Sudarat Lee

Person

Hillsboro, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Ribbon or wire transistor stack with selective dipole threshold vol...
- Patent number 12,183,739
- Issue date Dec 31, 2024
- Intel Corporation
- Nicole Thomas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transition metal dichalcogenide nanowires and methods of fabrication
- Patent number 12,176,388
- Issue date Dec 24, 2024
- Intel Corporation
- Kevin O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transition metal dichalcogenide (TMD) layer stack for transistor ap...
- Patent number 12,125,895
- Issue date Oct 22, 2024
- Intel Corporation
- Chelsey Dorow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
TMD inverted nanowire integration
- Patent number 11,935,956
- Issue date Mar 19, 2024
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TECHNOLOGIES FOR BARRIER LAYERS IN PEROVSKITE TRANSISTORS
- Publication number 20250006841
- Publication date Jan 2, 2025
- Intel Corporation
- Arnab Sen Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEEDED GROWTH FOR 2D NANORIBBON TRANSISTORS
- Publication number 20240222428
- Publication date Jul 4, 2024
- Intel Corporation
- Chelsey Dorow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BEOL CONTACT METALS FOR 2D TRANSISTORS
- Publication number 20240222461
- Publication date Jul 4, 2024
- Intel Corporation
- Ande Kitamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURES HAVING A DOPING LAYER ON TRANSITION METAL DIC...
- Publication number 20240222482
- Publication date Jul 4, 2024
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PASSIVATION OF CRYSTALLINE SUBSTRATE FOR METAL CHALCOGEN MATERIAL S...
- Publication number 20240222113
- Publication date Jul 4, 2024
- Intel Corporation
- Carl H. Naylor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
2D NANORIBBONS UTILIZING SILICON SCAFFOLDING
- Publication number 20240222483
- Publication date Jul 4, 2024
- Intel Corporation
- Carl H. Naylor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE GATE OXIDE FORMATION ON 2D MATERIAL BASED TRANSISTOR DEVICES
- Publication number 20240222441
- Publication date Jul 4, 2024
- Intel Corporation
- Mahmut Sami Kavrik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TMD INVERTED NANOWIRE INTEGRATION
- Publication number 20240186416
- Publication date Jun 6, 2024
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNOLOGIES FOR ATOMIC LAYER DEPOSITION FOR FERROELECTRIC TRANSISTORS
- Publication number 20240120415
- Publication date Apr 11, 2024
- Intel Corporation
- Scott B. Clendenning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNOLOGIES FOR TRANSISTORS WITH A THIN-FILM FERROELECTRIC
- Publication number 20240113220
- Publication date Apr 4, 2024
- Intel Corporation
- Arnab Sen Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACK-END-OF-LINE 2D TRANSISTOR
- Publication number 20240006521
- Publication date Jan 4, 2024
- Intel Corporation
- Chia-Ching LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT ARCHITECTURE FOR 2D STACKED NANORIBBON TRANSISTOR
- Publication number 20240006484
- Publication date Jan 4, 2024
- Intel Corporation
- Ashish Verma PENUMATCHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ALTERNATING SACRIFICIAL LAYER MATERIALS FOR MECHANICALLY STABLE 2D...
- Publication number 20240006481
- Publication date Jan 4, 2024
- Intel Corporation
- Chelsey DOROW
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACK-END-OF-LINE 2D MEMORY CELL
- Publication number 20240008290
- Publication date Jan 4, 2024
- Intel Corporation
- Chia-Ching LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ASSEMBLED MONOLAYER ON A DIELECTRIC FOR TRANSITION METAL DICHA...
- Publication number 20230420510
- Publication date Dec 28, 2023
- Intel Corporation
- Carl H. NAYLOR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
2D LAYERED GATE OXIDE
- Publication number 20230420514
- Publication date Dec 28, 2023
- Intel Corporation
- Chelsey DOROW
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MICROELECTRONIC DIE WITH TWO DIMENSIONAL (2D) COMPLEMENTARY METAL O...
- Publication number 20230420364
- Publication date Dec 28, 2023
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED SINGLE CRYSTAL TRANSITION-METAL DICHALCOGENIDE USING SEEDED...
- Publication number 20230420511
- Publication date Dec 28, 2023
- Intel Corporation
- Carl H. NAYLOR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL INSULATOR METAL (MIM) CAPACITOR ARCHITECTURES
- Publication number 20230411278
- Publication date Dec 21, 2023
- Intel Corporation
- Chia-Ching LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-DIMENSIONAL PMOS DEVICES FOR PROVIDING CMOS IN BACK-END LAYERS...
- Publication number 20230411390
- Publication date Dec 21, 2023
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL INSULATOR METAL (MIM) CAPACITOR ARCHITECTURES
- Publication number 20230411443
- Publication date Dec 21, 2023
- Intel Corporation
- Kaan OGUZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LAYERED 2D SEMICONDUCTORS
- Publication number 20230317783
- Publication date Oct 5, 2023
- Intel Corporation
- Kirby MAXEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR DEVICES WITH STRONTIUM TITANATE INSULATOR LAYERS
- Publication number 20230253444
- Publication date Aug 10, 2023
- Intel Corporation
- Arnab Sen Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL CHALCOGENIDE TRANSISTORS WITH DEFECTED CHANNEL TRANSITION LAYER
- Publication number 20230197860
- Publication date Jun 22, 2023
- Intel Corporation
- Carl H. Naylor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED TRANSISTOR STRUCTURES WITH DIVERSE GATE MATERIALS
- Publication number 20230197728
- Publication date Jun 22, 2023
- Intel Corporation
- Nicole K. Thomas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THIN FILM TRANSISTORS HAVING CMOS FUNCTIONALITY INTEGRATED WITH 2D...
- Publication number 20230113614
- Publication date Apr 13, 2023
- Intel Corporation
- Kevin P. O'BRIEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES WITH GRAPHENE CONTACTS
- Publication number 20230102695
- Publication date Mar 30, 2023
- Intel Corporation
- Carl H. NAYLOR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED 2D CMOS WITH INTER METAL LAYERS
- Publication number 20230101760
- Publication date Mar 30, 2023
- Intel Corporation
- Kevin P. O'BRIEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THIN FILM TRANSISTORS HAVING MULTI-LAYER GATE DIELECTRIC STRUCTURES...
- Publication number 20230101370
- Publication date Mar 30, 2023
- Intel Corporation
- Sudarat LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR WITH AN ELECTRICALLY CONDUCTIVE LAYER COUPLED WITH A META...
- Publication number 20230098594
- Publication date Mar 30, 2023
- Intel Corporation
- Chia-Ching LIN
- H01 - BASIC ELECTRIC ELEMENTS

Sudarat Lee

Person

Patents Grantslast 30 patents

Ribbon or wire transistor stack with selective dipole threshold vol...

Transition metal dichalcogenide nanowires and methods of fabrication

Transition metal dichalcogenide (TMD) layer stack for transistor ap...

TMD inverted nanowire integration

Patents Applicationslast 30 patents

TECHNOLOGIES FOR BARRIER LAYERS IN PEROVSKITE TRANSISTORS

SEEDED GROWTH FOR 2D NANORIBBON TRANSISTORS

BEOL CONTACT METALS FOR 2D TRANSISTORS

TRANSISTOR STRUCTURES HAVING A DOPING LAYER ON TRANSITION METAL DIC...

PASSIVATION OF CRYSTALLINE SUBSTRATE FOR METAL CHALCOGEN MATERIAL S...

2D NANORIBBONS UTILIZING SILICON SCAFFOLDING

SELECTIVE GATE OXIDE FORMATION ON 2D MATERIAL BASED TRANSISTOR DEVICES

TMD INVERTED NANOWIRE INTEGRATION

TECHNOLOGIES FOR ATOMIC LAYER DEPOSITION FOR FERROELECTRIC TRANSISTORS

TECHNOLOGIES FOR TRANSISTORS WITH A THIN-FILM FERROELECTRIC

BACK-END-OF-LINE 2D TRANSISTOR

CONTACT ARCHITECTURE FOR 2D STACKED NANORIBBON TRANSISTOR

ALTERNATING SACRIFICIAL LAYER MATERIALS FOR MECHANICALLY STABLE 2D...

BACK-END-OF-LINE 2D MEMORY CELL

SELF-ASSEMBLED MONOLAYER ON A DIELECTRIC FOR TRANSITION METAL DICHA...

2D LAYERED GATE OXIDE

MICROELECTRONIC DIE WITH TWO DIMENSIONAL (2D) COMPLEMENTARY METAL O...

STACKED SINGLE CRYSTAL TRANSITION-METAL DICHALCOGENIDE USING SEEDED...

METAL INSULATOR METAL (MIM) CAPACITOR ARCHITECTURES

TWO-DIMENSIONAL PMOS DEVICES FOR PROVIDING CMOS IN BACK-END LAYERS...

METAL INSULATOR METAL (MIM) CAPACITOR ARCHITECTURES

LAYERED 2D SEMICONDUCTORS

CAPACITOR DEVICES WITH STRONTIUM TITANATE INSULATOR LAYERS

METAL CHALCOGENIDE TRANSISTORS WITH DEFECTED CHANNEL TRANSITION LAYER

STACKED TRANSISTOR STRUCTURES WITH DIVERSE GATE MATERIALS

THIN FILM TRANSISTORS HAVING CMOS FUNCTIONALITY INTEGRATED WITH 2D...

INTEGRATED CIRCUIT STRUCTURES WITH GRAPHENE CONTACTS

STACKED 2D CMOS WITH INTER METAL LAYERS

THIN FILM TRANSISTORS HAVING MULTI-LAYER GATE DIELECTRIC STRUCTURES...

CAPACITOR WITH AN ELECTRICALLY CONDUCTIVE LAYER COUPLED WITH A META...