Stephan Voss

Person

Munich, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device with improved performance in operation and imp...
- Patent number 12,218,029
- Issue date Feb 4, 2025
- Infineon Technologies Austria AG
- Edward Fuergut
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming a semiconductor device having a second semicond...
- Patent number 12,211,703
- Issue date Jan 28, 2025
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device protection using an anti-reflective layer
- Patent number 12,046,509
- Issue date Jul 23, 2024
- Infineon Technologies AG
- Stephan Voss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming a semiconductor device
- Patent number 11,742,215
- Issue date Aug 29, 2023
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor package with signal distribution element
- Patent number 11,721,616
- Issue date Aug 8, 2023
- Infineon Technologies Austria AG
- Stephan Voss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for processing a semiconductor wafer, semiconductor composit...
- Patent number 11,515,264
- Issue date Nov 29, 2022
- Infineon Technologies AG
- Francisco Javier Santos Rodriguez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device comprising first and...
- Patent number 11,081,544
- Issue date Aug 3, 2021
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising a clamping structure
- Patent number 10,340,264
- Issue date Jul 2, 2019
- Infineon Technologies Austria AG
- Stephan Voss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor with superjunction structure
- Patent number 10,249,746
- Issue date Apr 2, 2019
- Infineon Technologies AG
- Frank Dieter Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including at least one type of deep-level dopant
- Patent number 10,177,230
- Issue date Jan 8, 2019
- Infineon Technologies AG
- Stephan Voss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for forming a semiconductor device
- Patent number 10,153,339
- Issue date Dec 11, 2018
- Infineon Technologies AG
- Stephan Voss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with channelstopper and method for producing t...
- Patent number 10,038,052
- Issue date Jul 31, 2018
- Infineon Technologies AG
- Elmar Falck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising a clamping structure
- Patent number 9,985,017
- Issue date May 29, 2018
- Infineon Technologies Austria AG
- Stephan Voss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power device with overvoltage arrester
- Patent number 9,979,187
- Issue date May 22, 2018
- Infineon Technologies Austria AG
- Thomas Basler
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Bipolar transistor with superjunction structure
- Patent number 9,917,181
- Issue date Mar 13, 2018
- Infineon Technologies AG
- Frank Dieter Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate semiconductor device with soft switching behavior
- Patent number 9,899,377
- Issue date Feb 20, 2018
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 9,865,717
- Issue date Jan 9, 2018
- Infineon Technologies Austria AG
- Stephan Voss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a reduced band gap zone
- Patent number 9,859,272
- Issue date Jan 2, 2018
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate bipolar transistor comprising negative temperature c...
- Patent number 9,825,023
- Issue date Nov 21, 2017
- Infineon Technologies Austria AG
- Thomas Basler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion implantation apparatus with ion beam directing unit
- Patent number 9,809,877
- Issue date Nov 7, 2017
- Infineon Technologies AG
- Alexander Breymesser
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for treating a semiconductor wafer
- Patent number 9,754,787
- Issue date Sep 5, 2017
- Infineon Technologies AG
- Johannes Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a semiconductor device formed by thermal annealing
- Patent number 9,704,712
- Issue date Jul 11, 2017
- Infineon Technologies AG
- Alexander Breymesser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device with integrated gate-resistor
- Patent number 9,548,370
- Issue date Jan 17, 2017
- Infineon Technologies AG
- Stephan Voss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 9,508,812
- Issue date Nov 29, 2016
- Infineon Technologies Austria AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Implantation apparatus with ion beam directing unit, semiconductor...
- Patent number 9,390,883
- Issue date Jul 12, 2016
- Infineon Technologies AG
- Alexander Breymesser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Edge termination structure with trench isolation regions
- Patent number 9,224,806
- Issue date Dec 29, 2015
- Infineon Technologies AG
- Stephan Voss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate bipolar transistor including emitter short regions
- Patent number 9,111,989
- Issue date Aug 18, 2015
- Infineon Technologies Austria AG
- Stephan Voss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including first and second semiconductor mater...
- Patent number 9,082,741
- Issue date Jul 14, 2015
- Infineon Technologies AG
- Stephan Voss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOS transistor with integrated gate-resistor
- Patent number 9,041,120
- Issue date May 26, 2015
- Infineon Technologies AG
- Stephan Voss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with staggered oxide-filled trenches at edge r...
- Patent number 8,866,255
- Issue date Oct 21, 2014
- Infineon Technologies Austria AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Methods for Forming a Semiconductor Device Having a Second Semicond...
- Publication number 20230395394
- Publication date Dec 7, 2023
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Improved Performance in Operation and Imp...
- Publication number 20220384305
- Publication date Dec 1, 2022
- Infineon Technologies Austria AG
- Edward Fuergut
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Processing a Semiconductor Wafer and Semiconductor Compo...
- Publication number 20220359428
- Publication date Nov 10, 2022
- Francisco Javier Santos Rodriguez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE PROTECTION
- Publication number 20220199464
- Publication date Jun 23, 2022
- INFINEON TECHNOLOGIES AG
- Stephan VOSS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for Forming a Semiconductor Device
- Publication number 20220037165
- Publication date Feb 3, 2022
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Package with Signal Distribution Element
- Publication number 20210384111
- Publication date Dec 9, 2021
- Stephan Voss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Processing a Semiconductor Wafer, Semiconductor Composit...
- Publication number 20190363057
- Publication date Nov 28, 2019
- Francisco Javier Santos Rodriguez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing a Semiconductor Device Comprising First and...
- Publication number 20190165090
- Publication date May 30, 2019
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Comprising a Clamping Structure
- Publication number 20180190641
- Publication date Jul 5, 2018
- Infineon Technologies Austria AG
- Stephan Voss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR WITH SUPERJUNCTION STRUCTURE
- Publication number 20180158937
- Publication date Jun 7, 2018
- INFINEON TECHNOLOGIES AG
- Frank Dieter PFIRSCH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method for Forming a Semiconductor Device
- Publication number 20180090565
- Publication date Mar 29, 2018
- INFINEON TECHNOLOGIES AG
- Stephan Voss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING A SEMICONDUCTOR DEVICE FORMED BY THERMAL ANNEALING
- Publication number 20170194148
- Publication date Jul 6, 2017
- INFINEON TECHNOLOGIES AG
- Alexander Breymesser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER DEVICE WITH OVERVOLTAGE ARRESTER
- Publication number 20170141567
- Publication date May 18, 2017
- Infineon Technologies Austria AG
- Thomas Basler
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20170125560
- Publication date May 4, 2017
- Infineon Technologies Austria AG
- Stephan VOSS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE SEMICONDUCTOR DEVICE WITH SOFT SWITCHING BEHAVIOR
- Publication number 20170125407
- Publication date May 4, 2017
- INFINEON TECHNOLOGIES AG
- Hans-Joachim SCHULZE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR WITH SUPERJUNCTION STRUCTURE
- Publication number 20170117394
- Publication date Apr 27, 2017
- INFINEON TECHNOLOGIES AG
- Frank Dieter PFIRSCH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with a Reduced Band Gap Zone
- Publication number 20170025408
- Publication date Jan 26, 2017
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Comprising a Clamping Structure
- Publication number 20170018544
- Publication date Jan 19, 2017
- Infineon Technologies Austria AG
- Stephan Voss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ion Implantation Apparatus with Ion Beam Directing Unit
- Publication number 20160305012
- Publication date Oct 20, 2016
- INFINEON TECHNOLOGIES AG
- Alexander Breymesser
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Semiconductor Device With Channelstopper and Method for Producing t...
- Publication number 20160293691
- Publication date Oct 6, 2016
- INFINEON TECHNOLOGIES AG
- Elmar Falck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Insulated Gate Bipolar Transistor Comprising Negative Temperature C...
- Publication number 20160111415
- Publication date Apr 21, 2016
- INFINEON TECHNOLOGIES AG
- Thomas Basler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Treating a Semiconductor Wafer
- Publication number 20150371858
- Publication date Dec 24, 2015
- INFINEON TECHNOLOGIES AG
- Johannes Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Including at Least One Type of Deep-Level Dopant
- Publication number 20150270347
- Publication date Sep 24, 2015
- INFINEON TECHNOLOGIES AG
- Stephan Voss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Implantation Apparatus with Ion Beam Directing Unit, Semiconductor...
- Publication number 20150228446
- Publication date Aug 13, 2015
- INFINEON TECHNOLOGIES AG
- Alexander Breymesser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE WITH INTEGRATED GATE-RESISTOR
- Publication number 20150228744
- Publication date Aug 13, 2015
- Stephan Voss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Edge Termination Structure with Trench Isolation Regions
- Publication number 20150041946
- Publication date Feb 12, 2015
- INFINEON TECHNOLOGIES AG
- Stephan Voss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power MOS Transistor with Integrated Gate-Resistor
- Publication number 20150028383
- Publication date Jan 29, 2015
- INFINEON TECHNOLOGIES AG
- Stephan Voss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20150028412
- Publication date Jan 29, 2015
- Infineon Technologies Austria AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Insulated Gate Bipolar Transistor Including Emitter Short Regions
- Publication number 20140291724
- Publication date Oct 2, 2014
- Stephan Voss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Including First and Second Semiconductor Mater...
- Publication number 20130307018
- Publication date Nov 21, 2013
- INFINEON TECHNOLOGIES AG
- Stephan Voss
- H01 - BASIC ELECTRIC ELEMENTS

Stephan Voss

Person

Patents Grantslast 30 patents

Semiconductor device with improved performance in operation and imp...

Methods for forming a semiconductor device having a second semicond...

Semiconductor device protection using an anti-reflective layer

Methods for forming a semiconductor device

Semiconductor package with signal distribution element

Method for processing a semiconductor wafer, semiconductor composit...

Method of manufacturing a semiconductor device comprising first and...

Semiconductor device comprising a clamping structure

Bipolar transistor with superjunction structure

Semiconductor device including at least one type of deep-level dopant

Semiconductor device and method for forming a semiconductor device

Semiconductor device with channelstopper and method for producing t...

Semiconductor device comprising a clamping structure

Power device with overvoltage arrester

Bipolar transistor with superjunction structure

Insulated gate semiconductor device with soft switching behavior

Semiconductor device

Semiconductor device with a reduced band gap zone

Insulated gate bipolar transistor comprising negative temperature c...

Ion implantation apparatus with ion beam directing unit

Method for treating a semiconductor wafer

Method of making a semiconductor device formed by thermal annealing

Transistor device with integrated gate-resistor

Semiconductor device

Implantation apparatus with ion beam directing unit, semiconductor...

Edge termination structure with trench isolation regions

Insulated gate bipolar transistor including emitter short regions

Semiconductor device including first and second semiconductor mater...

Power MOS transistor with integrated gate-resistor

Semiconductor device with staggered oxide-filled trenches at edge r...

Patents Applicationslast 30 patents

Methods for Forming a Semiconductor Device Having a Second Semicond...

Semiconductor Device with Improved Performance in Operation and Imp...

Method for Processing a Semiconductor Wafer and Semiconductor Compo...

SEMICONDUCTOR DEVICE PROTECTION

Methods for Forming a Semiconductor Device

Semiconductor Package with Signal Distribution Element

Method for Processing a Semiconductor Wafer, Semiconductor Composit...

Method of Manufacturing a Semiconductor Device Comprising First and...

Semiconductor Device Comprising a Clamping Structure

BIPOLAR TRANSISTOR WITH SUPERJUNCTION STRUCTURE

Semiconductor Device and Method for Forming a Semiconductor Device

METHOD OF MAKING A SEMICONDUCTOR DEVICE FORMED BY THERMAL ANNEALING

POWER DEVICE WITH OVERVOLTAGE ARRESTER

SEMICONDUCTOR DEVICE

INSULATED GATE SEMICONDUCTOR DEVICE WITH SOFT SWITCHING BEHAVIOR

BIPOLAR TRANSISTOR WITH SUPERJUNCTION STRUCTURE

Semiconductor Device with a Reduced Band Gap Zone

Semiconductor Device Comprising a Clamping Structure

Ion Implantation Apparatus with Ion Beam Directing Unit

Semiconductor Device With Channelstopper and Method for Producing t...

Insulated Gate Bipolar Transistor Comprising Negative Temperature C...

Method for Treating a Semiconductor Wafer

Semiconductor Device Including at Least One Type of Deep-Level Dopant

Implantation Apparatus with Ion Beam Directing Unit, Semiconductor...

TRANSISTOR DEVICE WITH INTEGRATED GATE-RESISTOR

Edge Termination Structure with Trench Isolation Regions

Power MOS Transistor with Integrated Gate-Resistor

SEMICONDUCTOR DEVICE

Insulated Gate Bipolar Transistor Including Emitter Short Regions

Semiconductor Device Including First and Second Semiconductor Mater...