Steven W. Johnston

Person

Portland, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Forming a copper diffusion barrier
- Patent number 8,227,335
- Issue date Jul 24, 2012
- Intel Corporation
- Steven W. Johnston
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a bottomless via
- Patent number 7,694,413
- Issue date Apr 13, 2010
- Intel Corporation
- Steven W. Johnston
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Atomic layer deposited tantalum containing adhesion layer
- Patent number 7,605,469
- Issue date Oct 20, 2009
- Intel Corporation
- Steven W. Johnston
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Atomic layer deposited tantalum containing adhesion layer
- Patent number 7,601,637
- Issue date Oct 13, 2009
- Intel Corporation
- Steven W. Johnston
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Amine-free deposition of metal-nitride films
- Patent number 7,550,385
- Issue date Jun 23, 2009
- Intel Corporation
- Adrien R. Lavoie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Noble metal barrier and seed layer for semiconductors
- Patent number 7,459,392
- Issue date Dec 2, 2008
- Intel Corporation
- Steven W. Johnston
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Alloyed underlayer for microelectronic interconnects
- Patent number 7,435,679
- Issue date Oct 14, 2008
- Intel Corporation
- Steven W. Johnston
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Post polish anneal of atomic layer deposition barrier layers
- Patent number 7,335,587
- Issue date Feb 26, 2008
- Intel Corporation
- Steven W. Johnston
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming a copper diffusion barrier
- Patent number 7,279,423
- Issue date Oct 9, 2007
- Intel Corporation
- Steven W. Johnston
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low k ILD layer with a hydrophilic portion
- Patent number 7,241,706
- Issue date Jul 10, 2007
- Intel Corporation
- Steven W. Johnston
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Organometallic precursors for the chemical phase deposition of meta...
- Patent number 7,220,671
- Issue date May 22, 2007
- Intel Corporation
- Harsono Simka
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Densifying a relatively porous material
- Patent number 7,071,126
- Issue date Jul 4, 2006
- Intel Corporation
- Steven W. Johnston
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plating a conductive material on a dielectric material
- Patent number 6,867,473
- Issue date Mar 15, 2005
- Intel Corporation
- Michael D. Goodner
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Plating a conductive material on a dielectric material
- Patent number 6,682,989
- Issue date Jan 27, 2004
- Intel Corporation
- Michael D. Goodner
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATING A BOTTOMLESS VIA TO PROMOTE ADSORPTION OF ANTISUPPRESSO...
- Publication number 20100164108
- Publication date Jul 1, 2010
- Steven W. Johnston
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
Atomic layer deposited tantalum containing adhesion layer
- Publication number 20090155998
- Publication date Jun 18, 2009
- Steven W. Johnston
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrating a bottomless via to promote adsorption of antisuppresso...
- Publication number 20080000678
- Publication date Jan 3, 2008
- Steven W. Johnston
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
Forming a copper diffusion barrier
- Publication number 20070298608
- Publication date Dec 27, 2007
- Steven W. Johnston
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Amine-free deposition of metal-nitride films
- Publication number 20070075427
- Publication date Apr 5, 2007
- Adrien R. Lavoie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Post polish anneal of atomic layer deposition barrier layers
- Publication number 20070004230
- Publication date Jan 4, 2007
- Steven W. Johnston
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for adhesion and deposition of metal films which provide a b...
- Publication number 20060286800
- Publication date Dec 21, 2006
- Juan E. Dominguez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Organometallic precursors for the chemical phase deposition of meta...
- Publication number 20060223300
- Publication date Oct 5, 2006
- Harsono Simka
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Nobel metal barrier and seed layer for semiconductors
- Publication number 20060220249
- Publication date Oct 5, 2006
- Steven W. Johnston
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Uniformity in batch spray processing using independent cassette rot...
- Publication number 20060131276
- Publication date Jun 22, 2006
- Steven W. Johnston
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Alloyed underlayer for microelectronic interconnects
- Publication number 20060118968
- Publication date Jun 8, 2006
- Steven W. Johnston
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Forming a combined copper diffusion barrier and seed layer
- Publication number 20060063379
- Publication date Mar 23, 2006
- Thomas S. Dory
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low k ILD layer with a hydrophilic portion
- Publication number 20060057838
- Publication date Mar 16, 2006
- Steven W. Johnston
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Atomic layer deposited tantalum containing adhesion layer
- Publication number 20060003581
- Publication date Jan 5, 2006
- Steven W. Johnston
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Densifying a relatively porous material
- Publication number 20050181631
- Publication date Aug 18, 2005
- Steven W. Johnston
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Densifying a relatively porous material
- Publication number 20040229452
- Publication date Nov 18, 2004
- Steven W. Johnston
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Plating a conductive material on a dielectric material
- Publication number 20040104483
- Publication date Jun 3, 2004
- Michael D. Goodner
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Forming a copper diffusion barrier
- Publication number 20040084773
- Publication date May 6, 2004
- Steven W. Johnston
- H01 - BASIC ELECTRIC ELEMENTS

Steven W. Johnston

Person

Patents Grantslast 30 patents

Forming a copper diffusion barrier

Method of making a bottomless via

Atomic layer deposited tantalum containing adhesion layer

Atomic layer deposited tantalum containing adhesion layer

Amine-free deposition of metal-nitride films

Noble metal barrier and seed layer for semiconductors

Alloyed underlayer for microelectronic interconnects

Post polish anneal of atomic layer deposition barrier layers

Forming a copper diffusion barrier

Low k ILD layer with a hydrophilic portion

Organometallic precursors for the chemical phase deposition of meta...

Densifying a relatively porous material

Plating a conductive material on a dielectric material

Plating a conductive material on a dielectric material

Patents Applicationslast 30 patents

INTEGRATING A BOTTOMLESS VIA TO PROMOTE ADSORPTION OF ANTISUPPRESSO...

Atomic layer deposited tantalum containing adhesion layer

Integrating a bottomless via to promote adsorption of antisuppresso...

Forming a copper diffusion barrier

Amine-free deposition of metal-nitride films

Post polish anneal of atomic layer deposition barrier layers

Method for adhesion and deposition of metal films which provide a b...

Organometallic precursors for the chemical phase deposition of meta...

Nobel metal barrier and seed layer for semiconductors

Uniformity in batch spray processing using independent cassette rot...

Alloyed underlayer for microelectronic interconnects

Forming a combined copper diffusion barrier and seed layer

Low k ILD layer with a hydrophilic portion

Atomic layer deposited tantalum containing adhesion layer

Densifying a relatively porous material

Densifying a relatively porous material

Plating a conductive material on a dielectric material

Forming a copper diffusion barrier