Sue Crank

Person

Coppell, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Nickel alloy silicide including indium and a method of manufacture...
- Patent number 7,511,350
- Issue date Mar 31, 2009
- Texas Instruments Incorporated
- Peijun J. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nickel silicide including indium and a method of manufacture therefor
- Patent number 7,355,255
- Issue date Apr 8, 2008
- Texas Instruments Incorporated
- Peijun J. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nickel alloy silicide including indium and a method of manufacture...
- Patent number 7,344,985
- Issue date Mar 18, 2008
- Texas Instruments Incorporated
- Peijun J. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nickel silicide including indium and a method of manufacture therefor
- Patent number 7,211,516
- Issue date May 1, 2007
- Texas Instruments Incorporated
- Peijun J. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal silicide induced lateral excessive encroachment reduction by...
- Patent number 7,199,032
- Issue date Apr 3, 2007
- Texas Instruments Incorporated
- Duofeng Yue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Treatment of silicon prior to nickel silicide formation
- Patent number 7,132,365
- Issue date Nov 7, 2006
- Texas Instruments Incorporated
- Sue Ellen Crank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicide method for CMOS integrated circuits
- Patent number 7,029,967
- Issue date Apr 18, 2006
- Texas Instruments Incorporated
- Song Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for trench isolation of semiconductor devices
- Patent number 6,228,741
- Issue date May 8, 2001
- Texas Instruments Incorporated
- Shawn T. Walsh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit copper metallization process using a lift-off se...
- Patent number 5,316,974
- Issue date May 31, 1994
- Texas Instruments Incorporated
- Sue E. Crank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective etching of tungsten by remote and in situ plasma generation
- Patent number 4,874,723
- Issue date Oct 17, 1989
- Texas Instruments Incorporated
- Rhett B. Jucha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for etching tungsten
- Patent number 4,863,558
- Issue date Sep 5, 1989
- Texas Instruments Incorporated
- Rhett B. Jucha
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for etching tungsten
- Patent number 4,849,067
- Issue date Jul 18, 1989
- Texas Instruments Incorporated
- Rhett B. Jucha
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
Nickel Alloy Silicide Including Indium and a Method of Manufacture...
- Publication number 20080128837
- Publication date Jun 5, 2008
- TEXAS INSTRUMENTS INCORPORATED
- Peijun J. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nickel silicide including indium and a method of manufacture therefor
- Publication number 20070141840
- Publication date Jun 21, 2007
- TEXAS INSTRUMENTS INCORPORATED
- Peijun J. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NICKEL ALLOY SILICIDE INCLUDING INDIUM AND A METHOD OF MANUFACTURE...
- Publication number 20070049022
- Publication date Mar 1, 2007
- Texas Instruments, Incorporated
- Peijun J. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nickel silicide including indium and a method of manufacture therefor
- Publication number 20060223295
- Publication date Oct 5, 2006
- Texas Instruments, Incorporated
- Peijun J. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Treatment of silicon prior to nickel silicide formation
- Publication number 20060035463
- Publication date Feb 16, 2006
- TEXAS INSTRUMENTS INCORPORATED
- Sue Ellen Crank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal silicide induced lateral excessive encroachment reduction by...
- Publication number 20060024935
- Publication date Feb 2, 2006
- TEXAS INSTRUMENTS INCORPORATED
- Duofeng Yue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicide method for CMOS integrated circuits
- Publication number 20060019478
- Publication date Jan 26, 2006
- Song Zhao
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Nickel alloy silicide including indium and a method of manufacture...

Nickel silicide including indium and a method of manufacture therefor

Nickel alloy silicide including indium and a method of manufacture...

Nickel silicide including indium and a method of manufacture therefor

Metal silicide induced lateral excessive encroachment reduction by...

Treatment of silicon prior to nickel silicide formation

Silicide method for CMOS integrated circuits

Method for trench isolation of semiconductor devices

Integrated circuit copper metallization process using a lift-off se...

Selective etching of tungsten by remote and in situ plasma generation

Method for etching tungsten

Method for etching tungsten

Patents Applicationslast 30 patents

Nickel Alloy Silicide Including Indium and a Method of Manufacture...

Nickel silicide including indium and a method of manufacture therefor

NICKEL ALLOY SILICIDE INCLUDING INDIUM AND A METHOD OF MANUFACTURE...

Nickel silicide including indium and a method of manufacture therefor

Treatment of silicon prior to nickel silicide formation

Metal silicide induced lateral excessive encroachment reduction by...

Silicide method for CMOS integrated circuits