Steve Lytle

Person

Orlando, FL, US

People

Patents Grantslast 30 patents

Information Patent Grant
Define via in dual damascene process
- Patent number 7,160,799
- Issue date Jan 9, 2007
- Agere Systems Inc.
- Steven Alan Lytle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual damascene process with no passing metal features
- Patent number 6,989,602
- Issue date Jan 24, 2006
- Agere Systems Inc.
- Steven A. Lytle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split barrier layer including nitrogen-containing portion and oxyge...
- Patent number 6,879,046
- Issue date Apr 12, 2005
- Agere Systems Inc.
- Gerald W Gibson, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for isolating porous low-k dielectric films
- Patent number 6,798,043
- Issue date Sep 28, 2004
- Agere Systems, INC
- Kurt G. Steiner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of small openings in large topography features to improve diele...
- Patent number 6,555,910
- Issue date Apr 29, 2003
- Agere Systems Inc.
- Robert A. Ashton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked via Kelvin resistance test structure for measuring contact...
- Patent number 6,362,638
- Issue date Mar 26, 2002
- Agere Systems Guardian Corp.
- Robert Alan Ashton
- G01 - MEASURING TESTING
Information Patent Grant
Methods for fabricating a multilevel interconnection for an integra...
- Patent number 6,329,281
- Issue date Dec 11, 2001
- Agere Systems Guardian Corp.
- Steven Alan Lytle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for photoresist rework to avoid sodium incorporation
- Patent number 6,218,085
- Issue date Apr 17, 2001
- Lucent Technologies Inc.
- Simon J. Molloy
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Transistor fabrication method
- Patent number 5,891,784
- Issue date Apr 6, 1999
- Lucent Technologies, Inc.
- Wan Yee Cheung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doping of silicon layers
- Patent number 5,712,176
- Issue date Jan 27, 1998
- Lucent Technologies Inc.
- Steven Alan Lytle
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Define via in dual damascene process
- Publication number 20050067710
- Publication date Mar 31, 2005
- Steven Alan Lytle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Split barrier layer including nitrogen-containing portion and oxyge...
- Publication number 20030003765
- Publication date Jan 2, 2003
- Gerald W. Gibson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and method for isolating porous low-k dielectric films
- Publication number 20030001273
- Publication date Jan 2, 2003
- Kurt G. Steiner
- H01 - BASIC ELECTRIC ELEMENTS

Steve Lytle

Person

Patents Grantslast 30 patents

Define via in dual damascene process

Dual damascene process with no passing metal features

Split barrier layer including nitrogen-containing portion and oxyge...

Structure and method for isolating porous low-k dielectric films

Use of small openings in large topography features to improve diele...

Stacked via Kelvin resistance test structure for measuring contact...

Methods for fabricating a multilevel interconnection for an integra...

Process for photoresist rework to avoid sodium incorporation

Transistor fabrication method

Doping of silicon layers

Patents Applicationslast 30 patents

Define via in dual damascene process

Split barrier layer including nitrogen-containing portion and oxyge...

Structure and method for isolating porous low-k dielectric films