Subhadeep Kal

Person

Albany, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Selective and isotropic etch of silicon over silicon-germanium allo...
- Patent number 12,272,558
- Issue date Apr 8, 2025
- Tokyo Electron Limited
- Matthew Flaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate processing with material modification and removal
- Patent number 12,261,054
- Issue date Mar 25, 2025
- Tokyo Electron Limited
- Ivo Otto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate processing with selective etching
- Patent number 12,261,053
- Issue date Mar 25, 2025
- Tokyo Electron Limited
- Ivo Otto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gas phase etch with controllable etch selectivity of metals
- Patent number 11,715,643
- Issue date Aug 1, 2023
- Tokyo Electron Limited
- Subhadeep Kal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D complementary metal oxide semiconductor (CMOS) device and method...
- Patent number 11,631,671
- Issue date Apr 18, 2023
- Tokyo Electron Limited
- H. Jim Fulford
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for EUV inverse patterning in processing of microelectronic...
- Patent number 11,557,479
- Issue date Jan 17, 2023
- Tokyo Electron Limited
- Eric Chih-Fang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gas phase etch with controllable etch selectivity of Si-containing...
- Patent number 11,538,691
- Issue date Dec 27, 2022
- Tokyo Electron Limited
- Subhadeep Kal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor apparatus having stacked gates and method of manufact...
- Patent number 11,444,082
- Issue date Sep 13, 2022
- Tokyo Electron Limited
- Jeffrey Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming a semiconductor feature using atomic layer etch
- Patent number 11,424,123
- Issue date Aug 23, 2022
- Tokyo Electron Limited
- Eric Chih-Fang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gas phase etching system and method
- Patent number 11,380,554
- Issue date Jul 5, 2022
- Tokyo Electron Limited
- Subhadeep Kal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reverse contact and silicide process for three-dimensional semicond...
- Patent number 11,322,401
- Issue date May 3, 2022
- Tokyo Electron Limited
- Jeffrey Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-plasma etch of titanium-containing material layers with tunable...
- Patent number 11,322,350
- Issue date May 3, 2022
- Tokyo Electron Limited
- Daisuke Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reverse contact and silicide process for three-dimensional logic de...
- Patent number 11,264,274
- Issue date Mar 1, 2022
- Tokyo Electron Limited
- Jeffrey Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Critical dimension trimming method designed to minimize line width...
- Patent number 11,227,767
- Issue date Jan 18, 2022
- Tokyo Electron Limited
- Angelique Raley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for controlling transistor delay of nanowire or nanosheet tr...
- Patent number 10,991,626
- Issue date Apr 27, 2021
- Tokyo Electron Limited
- Jeffrey Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gas phase etch with controllable etch selectivity of Si-containing...
- Patent number 10,971,372
- Issue date Apr 6, 2021
- Tokyo Electron Limited
- Subhadeep Kal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gas phase etch with controllable etch selectivity of silicon-german...
- Patent number 10,923,356
- Issue date Feb 16, 2021
- Tokyo Electron Limited
- Subhadeep Kal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor apparatus having stacked gates and method of manufact...
- Patent number 10,833,078
- Issue date Nov 10, 2020
- Tokyo Electron Limited
- Jeffrey Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for controlling transistor delay of nanowire or nanosheet tr...
- Patent number 10,714,391
- Issue date Jul 14, 2020
- Tokyo Electron Limited
- Jeffrey Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for incorporating multiple channel materials in a compliment...
- Patent number 10,685,887
- Issue date Jun 16, 2020
- Tokyo Electron Limited
- Jeffrey Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gas phase etching system and method
- Patent number 10,580,660
- Issue date Mar 3, 2020
- Tokyo Electron Limited
- Subhadeep Kal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating NFET and PFET nanowire devices
- Patent number 10,573,564
- Issue date Feb 25, 2020
- Tokyo Electron Limited
- Aelan Mosden
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Selective deposition with surface treatment
- Patent number 10,378,105
- Issue date Aug 13, 2019
- Tokyo Electron Limited
- Kai-Hung Yu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Three-dimensional semiconductor device and method of fabrication
- Patent number 9,997,598
- Issue date Jun 12, 2018
- Tokyo Electron Limited
- Jeffrey Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isotropic silicon and silicon-germanium etching with tunable select...
- Patent number 9,984,890
- Issue date May 29, 2018
- Tokyo Electron Limited
- Subhadeep Kal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for selective spacer etch for multi-patterning sc...
- Patent number 9,748,110
- Issue date Aug 29, 2017
- Tokyo Electron Limited
- Subhadeep Kal
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Etch Selectivity Modulation by Fluorocarbon Treatment
- Publication number 20250069896
- Publication date Feb 27, 2025
- TOKYO ELECTRON LIMITED
- Ivo Otto IV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FULLY SELF-ALIGNED VIA WITH GRAPHENE CAP
- Publication number 20250054809
- Publication date Feb 13, 2025
- TOKYO ELECTRON LIMITED
- Kandabara Tapily
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-PLANAR TRANSISTOR STRUCTURES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20240405022
- Publication date Dec 5, 2024
- TOKYO ELECTRON LIMITED
- Eric Chih-Fang LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF SELF-ALIGNED DIELECTRIC WALL FORMATION FOR FORKSHEET APPL...
- Publication number 20240304500
- Publication date Sep 12, 2024
- TOKYO ELECTRON LIMITED
- Eric Chih-Fang LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE GAS PHASE ETCH OF SILICON GERMANIUM ALLOYS
- Publication number 20240128088
- Publication date Apr 18, 2024
- TOKYO ELECTRON LIMITED
- Toshiki KANAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SURFACE MODIFICATION TO ACHIEVE SELECTIVE ISOTROPIC ETCH
- Publication number 20240096639
- Publication date Mar 21, 2024
- TOKYO ELECTRON LIMITED
- Jonathan HOLLIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE PROCESSING WITH MATERIAL MODIFICATION AND REMOVAL
- Publication number 20240055270
- Publication date Feb 15, 2024
- TOKYO ELECTRON LIMITED
- Ivo Otto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE PROCESSING WITH SELECTIVE ETCHING
- Publication number 20240055268
- Publication date Feb 15, 2024
- TOKYO ELECTRON LIMITED
- Ivo Otto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE AND ISOTROPIC ETCH OF SILICON OVER SILICON-GERMANIUM ALLO...
- Publication number 20230360921
- Publication date Nov 9, 2023
- TOKYO ELECTRON LIMITED
- Matthew FLAUGH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED METHOD FOR VERTICAL RECESS FOR 3D DEVICE INTEGRATION
- Publication number 20230036597
- Publication date Feb 2, 2023
- TOKYO ELECTRON LIMITED
- Jeffrey SMITH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE HAVING STACKED GATES AND METHOD OF MANUFACT...
- Publication number 20220416048
- Publication date Dec 29, 2022
- TOKYO ELECTRON LIMITED
- Jeffrey SMITH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR EUV INVERSE PATTERNING IN PROCESSING OF MICROELECTRONIC...
- Publication number 20210296125
- Publication date Sep 23, 2021
- TOKYO ELECTRON LIMITED
- Eric Chih-Fang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING A SEMICONDUCTOR FEATURE USING ATOMIC LAYER ETCH
- Publication number 20210265164
- Publication date Aug 26, 2021
- TOKYO ELECTRON LIMITED
- Eric Chih-Fang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAS PHASE ETCH WITH CONTROLLABLE ETCH SELECTIVITY OF Si-CONTAINING...
- Publication number 20210217628
- Publication date Jul 15, 2021
- TOKYO ELECTRON LIMITED
- Subhadeep Kal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) DEVICE AND METHOD...
- Publication number 20210202481
- Publication date Jul 1, 2021
- TOKYO ELECTRON LIMITED
- H. Jim FULFORD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REVERSE CONTACT AND SILICIDE PROCESS FOR THREE-DIMENSIONAL SEMICOND...
- Publication number 20210098294
- Publication date Apr 1, 2021
- TOKYO ELECTRON LIMITED
- Jeffrey SMITH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REVERSE CONTACT AND SILICIDE PROCESS FOR THREE-DIMENSIONAL LOGIC DE...
- Publication number 20210098306
- Publication date Apr 1, 2021
- TOKYO ELECTRON LIMITED
- Jeffrey Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-PLASMA ETCH OF TITANIUM-CONTAINING MATERIAL LAYERS WITH TUNABLE...
- Publication number 20210057213
- Publication date Feb 25, 2021
- TOKYO ELECTRON LIMITED
- Daisuke Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR APPARATUS HAVING STACKED GATES AND METHOD OF MANUFACT...
- Publication number 20210028169
- Publication date Jan 28, 2021
- TOKYO ELECTRON LIMITED
- Jeffrey SMITH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAS PHASE ETCH WITH CONTROLLABLE ETCH SELECTIVITY OF METALS
- Publication number 20210020454
- Publication date Jan 21, 2021
- TOKYO ELECTRON LIMITED
- Subhadeep Kal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR CONTROLLING TRANSISTOR DELAY OF NANOWIRE OR NANOSHEET TR...
- Publication number 20200303256
- Publication date Sep 24, 2020
- TOKYO ELECTRON LIMITED
- Jeffrey SMITH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAS PHASE ETCHING SYSTEM AND METHOD
- Publication number 20200176266
- Publication date Jun 4, 2020
- TOKYO ELECTRON LIMITED
- Subhadeep Kal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAS PHASE ETCH WITH CONTROLLABLE ETCH SELECTIVITY OF SILICON-GERMAN...
- Publication number 20200027741
- Publication date Jan 23, 2020
- TOKYO ELECTRON LIMITED
- Subhadeep Kal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Critical Dimension Trimming Method Designed To Minimize Line Width...
- Publication number 20190341257
- Publication date Nov 7, 2019
- TOKYO ELECTRON LIMITED
- Angelique Raley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR CONTROLLING TRANSISTOR DELAY OF NANOWIRE OR NANOSHEET TR...
- Publication number 20190172751
- Publication date Jun 6, 2019
- TOKYO ELECTRON LIMITED
- Jeffrey SMITH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR INCORPORATING MULTIPLE CHANNEL MATERIALS IN A COMPLIMENT...
- Publication number 20190172755
- Publication date Jun 6, 2019
- TOKYO ELECTRON LIMITED
- Jeffrey SMITH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR APPARATUS HAVING STACKED GATES AND METHOD OF MANUFACT...
- Publication number 20190172828
- Publication date Jun 6, 2019
- TOKYO ELECTRON LIMITED
- Jeffrey SMITH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING NFET AND PFET NANOWIRE DEVICES
- Publication number 20180315665
- Publication date Nov 1, 2018
- TOKYO ELECTRON LIMITED
- Aelan Mosden
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATION
- Publication number 20180040695
- Publication date Feb 8, 2018
- Jeffrey Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE DEPOSITION WITH SURFACE TREATMENT
- Publication number 20170342553
- Publication date Nov 30, 2017
- TOKYO ELECTRON LIMITED
- Kai-Hung Yu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Subhadeep Kal

Person

Patents Grantslast 30 patents

Selective and isotropic etch of silicon over silicon-germanium allo...

Substrate processing with material modification and removal

Substrate processing with selective etching

Gas phase etch with controllable etch selectivity of metals

3D complementary metal oxide semiconductor (CMOS) device and method...

Methods for EUV inverse patterning in processing of microelectronic...

Gas phase etch with controllable etch selectivity of Si-containing...

Semiconductor apparatus having stacked gates and method of manufact...

Forming a semiconductor feature using atomic layer etch

Gas phase etching system and method

Reverse contact and silicide process for three-dimensional semicond...

Non-plasma etch of titanium-containing material layers with tunable...

Reverse contact and silicide process for three-dimensional logic de...

Critical dimension trimming method designed to minimize line width...

Method for controlling transistor delay of nanowire or nanosheet tr...

Gas phase etch with controllable etch selectivity of Si-containing...

Gas phase etch with controllable etch selectivity of silicon-german...

Semiconductor apparatus having stacked gates and method of manufact...

Method for controlling transistor delay of nanowire or nanosheet tr...

Method for incorporating multiple channel materials in a compliment...

Gas phase etching system and method

Method for fabricating NFET and PFET nanowire devices

Selective deposition with surface treatment

Three-dimensional semiconductor device and method of fabrication

Isotropic silicon and silicon-germanium etching with tunable select...

Method and system for selective spacer etch for multi-patterning sc...

Patents Applicationslast 30 patents

Etch Selectivity Modulation by Fluorocarbon Treatment

FULLY SELF-ALIGNED VIA WITH GRAPHENE CAP

NON-PLANAR TRANSISTOR STRUCTURES AND METHODS OF MANUFACTURING THEREOF

METHOD OF SELF-ALIGNED DIELECTRIC WALL FORMATION FOR FORKSHEET APPL...

SELECTIVE GAS PHASE ETCH OF SILICON GERMANIUM ALLOYS

SURFACE MODIFICATION TO ACHIEVE SELECTIVE ISOTROPIC ETCH

SUBSTRATE PROCESSING WITH MATERIAL MODIFICATION AND REMOVAL

SUBSTRATE PROCESSING WITH SELECTIVE ETCHING

SELECTIVE AND ISOTROPIC ETCH OF SILICON OVER SILICON-GERMANIUM ALLO...

SELF-ALIGNED METHOD FOR VERTICAL RECESS FOR 3D DEVICE INTEGRATION

SEMICONDUCTOR STRUCTURE HAVING STACKED GATES AND METHOD OF MANUFACT...

METHODS FOR EUV INVERSE PATTERNING IN PROCESSING OF MICROELECTRONIC...

FORMING A SEMICONDUCTOR FEATURE USING ATOMIC LAYER ETCH

GAS PHASE ETCH WITH CONTROLLABLE ETCH SELECTIVITY OF Si-CONTAINING...

3D COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) DEVICE AND METHOD...

REVERSE CONTACT AND SILICIDE PROCESS FOR THREE-DIMENSIONAL SEMICOND...

REVERSE CONTACT AND SILICIDE PROCESS FOR THREE-DIMENSIONAL LOGIC DE...

NON-PLASMA ETCH OF TITANIUM-CONTAINING MATERIAL LAYERS WITH TUNABLE...

SEMICONDUCTOR APPARATUS HAVING STACKED GATES AND METHOD OF MANUFACT...

GAS PHASE ETCH WITH CONTROLLABLE ETCH SELECTIVITY OF METALS

METHOD FOR CONTROLLING TRANSISTOR DELAY OF NANOWIRE OR NANOSHEET TR...

GAS PHASE ETCHING SYSTEM AND METHOD

GAS PHASE ETCH WITH CONTROLLABLE ETCH SELECTIVITY OF SILICON-GERMAN...

Critical Dimension Trimming Method Designed To Minimize Line Width...

METHOD FOR CONTROLLING TRANSISTOR DELAY OF NANOWIRE OR NANOSHEET TR...

METHOD FOR INCORPORATING MULTIPLE CHANNEL MATERIALS IN A COMPLIMENT...

SEMICONDUCTOR APPARATUS HAVING STACKED GATES AND METHOD OF MANUFACT...

METHOD FOR FABRICATING NFET AND PFET NANOWIRE DEVICES

THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATION

SELECTIVE DEPOSITION WITH SURFACE TREATMENT