Subrina RAFIQUE

Person

Hillsboro, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Source or drain structures for germanium N-channel devices
- Patent number 11,973,143
- Issue date Apr 30, 2024
- Intel Corporation
- Ryan Keech
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High aspect ratio source or drain structures with abrupt dopant pro...
- Patent number 11,804,523
- Issue date Oct 31, 2023
- Intel Corporation
- Ryan Keech
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CONTACT RESISTANCE REDUCTION IN TRANSISTOR DEVICES WITH METALLIZATI...
- Publication number 20240347610
- Publication date Oct 17, 2024
- Intel Corporation
- Koustav GANGULY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE OR DRAIN STRUCTURES FOR GERMANIUM N-CHANNEL DEVICES
- Publication number 20240258427
- Publication date Aug 1, 2024
- Intel Corporation
- Ryan KEECH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE OR DRAIN STRUCTURES WITH PHOSPHOROUS AND ARSENIC DOPANTS
- Publication number 20240063274
- Publication date Feb 22, 2024
- Intel Corporation
- Patrick WALLACE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ASPECT RATIO SOURCE OR DRAIN STRUCTURES WITH ABRUPT DOPANT PRO...
- Publication number 20240014268
- Publication date Jan 11, 2024
- Intel Corporation
- Ryan KEECH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED EMBEDDED SOURCE AND DRAIN CONTACTS
- Publication number 20230420528
- Publication date Dec 28, 2023
- Intel Corporation
- Nitesh Kumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE AND DRAIN CONTACTS FORMED USING SACRIFICIAL REGIONS OF SOURC...
- Publication number 20230402513
- Publication date Dec 14, 2023
- Intel Corporation
- Rohit Galatage
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE OR DRAIN STRUCTURES WITH SELECTIVE SILICIDE CONTACTS THEREON
- Publication number 20230317789
- Publication date Oct 5, 2023
- Intel Corporation
- Dan S. LAVRIC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE OR DRAIN METALLIZATION PRIOR TO CONTACT FORMATION IN STACKED...
- Publication number 20230197777
- Publication date Jun 22, 2023
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH REDUCED EPITAXIAL SOURCE/DRAIN SPAN VIA ETCH-BACK...
- Publication number 20230095191
- Publication date Mar 30, 2023
- Intel Corporation
- Koustav Ganguly
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT RESISTANCE REDUCTION IN TRANSISTOR DEVICES WITH METALLIZATI...
- Publication number 20210408246
- Publication date Dec 30, 2021
- Intel Corporation
- Koustav GANGULY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ASPECT RATION SOURCE OR DRAIN STRUCTURES WITH ABRUPT DOPANT PR...
- Publication number 20210091181
- Publication date Mar 25, 2021
- Intel Corporation
- Ryan KEECH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE OR DRAIN STRUCTURES FOR GERMANIUM N-CHANNEL DEVICES
- Publication number 20200313001
- Publication date Oct 1, 2020
- Intel Corporation
- Ryan KEECH
- H01 - BASIC ELECTRIC ELEMENTS

Subrina RAFIQUE

Person

Patents Grantslast 30 patents

Source or drain structures for germanium N-channel devices

High aspect ratio source or drain structures with abrupt dopant pro...

Patents Applicationslast 30 patents

CONTACT RESISTANCE REDUCTION IN TRANSISTOR DEVICES WITH METALLIZATI...

SOURCE OR DRAIN STRUCTURES FOR GERMANIUM N-CHANNEL DEVICES

SOURCE OR DRAIN STRUCTURES WITH PHOSPHOROUS AND ARSENIC DOPANTS

HIGH ASPECT RATIO SOURCE OR DRAIN STRUCTURES WITH ABRUPT DOPANT PRO...

SELF-ALIGNED EMBEDDED SOURCE AND DRAIN CONTACTS

SOURCE AND DRAIN CONTACTS FORMED USING SACRIFICIAL REGIONS OF SOURC...

SOURCE OR DRAIN STRUCTURES WITH SELECTIVE SILICIDE CONTACTS THEREON

SOURCE OR DRAIN METALLIZATION PRIOR TO CONTACT FORMATION IN STACKED...

TRANSISTORS WITH REDUCED EPITAXIAL SOURCE/DRAIN SPAN VIA ETCH-BACK...

CONTACT RESISTANCE REDUCTION IN TRANSISTOR DEVICES WITH METALLIZATI...

HIGH ASPECT RATION SOURCE OR DRAIN STRUCTURES WITH ABRUPT DOPANT PR...

SOURCE OR DRAIN STRUCTURES FOR GERMANIUM N-CHANNEL DEVICES