Steven Kosier

Person

Lakeville, MN, US

People

Patents Grantslast 30 patents

Information Patent Grant
Trench semiconductor device layout configurations
- Patent number 11,245,006
- Issue date Feb 8, 2022
- Polar Semiconductor, LLC
- Dosi Dosev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage MOSFET structures
- Patent number 10,896,885
- Issue date Jan 19, 2021
- Polar Semiconductor, LLC
- Peter West
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and system for simultaneous sensing a magnetic field and...
- Patent number 10,746,817
- Issue date Aug 18, 2020
- ALLEGRO MICROSYSTEMS, LLC
- Steven Kosier
- G01 - MEASURING TESTING
Information Patent Grant
Trench semiconductor device layout configurations
- Patent number 10,580,861
- Issue date Mar 3, 2020
- Polar Semiconductor, LLC
- Dosi Dosev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS transistor with lightly-doped annular RESURF periphery
- Patent number 10,153,366
- Issue date Dec 11, 2018
- Polar Semiconductor, LLC
- Thomas S. Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Drift-region field control of an LDMOS transistor using biased shal...
- Patent number 10,141,440
- Issue date Nov 27, 2018
- Polar Semiconductor, LLC
- Steven Kosier
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
High voltage tolerant bonding pad structure for trench-based semico...
- Patent number 9,899,343
- Issue date Feb 20, 2018
- Polar Semiconductor, LLC
- Peter West
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and system for simultaneous sensing a magnetic field and...
- Patent number 9,851,417
- Issue date Dec 26, 2017
- Allegro Microsystems, LLC
- Steven Kosier
- G01 - MEASURING TESTING
Information Patent Grant
Termination trench structures for high-voltage split-gate MOS devices
- Patent number 9,818,828
- Issue date Nov 14, 2017
- Polar Semiconductor, LLC
- Peter West
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical hall effect sensor
- Patent number 9,735,345
- Issue date Aug 15, 2017
- Allegro Microsystems, LLC
- Steven Kosier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical hall effect sensor
- Patent number 9,312,473
- Issue date Apr 12, 2016
- Allegro Microsystems, LLC
- Steven Kosier
- G01 - MEASURING TESTING
Information Patent Grant
Anisotropic magnetoresistive (AMR) sensors and techniques for fabri...
- Patent number 9,013,838
- Issue date Apr 21, 2015
- Allegro Microsystems, LLC
- David G. Erie
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Integrated hybrid hall effect transducer
- Patent number 8,736,003
- Issue date May 27, 2014
- Allegro Microsystems, LLC
- David Erie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode structure to suppress parasitic current
- Patent number 7,466,004
- Issue date Dec 16, 2008
- Polar Semiconductor, Inc.
- Steven L. Kosier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistor antifuse
- Patent number 7,071,533
- Issue date Jul 4, 2006
- Polar Semiconductor, Inc.
- Kurt N. Kimber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for defining a semiconductor device layout
- Patent number 6,804,809
- Issue date Oct 12, 2004
- PolarFab, LLC
- Peter West
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Guard ring structure for reducing crosstalk and latch-up in integra...
- Patent number 6,747,294
- Issue date Jun 8, 2004
- PolarFab LLC
- Sandhya Gupta
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TRENCH SEMICONDUCTOR DEVICE LAYOUT CONFIGURATIONS
- Publication number 20200127092
- Publication date Apr 23, 2020
- Polar Semiconductor, LLC
- Dosi Dosev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-VOLTAGE MOSFET STRUCTURES
- Publication number 20190081016
- Publication date Mar 14, 2019
- Polar Semiconductor, LLC
- Peter West
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET WITH VERTICAL VARIATION OF GATE-PILLAR SEPARATION
- Publication number 20190081147
- Publication date Mar 14, 2019
- Polar Semiconductor, LLC
- Peter West
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and System for Simultaneous Sensing a Magnetic Field and...
- Publication number 20180321329
- Publication date Nov 8, 2018
- Allegro Microsystems, LLC
- Steven Kosier
- G01 - MEASURING TESTING
Information Patent Application
TRENCH SEMICONDUCTOR DEVICE LAYOUT CONFIGURATIONS
- Publication number 20180175146
- Publication date Jun 21, 2018
- Polar Semiconductor, LLC
- Dosi Dosev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE TOLERANT BONDING PAD STRUCTURE FOR TRENCH-BASED SEMICO...
- Publication number 20170263580
- Publication date Sep 14, 2017
- Polar Semiconductor, LLC
- Peter West
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS TRANSISTOR WITH LIGHTLY-DOPED ANNULAR RESURF PERIPHERY
- Publication number 20170263759
- Publication date Sep 14, 2017
- Polar Semiconductor, LLC
- Thomas S. Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TERMINATION TRENCH STRUCTURES FOR HIGH-VOLTAGE SPLIT-GATE MOS DEVICES
- Publication number 20170263718
- Publication date Sep 14, 2017
- Polar Semiconductor, LLC
- Peter West
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRIFT-REGION FIELD CONTROL OF AN LDMOS TRANSISTOR USING BIASED SHAL...
- Publication number 20170263765
- Publication date Sep 14, 2017
- Polar Semiconductor, LLC
- Steven Kosier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT-GATE SUPERJUNCTION POWER TRANSISTOR
- Publication number 20170194485
- Publication date Jul 6, 2017
- Polar Semiconductor, LLC
- Christopher Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND SYSTEM FOR SIMULTANEOUS SENSING A MAGNETIC FIELD AND...
- Publication number 20170030980
- Publication date Feb 2, 2017
- Allegro Microsystems, LLC
- Steven Kosier
- G01 - MEASURING TESTING
Information Patent Application
TRENCH SEMICONDUCTOR DEVICE LAYOUT CONFIGURATIONS
- Publication number 20160247879
- Publication date Aug 25, 2016
- Polar Semiconductor, LLC
- Dosi Dosev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL HALL EFFECT SENSOR
- Publication number 20160190433
- Publication date Jun 30, 2016
- Allegro Microsystems, LLC
- Steven Kosier
- G01 - MEASURING TESTING
Information Patent Application
ANISOTROPIC MAGNETORESISTIVE (AMR) SENSORS AND TECHNIQUES FOR FABRI...
- Publication number 20150091559
- Publication date Apr 2, 2015
- Allegro Microsystems, LLC
- David G. Erie
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
VERTICAL HALL EFFECT SENSOR
- Publication number 20150091112
- Publication date Apr 2, 2015
- Allegro Microsystems, LLC
- Steven Kosier
- G01 - MEASURING TESTING
Information Patent Application
INTEGRATED HYBRID HALL EFFECT TRANSDUCER
- Publication number 20110147865
- Publication date Jun 23, 2011
- Polar Semiconductor, Inc.
- David Erie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Diode structure to suppress parasitic current
- Publication number 20070290289
- Publication date Dec 20, 2007
- Polar Semiconductor, Inc.
- Steven L. Kosier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low trigger voltage electrostatic discharge protection device
- Publication number 20070080403
- Publication date Apr 12, 2007
- David Litfin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-layered spacer for lightly-doped drain MOSFETS
- Publication number 20060270165
- Publication date Nov 30, 2006
- Polar Semiconductor, Inc.
- Kyeonglan Rho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multilayered emitter window for bipolar junction transistor
- Publication number 20060267146
- Publication date Nov 30, 2006
- Polar Semiconductor, Inc.
- Noel Hoilien
- H01 - BASIC ELECTRIC ELEMENTS

Steven Kosier

Person

Patents Grantslast 30 patents

Trench semiconductor device layout configurations

High-voltage MOSFET structures

Structure and system for simultaneous sensing a magnetic field and...

Trench semiconductor device layout configurations

LDMOS transistor with lightly-doped annular RESURF periphery

Drift-region field control of an LDMOS transistor using biased shal...

High voltage tolerant bonding pad structure for trench-based semico...

Structure and system for simultaneous sensing a magnetic field and...

Termination trench structures for high-voltage split-gate MOS devices

Vertical hall effect sensor

Vertical hall effect sensor

Anisotropic magnetoresistive (AMR) sensors and techniques for fabri...

Integrated hybrid hall effect transducer

Diode structure to suppress parasitic current

Bipolar junction transistor antifuse

System and method for defining a semiconductor device layout

Guard ring structure for reducing crosstalk and latch-up in integra...

Patents Applicationslast 30 patents

TRENCH SEMICONDUCTOR DEVICE LAYOUT CONFIGURATIONS

HIGH-VOLTAGE MOSFET STRUCTURES

MOSFET WITH VERTICAL VARIATION OF GATE-PILLAR SEPARATION

Structure and System for Simultaneous Sensing a Magnetic Field and...

TRENCH SEMICONDUCTOR DEVICE LAYOUT CONFIGURATIONS

HIGH VOLTAGE TOLERANT BONDING PAD STRUCTURE FOR TRENCH-BASED SEMICO...

LDMOS TRANSISTOR WITH LIGHTLY-DOPED ANNULAR RESURF PERIPHERY

TERMINATION TRENCH STRUCTURES FOR HIGH-VOLTAGE SPLIT-GATE MOS DEVICES

DRIFT-REGION FIELD CONTROL OF AN LDMOS TRANSISTOR USING BIASED SHAL...

SPLIT-GATE SUPERJUNCTION POWER TRANSISTOR

STRUCTURE AND SYSTEM FOR SIMULTANEOUS SENSING A MAGNETIC FIELD AND...

TRENCH SEMICONDUCTOR DEVICE LAYOUT CONFIGURATIONS

VERTICAL HALL EFFECT SENSOR

ANISOTROPIC MAGNETORESISTIVE (AMR) SENSORS AND TECHNIQUES FOR FABRI...

VERTICAL HALL EFFECT SENSOR

INTEGRATED HYBRID HALL EFFECT TRANSDUCER

Diode structure to suppress parasitic current

Low trigger voltage electrostatic discharge protection device

Multi-layered spacer for lightly-doped drain MOSFETS

Multilayered emitter window for bipolar junction transistor