Steven C. H. HUNG

Person

Sunnyvale, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Metal based hydrogen barrier
- Patent number 12,020,982
- Issue date Jun 25, 2024
- Applied Materials, Inc.
- Srinivas Gandikota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-type dipole for P-FET
- Patent number 11,996,455
- Issue date May 28, 2024
- Applied Materials, Inc.
- Yongjing Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Treatments to enhance material structures
- Patent number 11,961,734
- Issue date Apr 16, 2024
- Applied Materials, Inc.
- Srinivas Gandikota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Treatments to enhance material structures
- Patent number 11,955,332
- Issue date Apr 9, 2024
- Applied Materials, Inc.
- Srinivas Gandikota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate all around I/O engineering
- Patent number 11,923,441
- Issue date Mar 5, 2024
- Applied Materials, Inc.
- Steven C. H. Hung
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Integrated dipole flow for transistor
- Patent number 11,888,045
- Issue date Jan 30, 2024
- Applied Materials, Inc.
- Yongjing Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-type dipole for p-FET
- Patent number 11,658,218
- Issue date May 23, 2023
- Applied Materials, Inc.
- Yongjing Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
PMOS high-K metal gates
- Patent number 11,552,177
- Issue date Jan 10, 2023
- Applied Materials, Inc.
- Srinivas Gandikota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate interface engineering with doped layer
- Patent number 11,456,178
- Issue date Sep 27, 2022
- Applied Materials, Inc.
- Steven C. H. Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate all around I/O engineering
- Patent number 11,450,759
- Issue date Sep 20, 2022
- Applied Materials, Inc.
- Steven C. H. Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Treatments to enhance material structures
- Patent number 11,417,517
- Issue date Aug 16, 2022
- Applied Materials, Inc.
- Srinivas Gandikota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-type dipole for p-FET
- Patent number 11,289,579
- Issue date Mar 29, 2022
- Applied Materials, Inc.
- Yongjing Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cap oxidation for FinFET formation
- Patent number 11,271,097
- Issue date Mar 8, 2022
- Applied Materials, Inc.
- Steven C. Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated dipole flow for transistor
- Patent number 11,245,022
- Issue date Feb 8, 2022
- Applied Materials, Inc.
- Yongjing Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diffusion barrier layer
- Patent number 11,189,479
- Issue date Nov 30, 2021
- Applied Materials, Inc.
- Benjamin Colombeau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fluorine-doped nitride films for improved high-k reliability
- Patent number 11,171,047
- Issue date Nov 9, 2021
- Applied Materials, Inc.
- Yixiong Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and apparatus for n-type metal oxide semiconductor (NMOS) m...
- Patent number 11,075,276
- Issue date Jul 27, 2021
- Applied Materials, Inc.
- Yongjing Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of reducing effective oxide thickness in a semiconductor str...
- Patent number 11,062,900
- Issue date Jul 13, 2021
- Applied Materials, Inc.
- Luping Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Treatments to enhance material structures
- Patent number 10,872,763
- Issue date Dec 22, 2020
- Applied Materials, Inc.
- David Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hydrogenation and nitridization processes for modifying effective o...
- Patent number 10,510,545
- Issue date Dec 17, 2019
- Applied Materials, Inc.
- Houda Graoui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hydrogenation and nitridization processes for modifying effective o...
- Patent number 10,431,466
- Issue date Oct 1, 2019
- Applied Materials, Inc.
- Johanes S. Swenberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Modifying work function of a metal film with a plasma process
- Patent number 10,347,492
- Issue date Jul 9, 2019
- Applied Materials, Inc.
- Steven C. H. Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-threshold voltage structures with a lanthanum nitride film an...
- Patent number 9,748,354
- Issue date Aug 29, 2017
- Applied Materials, Inc.
- Wei V. Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Engineering induced tunable electrostatic effect
- Patent number 9,437,640
- Issue date Sep 6, 2016
- Applied Materials, Inc.
- Sherry Mings
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for forming gate stack on Si, SiGe or Ge channels
- Patent number 9,373,516
- Issue date Jun 21, 2016
- Applied Materials, Inc.
- Khaled Z. Ahmed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of adjusting a transistor gate flat band voltage with additi...
- Patent number 9,275,853
- Issue date Mar 1, 2016
- Applied Materials, Inc.
- Tatsuya Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating dielectric films from metal amidinate precur...
- Patent number 9,269,574
- Issue date Feb 23, 2016
- Applied Materials, Inc.
- Steven Hung
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods for manufacturing high dielectric constant films
- Patent number 8,927,438
- Issue date Jan 6, 2015
- Applied Materials, Inc.
- Hyungjun Kim
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of fabricating a high dielectric constant transistor gate us...
- Patent number 7,837,838
- Issue date Nov 23, 2010
- Applied Materials, Inc.
- Thai Cheng Chua
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method and apparatus for fabricating a high dielectric constant tra...
- Patent number 7,678,710
- Issue date Mar 16, 2010
- Applied Materials, Inc.
- Thai Cheng Chua
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METAL BASED HYDROGEN BARRIER
- Publication number 20240194526
- Publication date Jun 13, 2024
- Applied Materials, Inc.
- Srinivas Gandikota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR PATTERNING SUBSTRATES TO ADJUST VOLTAGE PROPERTIES
- Publication number 20230402291
- Publication date Dec 14, 2023
- Applied Materials, Inc.
- Steven C. H. HUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR PATTERNING SUBSTRATES TO ADJUST VOLTAGE PROPERTIES
- Publication number 20230377901
- Publication date Nov 23, 2023
- Applied Materials, Inc.
- Steven C. H. HUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED DIPOLE REGION FOR TRANSISTOR
- Publication number 20230260791
- Publication date Aug 17, 2023
- Applied Materials, Inc.
- Srinivas Gandikota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-TYPE DIPOLE FOR P-FET
- Publication number 20230253466
- Publication date Aug 10, 2023
- Applied Materials, Inc.
- Yongjing Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PMOS HIGH-K METAL GATES
- Publication number 20230097400
- Publication date Mar 30, 2023
- Applied Materials, Inc.
- Srinivas Gandikota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED WET CLEAN FOR GATE STACK DEVELOPMENT
- Publication number 20230010499
- Publication date Jan 12, 2023
- Applied Materials, Inc.
- Brian K. Kirkpatrick
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate All Around I/O Engineering
- Publication number 20220399457
- Publication date Dec 15, 2022
- Applied Materials, Inc.
- Steven C.H. Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TREATMENTS TO ENHANCE MATERIAL STRUCTURES
- Publication number 20220328308
- Publication date Oct 13, 2022
- Applied Materials, Inc.
- Srinivas GANDIKOTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TREATMENTS TO ENHANCE MATERIAL STRUCTURES
- Publication number 20220262629
- Publication date Aug 18, 2022
- Applied Materials, Inc.
- Srinivas GANDIKOTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Amorphous Silicon-Based Scavenging And Sealing EOT
- Publication number 20220254640
- Publication date Aug 11, 2022
- Applied Materials, Inc.
- Yong Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET GATE ENGINEERINNG WITH DIPOLE FILMS
- Publication number 20220254900
- Publication date Aug 11, 2022
- Applied Materials, Inc.
- Yong Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THRESHOLD VOLTAGE MODULATION FOR GATE-ALL-AROUND FET ARCHITECTURE
- Publication number 20220238680
- Publication date Jul 28, 2022
- Applied Materials, Inc.
- Steven C. H. HUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-Type Dipole For P-FET
- Publication number 20220165854
- Publication date May 26, 2022
- Applied Materials, Inc.
- Yongjing Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL BASED HYDROGEN BARRIER
- Publication number 20220157654
- Publication date May 19, 2022
- Applied Materials, Inc.
- Srinivas Gandikota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED DIPOLE FLOW FOR TRANSISTOR
- Publication number 20220115516
- Publication date Apr 14, 2022
- Applied Materials, Inc.
- Yongjing Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PMOS HIGH-K METAL GATES
- Publication number 20220077298
- Publication date Mar 10, 2022
- Applied Material, Inc.
- SRINIVAS GANDIKOTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE INTERFACE ENGINEERING WITH DOPED LAYER
- Publication number 20210398814
- Publication date Dec 23, 2021
- Applied Materials, Inc.
- Steven C. H. Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Treatments To Improve Device Performance
- Publication number 20210193468
- Publication date Jun 24, 2021
- Applied Materials, Inc.
- Steven C.H. Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAP OXIDATION FOR FINFET FORMATION
- Publication number 20210134986
- Publication date May 6, 2021
- Applied Materials, Inc.
- Steven C. Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PMOS High-K Metal Gates
- Publication number 20210134972
- Publication date May 6, 2021
- Applied Materials, Inc.
- Yixiong Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TREATMENTS TO ENHANCE MATERIAL STRUCTURES
- Publication number 20210111020
- Publication date Apr 15, 2021
- Applied Materials, Inc.
- Srinivas GANDIKOTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate All Around I/O Engineering
- Publication number 20210104617
- Publication date Apr 8, 2021
- Applied Materials, Inc.
- Steven C.H. Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL METHOD FOR GATE INTERFACE ENGINEERING
- Publication number 20210104401
- Publication date Apr 8, 2021
- Applied Materials, Inc.
- Steven C. Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-Type Dipole For P-FET
- Publication number 20210098581
- Publication date Apr 1, 2021
- Applied Materials, Inc.
- Yongjing Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TREATMENTS TO ENHANCE MATERIAL STRUCTURES
- Publication number 20210057215
- Publication date Feb 25, 2021
- Applied Materials, Inc.
- Steven C. H. HUNG
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Fluorine-Doped Nitride Films for Improved High-K Reliability
- Publication number 20200411373
- Publication date Dec 31, 2020
- Applied Materials, Inc.
- Yixiong Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED DIPOLE FLOW FOR TRANSISTOR
- Publication number 20200373404
- Publication date Nov 26, 2020
- Applied Materials, Inc.
- Yongjing Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL BASED HYDROGEN BARRIER
- Publication number 20200373200
- Publication date Nov 26, 2020
- Applied Materials, Inc.
- Srinivas Gandikota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Diffusion Barrier Layer
- Publication number 20200357629
- Publication date Nov 12, 2020
- Applied Materials, Inc.
- Benjamin Colombeau
- H01 - BASIC ELECTRIC ELEMENTS

Steven C. H. HUNG

Person

Patents Grantslast 30 patents

Metal based hydrogen barrier

P-type dipole for P-FET

Treatments to enhance material structures

Treatments to enhance material structures

Gate all around I/O engineering

Integrated dipole flow for transistor

P-type dipole for p-FET

PMOS high-K metal gates

Gate interface engineering with doped layer

Gate all around I/O engineering

Treatments to enhance material structures

P-type dipole for p-FET

Cap oxidation for FinFET formation

Integrated dipole flow for transistor

Diffusion barrier layer

Fluorine-doped nitride films for improved high-k reliability

Methods and apparatus for n-type metal oxide semiconductor (NMOS) m...

Method of reducing effective oxide thickness in a semiconductor str...

Treatments to enhance material structures

Hydrogenation and nitridization processes for modifying effective o...

Hydrogenation and nitridization processes for modifying effective o...

Modifying work function of a metal film with a plasma process

Multi-threshold voltage structures with a lanthanum nitride film an...

Engineering induced tunable electrostatic effect

Method and apparatus for forming gate stack on Si, SiGe or Ge channels

Method of adjusting a transistor gate flat band voltage with additi...

Methods of fabricating dielectric films from metal amidinate precur...

Methods for manufacturing high dielectric constant films

Method of fabricating a high dielectric constant transistor gate us...

Method and apparatus for fabricating a high dielectric constant tra...

Patents Applicationslast 30 patents

METAL BASED HYDROGEN BARRIER

METHODS FOR PATTERNING SUBSTRATES TO ADJUST VOLTAGE PROPERTIES

METHODS FOR PATTERNING SUBSTRATES TO ADJUST VOLTAGE PROPERTIES

INTEGRATED DIPOLE REGION FOR TRANSISTOR

P-TYPE DIPOLE FOR P-FET

PMOS HIGH-K METAL GATES

INTEGRATED WET CLEAN FOR GATE STACK DEVELOPMENT

Gate All Around I/O Engineering

TREATMENTS TO ENHANCE MATERIAL STRUCTURES

TREATMENTS TO ENHANCE MATERIAL STRUCTURES

Amorphous Silicon-Based Scavenging And Sealing EOT

MOSFET GATE ENGINEERINNG WITH DIPOLE FILMS

THRESHOLD VOLTAGE MODULATION FOR GATE-ALL-AROUND FET ARCHITECTURE

P-Type Dipole For P-FET

METAL BASED HYDROGEN BARRIER

INTEGRATED DIPOLE FLOW FOR TRANSISTOR

PMOS HIGH-K METAL GATES

GATE INTERFACE ENGINEERING WITH DOPED LAYER

Treatments To Improve Device Performance

CAP OXIDATION FOR FINFET FORMATION

PMOS High-K Metal Gates

TREATMENTS TO ENHANCE MATERIAL STRUCTURES

Gate All Around I/O Engineering

NOVEL METHOD FOR GATE INTERFACE ENGINEERING

P-Type Dipole For P-FET

TREATMENTS TO ENHANCE MATERIAL STRUCTURES

Fluorine-Doped Nitride Films for Improved High-K Reliability

INTEGRATED DIPOLE FLOW FOR TRANSISTOR

METAL BASED HYDROGEN BARRIER

Diffusion Barrier Layer