purity sil...
- Publication number 20040206298
- Publication date Oct 21, 2004
- Jason Ronald Jenny
- C30 - CRYSTAL GROWTH
Information Patent Application
Methods of fabricating silicon carbide crystals
- Publication number 20040144299
- Publication date Jul 29, 2004
- Stephan Mueller
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for producing semi-insulating resistivity in high purity sil...
- Publication number 20030233975
- Publication date Dec 25, 2003
- Cree, Inc.
- Jason Ronald Jenny
- C30 - CRYSTAL GROWTH
Information Patent Application
Minimizing degradation of SiC bipolar semiconductor devices
- Publication number 20030080842
- Publication date May 1, 2003
- Joseph J. Sumakeris
- C30 - CRYSTAL GROWTH
Information Patent Application
Seed crystal holders and seed crystals for fabricating silicon carb...
- Publication number 20020170491
- Publication date Nov 21, 2002
- Stephan Mueller
- C30 - CRYSTAL GROWTH
Information Patent Application
HIGH-RESISTIVITY SILICON CARBIDE SUBSTRATE FOR SEMICONDUCTOR DEVICE...
- Publication number 20020167010
- Publication date Nov 14, 2002
- Stephan Mueller
- C30 - CRYSTAL GROWTH

Stephan Mueller

Person

Patents Grantslast 30 patents

Method for producing semi-insulating resistivity in high purity sil...

Low 1C screw dislocation 3 inch silicon carbide wafer

Low 1C screw dislocation 3 inch silicon carbide wafer

Low 1C screw dislocation 3 inch silicon carbide wafer

Halogen assisted physical vapor transport method for silicon carbid...

One hundred millimeter single crystal silicon carbide wafer

Minimizing degradation of SiC bipolar semiconductor devices

One hundred millimeter high purity semi-insulating single crystal s...

Methods of fabricating silicon carbide crystals

Minimizing degradation of SiC bipolar semiconductor devices

Seed and seedholder combinations for high quality growth of large s...

One hundred millimeter single crystal silicon carbide wafer

Seeded single crystal silicon carbide growth and resulting crystals

Reduction of subsurface damage in the production of bulk SiC crystals

Seed and seedholder combinations for high quality growth of large s...

Methods of fabricating silicon carbide crystals

Minimizing degradation of SiC bipolar semiconductor devices

Method for producing semi-insulating resistivity in high purity sil...

Methods of fabricating silicon carbide crystals

High-resistivity silicon carbide substrate for semiconductor device...

Patents Applicationslast 30 patents

LOW 1C SCREW DISLOCATION 3 INCH SILICON CARBIDE WAFER

HALOGEN ASSISTED PHYSICAL VAPOR TRANSPORT METHOD FOR SILICON CARBID...

ONE HUNDRED MILLIMETER SINGLE CRYSTAL SILICON CARBIDE WAFER

Method for Producing Semi-Insulating Resistivity in High Purity Sil...

Halogen Assisted Physical Vapor Transport Method for Silicon Carbid...

Low 1C Screw Dislocation 3 Inch Silicon Carbide Wafer

One hundred millimeter single crystal silicon carbide wafer

Seed and Seedholder Combinations for High Quality Growth of Large S...

Minimizing Degradation of SiC Bipolar Semiconductor Devices

Methods of fabricating silicon carbide crystals

Seeded single crystal silicon carbide growth and resulting crystals

Reduction of subsurface damage in the production of bulk SiC crystals

Seed and seedholder combinations for high quality growth of large s...

One hundred millimeter high purity semi-insulating single crystal s...

Minimizing degradation of SiC bipolar semiconductor devices

Minimizing degradation of SiC bipolar semiconductor devices

Method for producing semi-insulating resistivity in high purity sil...

Methods of fabricating silicon carbide crystals

Method for producing semi-insulating resistivity in high purity sil...

Minimizing degradation of SiC bipolar semiconductor devices

Seed crystal holders and seed crystals for fabricating silicon carb...

HIGH-RESISTIVITY SILICON CARBIDE SUBSTRATE FOR SEMICONDUCTOR DEVICE...