Steven M. Shank

Person

Jericho, VT, US

People

Patents Grantslast 30 patents

Information Patent Grant
Heterojunction bipolar transistor with buried trap rich isolation r...
- Patent number 12,170,313
- Issue date Dec 17, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor
- Patent number 12,142,686
- Issue date Nov 12, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Anthony K. Stamper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IC structure including porous semiconductor layer in bulk substrate...
- Patent number 12,119,352
- Issue date Oct 15, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Uzma B. Rana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IC structure including porous semiconductor layer under trench isol...
- Patent number 12,027,582
- Issue date Jul 2, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Uzma B. Rana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure including resistor network for back biasing FET stack
- Patent number 12,028,053
- Issue date Jul 2, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Steven M. Shank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Photodetector with buried airgap reflectors
- Patent number 12,027,553
- Issue date Jul 2, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Siva P. Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure with substrate-embedded arrow waveguide and method
- Patent number 11,977,258
- Issue date May 7, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Laura J. Silverstein
- G02 - OPTICS
Information Patent Grant
Edge couplers integrated with dual ring resonators
- Patent number 11,880,065
- Issue date Jan 23, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Yusheng Bian
- G02 - OPTICS
Information Patent Grant
Field-effect transistors with a crystalline body embedded in a tren...
- Patent number 11,862,511
- Issue date Jan 2, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Steven M. Shank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor with emitter base junction oxide...
- Patent number 11,848,192
- Issue date Dec 19, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Efuse inside and gate structure on triple-well region
- Patent number 11,848,324
- Issue date Dec 19, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Ephrem G. Gebreselasie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bulk wafer switch isolation
- Patent number 11,823,948
- Issue date Nov 21, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Uzma Rana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Waveguide structures
- Patent number 11,822,122
- Issue date Nov 21, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Yusheng Bian
- G02 - OPTICS
Information Patent Grant
Transistor with air gap under raised source/drain region in bulk se...
- Patent number 11,817,479
- Issue date Nov 14, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Uzma B. Rana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-based photodetector structure
- Patent number 11,810,989
- Issue date Nov 7, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Ajey Poovannummoottil Jacob
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Photonics structures having a locally-thickened dielectric layer
- Patent number 11,803,009
- Issue date Oct 31, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Shesh Mani Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor with buried trap rich isolation r...
- Patent number 11,791,334
- Issue date Oct 17, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with shallow trench isolation features with...
- Patent number 11,764,225
- Issue date Sep 19, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Anthony K. Stamper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistors with a body pedestal
- Patent number 11,764,060
- Issue date Sep 19, 2023
- GLOBALFOUNDRIES U.S. INC.
- Michel J. Abou-Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bulk substrates with a self-aligned buried polycrystalline layer
- Patent number 11,749,559
- Issue date Sep 5, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Steven M. Shank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with embedded isolation layer in bulk substrate
- Patent number 11,749,717
- Issue date Sep 5, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Uzma Rana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertically stacked field effect transistors
- Patent number 11,728,348
- Issue date Aug 15, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Anthony K. Stamper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spot-size converters with angled facets
- Patent number 11,719,895
- Issue date Aug 8, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Yusheng Bian
- G02 - OPTICS
Information Patent Grant
Heterojunction bipolar transistor with buried trap rich isolation r...
- Patent number 11,721,719
- Issue date Aug 8, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IC structure including porous semiconductor layer under trench isol...
- Patent number 11,677,000
- Issue date Jun 13, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Uzma B. Rana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Photodiode with integrated, self-aligned light focusing element
- Patent number 11,664,470
- Issue date May 30, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Rajendran Krishnasamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure providing poly-resistor under shallow trench isolation an...
- Patent number 11,664,412
- Issue date May 30, 2023
- GLOBALFOUNDRIES U.S. INC.
- Michael J. Zierak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Switchable polarization rotators
- Patent number 11,644,620
- Issue date May 9, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Yusheng Bian
- G02 - OPTICS
Information Patent Grant
Device including optofluidic sensor with integrated photodiode
- Patent number 11,639,895
- Issue date May 2, 2023
- GLOBALFOUNDRIES U.S. INC.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thermally and electrically conductive interconnects
- Patent number 11,637,068
- Issue date Apr 25, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Anthony K. Stamper
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTOR WITH BURIED TRAP RICH ISOLATION R...
- Publication number 20250015128
- Publication date Jan 9, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor JAIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CONTROLLED RECTIFIERS
- Publication number 20240347528
- Publication date Oct 17, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Anindya NATH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURES WITH INTERLEAVED BODY CONTACTS AND GATE CONTACTS
- Publication number 20240243175
- Publication date Jul 18, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Venkata Narayana Rao Vanukuru
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATES OF SEMICONDUCTOR DEVICES FOR HEAT DISSIPATION
- Publication number 20240222224
- Publication date Jul 4, 2024
- GLOBALFOUNDRIES U.S. Inc.
- SIVA P. ADUSUMILLI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IC STRUCTURE WITH GATE ELECTRODE FULLY WITHIN V-SHAPED CAVITY
- Publication number 20240178290
- Publication date May 30, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Megan Lydon-Nuhfer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURES WITH BURIED FLUIDIC CHANNELS
- Publication number 20240162116
- Publication date May 16, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Siva P. ADUSUMILLI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRO-ABSORPTION MODULATORS WITH STACKED WAVEGUIDE TAPERS
- Publication number 20240085624
- Publication date Mar 14, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Yusheng Bian
- G02 - OPTICS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURES ISOLATED BY POROUS SEMICONDUCTOR MA...
- Publication number 20240088157
- Publication date Mar 14, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Michel Abou-Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE INCLUDING GRATING COUPLER WITH OPTOFLUIDIC GRATING CHANNELS
- Publication number 20240045156
- Publication date Feb 8, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Yusheng Bian
- G02 - OPTICS
Information Patent Application
WAVEGUIDE STRUCTURES
- Publication number 20240045140
- Publication date Feb 8, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Yusheng Bian
- G02 - OPTICS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTOR WITH BURIED TRAP RICH ISOLATION R...
- Publication number 20230402453
- Publication date Dec 14, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor JAIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH SHALLOW TRENCH ISOLATION FEATURES WITH...
- Publication number 20230378183
- Publication date Nov 23, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Anthony K. STAMPER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTORS HAVING A GATE ELECTRODE POSITIONED INSIDE...
- Publication number 20230317776
- Publication date Oct 5, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Michel Abou-Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHOTODIODES
- Publication number 20230317869
- Publication date Oct 5, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Rajendran Krishnasamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTOR WITH BURIED TRAP RICH ISOLATION R...
- Publication number 20230299132
- Publication date Sep 21, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor JAIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHOTONICS STRUCTURES HAVING A LOCALLY-THICKENED DIELECTRIC LAYER
- Publication number 20230273369
- Publication date Aug 31, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Shesh Mani Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPOT-SIZE CONVERTERS WITH ANGLED FACETS
- Publication number 20230266544
- Publication date Aug 24, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Yusheng Bian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EDGE COUPLERS INTEGRATED WITH DUAL RING RESONATORS
- Publication number 20230244030
- Publication date Aug 3, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Yusheng Bian
- G02 - OPTICS
Information Patent Application
STRUCTURE PROVIDING POLY-RESISTOR UNDER SHALLOW TRENCH ISOLATION AN...
- Publication number 20230223425
- Publication date Jul 13, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Michael J. Zierak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IC STRUCTURE INCLUDING POROUS SEMICONDUCTOR LAYER IN BULK SUBSTRATE...
- Publication number 20230215869
- Publication date Jul 6, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Uzma B. Rana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE INCLUDING RESISTOR NETWORK FOR BACK BIASING FET STACK
- Publication number 20230188131
- Publication date Jun 15, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Steven M. Shank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTORS WITH A CRYSTALLINE BODY EMBEDDED IN A TREN...
- Publication number 20230154786
- Publication date May 18, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Steven M. Shank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT-OVER-ACTIVE-GATE TRANSISTOR STRUCTURES WITH CONTACTS LANDED...
- Publication number 20230125886
- Publication date Apr 27, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Steven M. Shank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IC STRUCTURE INCLUDING POROUS SEMICONDUCTOR LAYER UNDER TRENCH ISOL...
- Publication number 20230114096
- Publication date Apr 13, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Uzma B. Rana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IC STRUCTURE INCLUDING POROUS SEMICONDUCTOR LAYER UNDER TRENCH ISOL...
- Publication number 20230108712
- Publication date Apr 6, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Uzma B. Rana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH AIR GAP UNDER RAISED SOURCE/DRAIN REGION IN BULK SE...
- Publication number 20230096544
- Publication date Mar 30, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Uzma B. Rana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EFUSE INSIDE AND GATE STRUCTURE ON TRIPLE-WELL REGION
- Publication number 20230088425
- Publication date Mar 23, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Ephrem G. Gebreselasie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BULK SUBSTRATES WITH A SELF-ALIGNED BURIED POLYCRYSTALLINE LAYER
- Publication number 20230063731
- Publication date Mar 2, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Steven M. Shank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CONTACTS WITH AIRGAP ISOLATION
- Publication number 20220416020
- Publication date Dec 29, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Steven M. Shank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHOTODETECTOR WITH BURIED AIRGAP REFLECTORS
- Publication number 20220406833
- Publication date Dec 22, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Siva P. ADUSUMILLI
- H01 - BASIC ELECTRIC ELEMENTS

Steven M. Shank

Person

Patents Grantslast 30 patents

Heterojunction bipolar transistor with buried trap rich isolation r...

Field effect transistor

IC structure including porous semiconductor layer in bulk substrate...

IC structure including porous semiconductor layer under trench isol...

Structure including resistor network for back biasing FET stack

Photodetector with buried airgap reflectors

Structure with substrate-embedded arrow waveguide and method

Edge couplers integrated with dual ring resonators

Field-effect transistors with a crystalline body embedded in a tren...

Heterojunction bipolar transistor with emitter base junction oxide...

Efuse inside and gate structure on triple-well region

Bulk wafer switch isolation

Waveguide structures

Transistor with air gap under raised source/drain region in bulk se...

Fin-based photodetector structure

Photonics structures having a locally-thickened dielectric layer

Heterojunction bipolar transistor with buried trap rich isolation r...

Field effect transistor with shallow trench isolation features with...

Field-effect transistors with a body pedestal

Bulk substrates with a self-aligned buried polycrystalline layer

Transistor with embedded isolation layer in bulk substrate

Vertically stacked field effect transistors

Spot-size converters with angled facets

Heterojunction bipolar transistor with buried trap rich isolation r...

IC structure including porous semiconductor layer under trench isol...

Photodiode with integrated, self-aligned light focusing element

Structure providing poly-resistor under shallow trench isolation an...

Switchable polarization rotators

Device including optofluidic sensor with integrated photodiode

Thermally and electrically conductive interconnects

Patents Applicationslast 30 patents

HETEROJUNCTION BIPOLAR TRANSISTOR WITH BURIED TRAP RICH ISOLATION R...

SILICON CONTROLLED RECTIFIERS

TRANSISTOR STRUCTURES WITH INTERLEAVED BODY CONTACTS AND GATE CONTACTS

SUBSTRATES OF SEMICONDUCTOR DEVICES FOR HEAT DISSIPATION

IC STRUCTURE WITH GATE ELECTRODE FULLY WITHIN V-SHAPED CAVITY

STRUCTURES WITH BURIED FLUIDIC CHANNELS

ELECTRO-ABSORPTION MODULATORS WITH STACKED WAVEGUIDE TAPERS

SEMICONDUCTOR DEVICE STRUCTURES ISOLATED BY POROUS SEMICONDUCTOR MA...

STRUCTURE INCLUDING GRATING COUPLER WITH OPTOFLUIDIC GRATING CHANNELS

WAVEGUIDE STRUCTURES

HETEROJUNCTION BIPOLAR TRANSISTOR WITH BURIED TRAP RICH ISOLATION R...

FIELD EFFECT TRANSISTOR WITH SHALLOW TRENCH ISOLATION FEATURES WITH...

FIELD-EFFECT TRANSISTORS HAVING A GATE ELECTRODE POSITIONED INSIDE...

PHOTODIODES

HETEROJUNCTION BIPOLAR TRANSISTOR WITH BURIED TRAP RICH ISOLATION R...

PHOTONICS STRUCTURES HAVING A LOCALLY-THICKENED DIELECTRIC LAYER

SPOT-SIZE CONVERTERS WITH ANGLED FACETS

EDGE COUPLERS INTEGRATED WITH DUAL RING RESONATORS

STRUCTURE PROVIDING POLY-RESISTOR UNDER SHALLOW TRENCH ISOLATION AN...

IC STRUCTURE INCLUDING POROUS SEMICONDUCTOR LAYER IN BULK SUBSTRATE...

STRUCTURE INCLUDING RESISTOR NETWORK FOR BACK BIASING FET STACK

FIELD-EFFECT TRANSISTORS WITH A CRYSTALLINE BODY EMBEDDED IN A TREN...

CONTACT-OVER-ACTIVE-GATE TRANSISTOR STRUCTURES WITH CONTACTS LANDED...

IC STRUCTURE INCLUDING POROUS SEMICONDUCTOR LAYER UNDER TRENCH ISOL...

IC STRUCTURE INCLUDING POROUS SEMICONDUCTOR LAYER UNDER TRENCH ISOL...

TRANSISTOR WITH AIR GAP UNDER RAISED SOURCE/DRAIN REGION IN BULK SE...

EFUSE INSIDE AND GATE STRUCTURE ON TRIPLE-WELL REGION

BULK SUBSTRATES WITH A SELF-ALIGNED BURIED POLYCRYSTALLINE LAYER

GATE CONTACTS WITH AIRGAP ISOLATION

PHOTODETECTOR WITH BURIED AIRGAP REFLECTORS