Steven Langdon

Person

Dresden, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Reduced threshold voltage-width dependency in transistors comprisin...
- Patent number 9,425,052
- Issue date Aug 23, 2016
- GLOBALFOUNDRIES Inc.
- Thilo Scheiper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced threshold voltage-width dependency in transistors comprisin...
- Patent number 9,048,336
- Issue date Jun 2, 2015
- GLOBALFOUNDRIES Inc.
- Thilo Scheiper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-diffusion drain and source regions in CMOS transistors for low...
- Patent number 8,664,068
- Issue date Mar 4, 2014
- GLOBALFOUNDRIES Inc.
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating integrated circuits using non-oxidizing res...
- Patent number 8,586,440
- Issue date Nov 19, 2013
- GLOBALFOUNDRIES, INC.
- Stefan Flachowsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with work function adjusting layer having vari...
- Patent number 8,508,001
- Issue date Aug 13, 2013
- GLOBALFOUNDRIES Inc.
- Steven Langdon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Drive current increase in field effect transistors by asymmetric co...
- Patent number 8,501,601
- Issue date Aug 6, 2013
- GLOBALFOUNDRIES Inc.
- Stefan Flachowsky
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
REDUCED THRESHOLD VOLTAGE-WIDTH DEPENDENCY IN TRANSISTORS COMPRISIN...
- Publication number 20150228490
- Publication date Aug 13, 2015
- GLOBALFOUNDRIES INC.
- Thilo SCHEIPER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device With Work Function Adjusting Layer Having Vari...
- Publication number 20130049139
- Publication date Feb 28, 2013
- GLOBALFOUNDRIES INC.
- Steve Langdon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FABRICATING INTEGRATED CIRCUITS USING NON-OXIDIZING RES...
- Publication number 20130029464
- Publication date Jan 31, 2013
- GLOBALFOUNDRIES INC.
- Stefan Flachowsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Drive Current Increase in Field Effect Transistors by Asymmetric Co...
- Publication number 20120193708
- Publication date Aug 2, 2012
- GLOBALFOUNDRIES INC.
- Stefan Flachowsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low-Diffusion Drain and Source Regions in CMOS Transistors for Low...
- Publication number 20120153399
- Publication date Jun 21, 2012
- GLOBALFOUNDRIES INC.
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reduced Threshold Voltage-Width Dependency in Transistors Comprisin...
- Publication number 20120049293
- Publication date Mar 1, 2012
- GLOBALFOUNDRIES INC.
- Thilo SCHEIPER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Polysilicon Resistors Formed in a Semiconductor Device Comprising H...
- Publication number 20120049291
- Publication date Mar 1, 2012
- GLOBALFOUNDRIES INC.
- Thilo Scheiper
- H01 - BASIC ELECTRIC ELEMENTS

Steven Langdon

Person

Patents Grantslast 30 patents

Reduced threshold voltage-width dependency in transistors comprisin...

Reduced threshold voltage-width dependency in transistors comprisin...

Low-diffusion drain and source regions in CMOS transistors for low...

Methods for fabricating integrated circuits using non-oxidizing res...

Semiconductor device with work function adjusting layer having vari...

Drive current increase in field effect transistors by asymmetric co...

Patents Applicationslast 30 patents

REDUCED THRESHOLD VOLTAGE-WIDTH DEPENDENCY IN TRANSISTORS COMPRISIN...

Semiconductor Device With Work Function Adjusting Layer Having Vari...

METHODS FOR FABRICATING INTEGRATED CIRCUITS USING NON-OXIDIZING RES...

Drive Current Increase in Field Effect Transistors by Asymmetric Co...

Low-Diffusion Drain and Source Regions in CMOS Transistors for Low...

Reduced Threshold Voltage-Width Dependency in Transistors Comprisin...

Polysilicon Resistors Formed in a Semiconductor Device Comprising H...