Steve Merchant

Person

Bedford, NH, US

People

Patents Grantslast 30 patents

Information Patent Grant
Isolation trench with rounded corners for BiCMOS process
- Patent number 8,274,131
- Issue date Sep 25, 2012
- Texas Instruments Incorporated
- Sameer P. Pendharkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Distributed high voltage JFET
- Patent number 7,910,417
- Issue date Mar 22, 2011
- Texas Instruments Incorporated
- Philip L. Hower
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation trench with rounded corners for BiCMOS process
- Patent number 7,846,789
- Issue date Dec 7, 2010
- Texas Instruments Incorporated
- Sameer P. Pendharkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage depletion FET employing a channel stopping implant
- Patent number 7,736,961
- Issue date Jun 15, 2010
- Texas Instruments Incorporated
- Steven L. Merchant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reliable high-voltage junction field effect transistor and method o...
- Patent number 7,704,813
- Issue date Apr 27, 2010
- Texas Instruments Incorporated
- Kaiyuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Distributed high voltage JFET
- Patent number 7,605,412
- Issue date Oct 20, 2009
- Texas Instruments Incorporated
- Philip L. Hower
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Distributed high voltage JFET
- Patent number 7,417,270
- Issue date Aug 26, 2008
- Texas Instruments Incorporated
- Philip L. Hower
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reliable high-voltage junction field effect transistor and method o...
- Patent number 7,312,481
- Issue date Dec 25, 2007
- Texas Instruments Incorporated
- Kaiyuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Distributed power MOSFET
- Patent number 7,187,034
- Issue date Mar 6, 2007
- Texas Instruments Incorporated
- Philip L. Hower
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Segmented power MOSFET of safe operation
- Patent number 6,815,276
- Issue date Nov 9, 2004
- Texas Instruments Incorporated
- Philip L. Hower
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bladed silicon-on-insulator semiconductor devices and method of making
- Patent number 6,800,917
- Issue date Oct 5, 2004
- Texas Instruments Incorporated
- Sheldon D. Haynie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bladed silicon-on-insulator semiconductor devices and method of making
- Patent number 6,797,547
- Issue date Sep 28, 2004
- Texas Instruments Incorporated
- Sheldon D. Haynie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double-diffused MOS (DMOS) power transistor with a channel compensa...
- Patent number 6,700,160
- Issue date Mar 2, 2004
- Texas Instruments Incorporated
- Steven L. Merchant
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ISOLATION TRENCH WITH ROUNDED CORNERS FOR BiCMOS PROCESS
- Publication number 20110073955
- Publication date Mar 31, 2011
- TEXAS INSTRUMENTS INCORPORATED
- Sameer P. Pendharkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BVDII Enhancement with a Cascode DMOS
- Publication number 20090159968
- Publication date Jun 25, 2009
- TEXAS INSTRUMENTS INCORPORATED
- Steve L. Merchant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION TRENCH WITH ROUNDED CORNERS FOR BiCMOS PROCESS
- Publication number 20090096033
- Publication date Apr 16, 2009
- TEXAS INSTRUMENTS INCORPORATED
- Sameer P. Pendharkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DISTRIBUTED HIGH VOLTAGE JFET
- Publication number 20080299716
- Publication date Dec 4, 2008
- TEXAS INSTRUMENTS INCORPORATED
- Philip L. Hower
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reliable High-Voltage Junction Field Effect Transistor and Method o...
- Publication number 20080090346
- Publication date Apr 17, 2008
- TEXAS INSTRUMENTS INCORPORATED
- Kaiyuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DISTRIBUTED HIGH VOLTAGE JFET
- Publication number 20070012958
- Publication date Jan 18, 2007
- Texas Instruments Inc.
- Philip L. Hower
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High voltage depletion FET employing a channel stopping implant
- Publication number 20060292771
- Publication date Dec 28, 2006
- TEXAS INSTRUMENTS INCORPORATED
- Steven L. Merchant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reliable high-voltage junction field effect transistor and method o...
- Publication number 20060071247
- Publication date Apr 6, 2006
- TEXAS INSTRUMENTS INCORPORATED
- Kaiyuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Distributed high voltage JFET
- Publication number 20050285157
- Publication date Dec 29, 2005
- Philip L. Hower
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Distributed power MOSFET
- Publication number 20040256669
- Publication date Dec 23, 2004
- Philip L. Hower
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bladed silicon-on-insulator semiconductor devices and method of making
- Publication number 20040222485
- Publication date Nov 11, 2004
- Sheldon D. Haynie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bladed silicon-on-insulator semiconductor devices and method of making
- Publication number 20040129976
- Publication date Jul 8, 2004
- Sheldon D. Haynie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bladed silicon-on-insulator semiconductor devices and method of making
- Publication number 20040113223
- Publication date Jun 17, 2004
- TEXAS INSTRUMENTS INCORPORATED
- Sheldon D. Haynie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Distributed power MOSFET
- Publication number 20040067617
- Publication date Apr 8, 2004
- Philip L. Hower
- H01 - BASIC ELECTRIC ELEMENTS

Steve Merchant

Person

Patents Grantslast 30 patents

Isolation trench with rounded corners for BiCMOS process

Distributed high voltage JFET

Isolation trench with rounded corners for BiCMOS process

High voltage depletion FET employing a channel stopping implant

Reliable high-voltage junction field effect transistor and method o...

Distributed high voltage JFET

Distributed high voltage JFET

Reliable high-voltage junction field effect transistor and method o...

Distributed power MOSFET

Segmented power MOSFET of safe operation

Bladed silicon-on-insulator semiconductor devices and method of making

Bladed silicon-on-insulator semiconductor devices and method of making

Double-diffused MOS (DMOS) power transistor with a channel compensa...

Patents Applicationslast 30 patents

ISOLATION TRENCH WITH ROUNDED CORNERS FOR BiCMOS PROCESS

BVDII Enhancement with a Cascode DMOS

ISOLATION TRENCH WITH ROUNDED CORNERS FOR BiCMOS PROCESS

DISTRIBUTED HIGH VOLTAGE JFET

Reliable High-Voltage Junction Field Effect Transistor and Method o...

DISTRIBUTED HIGH VOLTAGE JFET

High voltage depletion FET employing a channel stopping implant

Reliable high-voltage junction field effect transistor and method o...

Distributed high voltage JFET

Distributed power MOSFET

Bladed silicon-on-insulator semiconductor devices and method of making

Bladed silicon-on-insulator semiconductor devices and method of making

Bladed silicon-on-insulator semiconductor devices and method of making

Distributed power MOSFET