Su-Cheng Liu

Person

Hsinchu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Reducing spacing between conductive features through implantation
- Patent number 12,112,977
- Issue date Oct 8, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuo-Ju Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor contact with reduced contact resistance
- Patent number 12,107,086
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Su-Hao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variable size fin structures
- Patent number 12,087,847
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Su-Hao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal loss prevention using implantation
- Patent number 12,068,195
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Li-Chieh Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doping for semiconductor device with conductive feature
- Patent number 12,015,055
- Issue date Jun 18, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Su-Hao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for forming the same
- Patent number 12,009,305
- Issue date Jun 11, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuo-Ju Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal layer protection during wet etching
- Patent number 11,984,491
- Issue date May 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuo-Ju Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and methods of forming the same
- Patent number 11,973,027
- Issue date Apr 30, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Pei-Yu Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain structure
- Patent number 11,955,553
- Issue date Apr 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Su-Hao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with doped via plug
- Patent number 11,908,740
- Issue date Feb 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tung-Po Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a FinFET by implanting a dielectric with a...
- Patent number 11,901,455
- Issue date Feb 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Su-Hao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 11,862,694
- Issue date Jan 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuo-Ju Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Melt anneal source and drain regions
- Patent number 11,855,146
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Su-Hao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sacrificial layer for semiconductor process
- Patent number 11,848,361
- Issue date Dec 19, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsan-Chun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with connecting structure having a doped layer...
- Patent number 11,791,204
- Issue date Oct 17, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuo-Ju Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deposition window enlargement
- Patent number 11,742,210
- Issue date Aug 29, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Han Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doping for semiconductor device with conductive feature
- Patent number 11,742,386
- Issue date Aug 29, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Su-Hao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal loss prevention using implantation
- Patent number 11,710,659
- Issue date Jul 25, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Li-Chieh Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor contacts and methods of forming the same
- Patent number 11,695,042
- Issue date Jul 4, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei-Ting Chien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for forming the same
- Patent number 11,652,053
- Issue date May 16, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuo-Ju Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 11,646,377
- Issue date May 9, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei-Ting Chien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing spacing between conductive features through implantation
- Patent number 11,615,982
- Issue date Mar 28, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuo-Ju Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain structure
- Patent number 11,594,636
- Issue date Feb 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Su-Hao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for making multi-gate transistors and resulting structures
- Patent number 11,532,485
- Issue date Dec 20, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Su-Hao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Melting laser anneal of epitaxy regions
- Patent number 11,532,516
- Issue date Dec 20, 2022
- Taiwan Semiconductor Manufacturing Company Ltd.
- Su-Hao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with doped via plug
- Patent number 11,515,206
- Issue date Nov 29, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tung-Po Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bottom lateral expansion of contact plugs through implantation
- Patent number 11,502,000
- Issue date Nov 15, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Han Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a contact plug with an air gap spacer
- Patent number 11,456,383
- Issue date Sep 27, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Su-Hao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doping for semiconductor device with conductive feature
- Patent number 11,450,741
- Issue date Sep 20, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Su-Hao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variable size fin structures
- Patent number 11,380,782
- Issue date Jul 5, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Su-Hao Liu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
VARIABLE SIZE FIN STRUCTURES
- Publication number 20240363736
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Su-Hao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING SPACING BETWEEN CONDUCTIVE FEATURES THROUGH IMPLANTATION
- Publication number 20240363399
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuo-Ju Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20240321751
- Publication date Sep 26, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuo-Ju Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING SEMICONDUCTOR DEVICE
- Publication number 20240274527
- Publication date Aug 15, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Pei-Yu Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Complementary Field Effect Transistors and Methods of Forming the Same
- Publication number 20240258387
- Publication date Aug 1, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Syuan Siao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL LAYER PROTECTION DURING WET ETCHING
- Publication number 20240250147
- Publication date Jul 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Ju Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20240154010
- Publication date May 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Han Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A FINFET BY IMPLANTING A DIELECTRIC WITH A...
- Publication number 20240145596
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Su-Hao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MELT ANNEAL SOURCE AND DRAIN REGIONS
- Publication number 20240088225
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Su-Hao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Sacrificial Layer for Semiconductor Process
- Publication number 20240072128
- Publication date Feb 29, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tsan-Chun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240055300
- Publication date Feb 15, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Ting CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240030312
- Publication date Jan 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Ju CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL LAYER PROTECTION DURING WET ETCHING
- Publication number 20230420540
- Publication date Dec 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Ju Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method
- Publication number 20230411474
- Publication date Dec 21, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuo-Ju Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE PROFILE MODULATION FOR SEMICONDUCTOR DEVICE
- Publication number 20230387251
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tien-Shun CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH CONNECTING STRUCTURE HAVING A DOPED LAYER...
- Publication number 20230369103
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuo-Ju Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEPOSITION WINDOW ENLARGEMENT
- Publication number 20230369055
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Meng-Han Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Doping for Semiconductor Device with Conductive Feature
- Publication number 20230352533
- Publication date Nov 2, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Su-Hao LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal Loss Prevention Using Implantation
- Publication number 20230317519
- Publication date Oct 5, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Li-Chieh Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20230282583
- Publication date Sep 7, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuo-Ju Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor Contacts and Methods of Forming the Same
- Publication number 20230282706
- Publication date Sep 7, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Ting Chien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Manufacture
- Publication number 20230268442
- Publication date Aug 24, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Ting Chien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Methods of Forming the Same
- Publication number 20230268423
- Publication date Aug 24, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tien-Shun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor Source/Drain Contacts and Methods of Forming the Same
- Publication number 20230261069
- Publication date Aug 17, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Meng-Han Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reducing Spacing Between Conductive Features Through Implantation
- Publication number 20230253243
- Publication date Aug 10, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuo-Ju Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Source/Drain Structure
- Publication number 20230197852
- Publication date Jun 22, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Su-Hao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH DOPED VIA PLUG
- Publication number 20230093608
- Publication date Mar 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tung-Po HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Contact Formation with Reduced Dopant Loss and Increased Dimensions
- Publication number 20230034803
- Publication date Feb 2, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Meng-Han Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR ION IMPLANTATION UNIFORMITY CONTROL
- Publication number 20230016619
- Publication date Jan 19, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tien-Shun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices and Methods of Manufacture
- Publication number 20220406655
- Publication date Dec 22, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuo-Ju Chen
- H01 - BASIC ELECTRIC ELEMENTS

Su-Cheng Liu

Person

Patents Grantslast 30 patents

Reducing spacing between conductive features through implantation

Field effect transistor contact with reduced contact resistance

Variable size fin structures

Metal loss prevention using implantation

Doping for semiconductor device with conductive feature

Semiconductor device and method for forming the same

Metal layer protection during wet etching

Semiconductor device and methods of forming the same

Source/drain structure

Semiconductor structure with doped via plug

Method of manufacturing a FinFET by implanting a dielectric with a...

Semiconductor device and method

Melt anneal source and drain regions

Sacrificial layer for semiconductor process

Semiconductor device with connecting structure having a doped layer...

Deposition window enlargement

Doping for semiconductor device with conductive feature

Metal loss prevention using implantation

Transistor contacts and methods of forming the same

Semiconductor device and method for forming the same

Semiconductor device and method of manufacture

Reducing spacing between conductive features through implantation

Source/drain structure

Process for making multi-gate transistors and resulting structures

Melting laser anneal of epitaxy regions

Semiconductor structure with doped via plug

Bottom lateral expansion of contact plugs through implantation

Semiconductor device having a contact plug with an air gap spacer

Doping for semiconductor device with conductive feature

Variable size fin structures

Patents Applicationslast 30 patents

VARIABLE SIZE FIN STRUCTURES

REDUCING SPACING BETWEEN CONDUCTIVE FEATURES THROUGH IMPLANTATION

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

METHODS OF FORMING SEMICONDUCTOR DEVICE

Complementary Field Effect Transistors and Methods of Forming the Same

METAL LAYER PROTECTION DURING WET ETCHING

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

METHOD OF MANUFACTURING A FINFET BY IMPLANTING A DIELECTRIC WITH A...

MELT ANNEAL SOURCE AND DRAIN REGIONS

Sacrificial Layer for Semiconductor Process

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

METAL LAYER PROTECTION DURING WET ETCHING

Semiconductor Device and Method

GATE PROFILE MODULATION FOR SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE WITH CONNECTING STRUCTURE HAVING A DOPED LAYER...

DEPOSITION WINDOW ENLARGEMENT

Doping for Semiconductor Device with Conductive Feature

Metal Loss Prevention Using Implantation

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

Transistor Contacts and Methods of Forming the Same

Semiconductor Device and Method of Manufacture

Semiconductor Device and Methods of Forming the Same

Transistor Source/Drain Contacts and Methods of Forming the Same

Reducing Spacing Between Conductive Features Through Implantation

Source/Drain Structure

SEMICONDUCTOR STRUCTURE WITH DOPED VIA PLUG

Contact Formation with Reduced Dopant Loss and Increased Dimensions

METHOD FOR ION IMPLANTATION UNIFORMITY CONTROL

Semiconductor Devices and Methods of Manufacture