Sudarshan Narayanan

Person

Framingham, MA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Field effect transistors with gate fins and method of making the same
- Patent number 12,015,084
- Issue date Jun 18, 2024
- SanDisk Technologies LLC
- Mitsuhiro Togo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors with gate fins and method of making the same
- Patent number 11,967,626
- Issue date Apr 23, 2024
- SanDisk Technologies LLC
- Mitsuhiro Togo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory with three dimensional stacked word line switches
- Patent number 11,943,922
- Issue date Mar 26, 2024
- Western Digital Technologies, Inc.
- Guangyuan Li
Information Patent Grant
IC structure with fin having subfin extents with different lateral...
- Patent number 11,545,575
- Issue date Jan 3, 2023
- GLOBALFOUNDRIES U.S. INC.
- Man Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-based laterally diffused structure having a gate with two adjac...
- Patent number 11,456,384
- Issue date Sep 27, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure providing charge controlled electronic fuse
- Patent number 11,387,353
- Issue date Jul 12, 2022
- GLOBALFOUNDRIES U.S. INC.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage diode finFET platform designs
- Patent number 11,164,978
- Issue date Nov 2, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
WORD LINE SWITCH GATE VOLTAGE AND WELL VOLTAGE SEPARATION
- Publication number 20250210108
- Publication date Jun 26, 2025
- Western Digital Technologies, Inc.
- Qinghua Zhao
- G11 - INFORMATION STORAGE
Information Patent Application
UNSELECT WORD LINE SWITCH BIAS SCHEME FOR NON-VOLATILE MEMORY APPAR...
- Publication number 20240386960
- Publication date Nov 21, 2024
- Western Digital Technologies, Inc.
- Mohan Dunga
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING OVERLYING THIN FILM TRAN...
- Publication number 20240387370
- Publication date Nov 21, 2024
- WESTERN DIGITAL TECHNOLOGIES, INC.,
- Satoru MAYUZUMI
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING PERIPHERAL CIRCUIT WITH...
- Publication number 20240371760
- Publication date Nov 7, 2024
- WESTERN DIGITAL TECHNOLOGIES, INC.,
- Satoru MAYUZUMI
- G11 - INFORMATION STORAGE
Information Patent Application
FIELD EFFECT TRANSISTORS WITH GATE FINS AND METHOD OF MAKING THE SAME
- Publication number 20230083560
- Publication date Mar 16, 2023
- SANDISK TECHNOLOGIES LLC
- Mitsuhiro TOGO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTORS WITH GATE FINS AND METHOD OF MAKING THE SAME
- Publication number 20230079098
- Publication date Mar 16, 2023
- SANDISK TECHNOLOGIES LLC
- Mitsuhiro TOGO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE WITH TWO ADJACENT METAL LAYERS IN GATE STRUCTURE
- Publication number 20220005952
- Publication date Jan 6, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IC STRUCTURE WITH FIN HAVING SUBFIN EXTENTS WITH DIFFERENT LATERAL...
- Publication number 20220005954
- Publication date Jan 6, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Man Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE PROVIDING CHARGE CONTROLLED ELECTRONIC FUSE
- Publication number 20210399116
- Publication date Dec 23, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-VOLTAGE DIODE FINFET PLATFORM DESIGNS
- Publication number 20210234052
- Publication date Jul 29, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS

Sudarshan Narayanan

Person

Patents Grantslast 30 patents

Field effect transistors with gate fins and method of making the same

Field effect transistors with gate fins and method of making the same

Non-volatile memory with three dimensional stacked word line switches

IC structure with fin having subfin extents with different lateral...

Fin-based laterally diffused structure having a gate with two adjac...

Structure providing charge controlled electronic fuse

High-voltage diode finFET platform designs

Patents Applicationslast 30 patents

WORD LINE SWITCH GATE VOLTAGE AND WELL VOLTAGE SEPARATION

UNSELECT WORD LINE SWITCH BIAS SCHEME FOR NON-VOLATILE MEMORY APPAR...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING OVERLYING THIN FILM TRAN...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING PERIPHERAL CIRCUIT WITH...

FIELD EFFECT TRANSISTORS WITH GATE FINS AND METHOD OF MAKING THE SAME

FIELD EFFECT TRANSISTORS WITH GATE FINS AND METHOD OF MAKING THE SAME

STRUCTURE WITH TWO ADJACENT METAL LAYERS IN GATE STRUCTURE

IC STRUCTURE WITH FIN HAVING SUBFIN EXTENTS WITH DIFFERENT LATERAL...

STRUCTURE PROVIDING CHARGE CONTROLLED ELECTRONIC FUSE

HIGH-VOLTAGE DIODE FINFET PLATFORM DESIGNS