Steve A. Markgraf

Person

Plymouth, MN, US

People

Patents Grantslast 30 patents

Information Patent Grant
Process for forming low defect density, ideal oxygen precipitating...
- Patent number 7,442,253
- Issue date Oct 28, 2008
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low defect density, ideal oxygen precipitating silicon
- Patent number 7,229,693
- Issue date Jun 12, 2007
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wafer level MEMS packaging
- Patent number 6,953,985
- Issue date Oct 11, 2005
- FREESCALE SEMICONDUCTOR, INC.
- Jong-Kai Lin
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Low cost fabrication and assembly of lid for semiconductor devices
- Patent number 6,949,398
- Issue date Sep 27, 2005
- Freescale Semiconductor, Inc.
- William H. Lytle
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Process for producing low defect density, ideal oxygen precipitatin...
- Patent number 6,896,728
- Issue date May 24, 2005
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vacancy, dominsated, defect-free silicon
- Patent number 6,840,997
- Issue date Jan 11, 2005
- MEMC Electronic Materials, Inc.
- Robert A. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low defect density epitaxial wafer and a process for the preparatio...
- Patent number 6,632,278
- Issue date Oct 14, 2003
- MEMC Electronic Materials, Inc.
- Robert A. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing low defect density, ideal oxygen precipitatin...
- Patent number 6,555,194
- Issue date Apr 29, 2003
- MEMC Electronic Materials, Inc.
- Robert A. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low defect density, self-interstitial dominated silicon
- Patent number 6,409,826
- Issue date Jun 25, 2002
- MEMC Electronic Materials, Inc.
- Robert A. Falster
- C30 - CRYSTAL GROWTH
Information Patent Grant
Vacancy dominated, defect-free silicon
- Patent number 6,379,642
- Issue date Apr 30, 2002
- MEMC Electronic Materials, Inc.
- Robert A. Falster
- C30 - CRYSTAL GROWTH
Information Patent Grant
Low defect density self-interstitial dominated silicon
- Patent number 6,254,672
- Issue date Jul 3, 2001
- MEMC Electronic Materials, Inc.
- Robert A. Falster
- C30 - CRYSTAL GROWTH
Information Patent Grant
Low defect density, ideal oxygen precipitating silicon
- Patent number 6,190,631
- Issue date Feb 20, 2001
- MEMC Electronic Materials, Inc.
- Robert A. Falster
- C30 - CRYSTAL GROWTH
Information Patent Grant
Low defect density vacancy dominated silicon
- Patent number 5,919,302
- Issue date Jul 6, 1999
- MEMC Electronic Materials, Inc.
- Robert A. Falster
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
PROCESS FOR FORMING LOW DEFECT DENSITY, IDEAL OXYGEN PRECIPITATING...
- Publication number 20070224783
- Publication date Sep 27, 2007
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
Vacancy-dominated, defect-free silicon
- Publication number 20050238905
- Publication date Oct 27, 2005
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
Low defect density, ideal oxygen precipitating silicon
- Publication number 20050170610
- Publication date Aug 4, 2005
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
Process for producing low defect density silicon
- Publication number 20040089224
- Publication date May 13, 2004
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
Low cost fabrication and assembly of lid for semiconductor devices
- Publication number 20040087053
- Publication date May 6, 2004
- MOTOROLA INC.
- William H. Lytle
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
Process for producing low defect density, ideal oxygen precipitatin...
- Publication number 20040025782
- Publication date Feb 12, 2004
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
MEMS control chip integration
- Publication number 20040016995
- Publication date Jan 29, 2004
- Shun Meen Kuo
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
Wafer level MEMS packaging
- Publication number 20030230798
- Publication date Dec 18, 2003
- Jong-Kai Lin
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
Vacancy, dominated, defect-free silicon
- Publication number 20030051657
- Publication date Mar 20, 2003
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
LOW DEFECT DENSITY EPITAXIAL WAFER AND A PROCESS FOR THE PREPARATIO...
- Publication number 20020170485
- Publication date Nov 21, 2002
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
Vacancy, dominsated, defect-free silicon
- Publication number 20020078880
- Publication date Jun 27, 2002
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
Low defect density, self-interstitial dominated silicon
- Publication number 20010025597
- Publication date Oct 4, 2001
- Robert J. Falster
- C30 - CRYSTAL GROWTH

Steve A. Markgraf

Person

Patents Grantslast 30 patents

Process for forming low defect density, ideal oxygen precipitating...

Low defect density, ideal oxygen precipitating silicon

Wafer level MEMS packaging

Low cost fabrication and assembly of lid for semiconductor devices

Process for producing low defect density, ideal oxygen precipitatin...

Vacancy, dominsated, defect-free silicon

Low defect density epitaxial wafer and a process for the preparatio...

Process for producing low defect density, ideal oxygen precipitatin...

Low defect density, self-interstitial dominated silicon

Vacancy dominated, defect-free silicon

Low defect density self-interstitial dominated silicon

Low defect density, ideal oxygen precipitating silicon

Low defect density vacancy dominated silicon

Patents Applicationslast 30 patents

PROCESS FOR FORMING LOW DEFECT DENSITY, IDEAL OXYGEN PRECIPITATING...

Vacancy-dominated, defect-free silicon

Low defect density, ideal oxygen precipitating silicon

Process for producing low defect density silicon

Low cost fabrication and assembly of lid for semiconductor devices

Process for producing low defect density, ideal oxygen precipitatin...

MEMS control chip integration

Wafer level MEMS packaging

Vacancy, dominated, defect-free silicon

LOW DEFECT DENSITY EPITAXIAL WAFER AND A PROCESS FOR THE PREPARATIO...

Vacancy, dominsated, defect-free silicon

Low defect density, self-interstitial dominated silicon