Sumio Ikegawa

Person

Musashino-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Magnetoresistive element and producing method thereof
- Patent number 8,878,321
- Issue date Nov 4, 2014
- Kabushiki Kaisha Toshiba
- Hisanori Aikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory element having an adjustment layer for reducing a l...
- Patent number 8,634,238
- Issue date Jan 21, 2014
- Kabushiki Kaisha Toshiba
- Masahiko Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory including a magnetoresistive element
- Patent number 8,530,987
- Issue date Sep 10, 2013
- Kabushiki Kaisha Toshiba
- Hisanori Aikawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive effect memory
- Patent number 8,472,242
- Issue date Jun 25, 2013
- Kabushiki Kaisha Toshiba
- Naoharu Shimomura
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive effect element and magnetic random access memory
- Patent number 8,378,437
- Issue date Feb 19, 2013
- Kabushiki Kaisha Toshiba
- Masahiko Nakayama
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magneto-resistive element
- Patent number 8,349,622
- Issue date Jan 8, 2013
- Kabushiki Kaisha Toshiba
- Sumio Ikegawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory
- Patent number 8,347,175
- Issue date Jan 1, 2013
- Kabushiki Kaisha Toshiba
- Sumio Ikegawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element and magnetic random access memory
- Patent number 8,279,663
- Issue date Oct 2, 2012
- Kabushiki Kaisha Toshiba
- Masahiko Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive effect device and magnetic memory
- Patent number 8,223,533
- Issue date Jul 17, 2012
- Kabushiki Kaisha Toshiba
- Jyunichi Ozeki
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 8,173,447
- Issue date May 8, 2012
- Kabushiki Kaisha Toshiba
- Tomomasa Ueda
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element
- Patent number 8,143,684
- Issue date Mar 27, 2012
- Kabushiki Kaisha Toshiba
- Makoto Nagamine
- G11 - INFORMATION STORAGE
Information Patent Grant
Data writing method for magnetoresistive effect element and magneti...
- Patent number 8,120,948
- Issue date Feb 21, 2012
- Kabushiki Kaisha Toshiba
- Masahiko Nakayama
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element and magnetic random access memory
- Patent number 8,014,193
- Issue date Sep 6, 2011
- Kabushiki Kaisha Toshiba
- Masahiko Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive element
- Patent number 8,009,465
- Issue date Aug 30, 2011
- Kabushiki Kaisha Toshiba
- Masahiko Nakayama
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element
- Patent number 7,898,846
- Issue date Mar 1, 2011
- Kabushiki Kaisha Toshiba
- Makoto Nagamine
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 7,894,246
- Issue date Feb 22, 2011
- Kabushiki Kaisha Toshiba
- Tomomasa Ueda
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory device
- Patent number 7,875,903
- Issue date Jan 25, 2011
- Kabushiki Kaisha Toshiba
- Masahiko Nakayama
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistive effect element and magnetic memory
- Patent number 7,525,837
- Issue date Apr 28, 2009
- Kabushiki Kaisha Toshiba
- Tadashi Kai
- G11 - INFORMATION STORAGE
Information Patent Grant
Magneto-resistive element
- Patent number 7,518,906
- Issue date Apr 14, 2009
- Kabushiki Kaisha Toshiba
- Sumio Ikegawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element
- Patent number 7,518,907
- Issue date Apr 14, 2009
- Kabushiki Kaisha Toshiba
- Masahiko Nakayama
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive effect element and magnetic memory
- Patent number 7,414,880
- Issue date Aug 19, 2008
- Kabushiki Kaisha Toshiba
- Tadashi Kai
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory device
- Patent number 7,411,263
- Issue date Aug 12, 2008
- Kabushiki Kaisha Toshiba
- Masahiko Nakayama
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element
- Patent number 7,355,884
- Issue date Apr 8, 2008
- Kabushiki Kaisha Toshiba
- Masahiko Nakayama
- G11 - INFORMATION STORAGE
Information Patent Grant
Magneto-resistance effect element and magnetic memory
- Patent number 7,266,011
- Issue date Sep 4, 2007
- Kabushiki Kaisha Toshiba
- Minoru Amano
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory device and write method of magnetic memory device
- Patent number 7,245,524
- Issue date Jul 17, 2007
- Kabushiki Kaisha Toshiba
- Hiroaki Yoda
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive random access memory and driving method thereof
- Patent number 7,203,088
- Issue date Apr 10, 2007
- Kabushiki Kaisha Toshiba
- Sumio Ikegawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive effect device, magnetic random access memory, and...
- Patent number 7,193,890
- Issue date Mar 20, 2007
- Kabushiki Kaisha Toshiba
- Toshihiko Nagase
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of manufacturing an image device
- Patent number 7,172,920
- Issue date Feb 6, 2007
- Kabushiki Kaisha Toshiba
- Sumio Ikegawa
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Magneto-resistance effect element and magnetic memory
- Patent number 7,038,939
- Issue date May 2, 2006
- Kabushiki Kaisha Toshiba
- Minoru Amano
- G11 - INFORMATION STORAGE
Information Patent Grant
Infrared ray detecting type imaging device
- Patent number 7,015,472
- Issue date Mar 21, 2006
- Kabushiki Kaisha Toshiba
- Sumio Ikegawa
- H04 - ELECTRIC COMMUNICATION TECHNIQUE

Patents Applicationslast 30 patents

Information Patent Application
MAGNETIC MEMORY
- Publication number 20160055891
- Publication date Feb 25, 2016
- Hisanori AIKAWA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20130181305
- Publication date Jul 18, 2013
- Kabushiki Kaisha Toshiba
- Masahiko Nakayama
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY
- Publication number 20130099337
- Publication date Apr 25, 2013
- Kabushiki Kaisha Toshiba
- Masahiko Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE ELEMENT AND PRODUCING METHOD THEREOF
- Publication number 20130069184
- Publication date Mar 21, 2013
- Kabushiki Kaisha Toshiba
- Hisanori AIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY
- Publication number 20120241884
- Publication date Sep 27, 2012
- Hisanori AIKAWA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20110309418
- Publication date Dec 22, 2011
- KABUSHIKI KAISHA TOSHIBA
- Masahiko NAKAYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE EFFECT ELEMENT
- Publication number 20110254114
- Publication date Oct 20, 2011
- Makoto NAGAMINE
- G01 - MEASURING TESTING
Information Patent Application
MAGNETORESISTIVE ELEMENT
- Publication number 20110116305
- Publication date May 19, 2011
- Makoto Nagamine
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY
- Publication number 20110078538
- Publication date Mar 31, 2011
- Sumio Ikegawa
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- Publication number 20100315864
- Publication date Dec 16, 2010
- KABUSHIKI KAISHA TOSHIBA
- Tomomasa UEDA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE EFFECT MEMORY
- Publication number 20100246244
- Publication date Sep 30, 2010
- Naoharu SHIMOMURA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE EFFECT DEVICE AND MAGNETIC MEMORY
- Publication number 20100080050
- Publication date Apr 1, 2010
- Kabushiki Kaisha Toshiba
- Jyunichi OZEKI
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTANCE-CHANGE MEMORY HAVING RESISTANCE-CHANGE ELEMENT AND MANUF...
- Publication number 20100078763
- Publication date Apr 1, 2010
- Kabushiki Kaisha Toshiba
- Keiji HOSOTANI
- G11 - INFORMATION STORAGE
Information Patent Application
DATA WRITING METHOD FOR MAGNETORESISTIVE EFFECT ELEMENT AND MAGNET...
- Publication number 20100073998
- Publication date Mar 25, 2010
- Masahiko NAKAYAMA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20090244792
- Publication date Oct 1, 2009
- Kabushiki Kaisha Toshiba
- Masahiko NAKAYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE ELEMENT
- Publication number 20090225587
- Publication date Sep 10, 2009
- Makoto Nagamine
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20090224342
- Publication date Sep 10, 2009
- Masahiko NAKAYAMA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETO-RESISTIVE ELEMENT
- Publication number 20090166322
- Publication date Jul 2, 2009
- Sumio Ikegawa
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT
- Publication number 20090140358
- Publication date Jun 4, 2009
- Masahiko Nakayama
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE EFFECT ELEMENT
- Publication number 20080253039
- Publication date Oct 16, 2008
- Makoto NAGAMINE
- G01 - MEASURING TESTING
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- Publication number 20080180859
- Publication date Jul 31, 2008
- Kabushiki Kaisha Toshiba
- Tomomasa UEDA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY DEVICE
- Publication number 20080158740
- Publication date Jul 3, 2008
- Masahiko Nakayama
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC MEMORY
- Publication number 20080130176
- Publication date Jun 5, 2008
- KABUSHHIKI KAISHA TOSHIBA
- Tadashi KAI
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT
- Publication number 20080131732
- Publication date Jun 5, 2008
- Masahiko Nakayama
- G11 - INFORMATION STORAGE
Information Patent Application
Magneto-resistive element
- Publication number 20070070689
- Publication date Mar 29, 2007
- Sumio Ikegawa
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetoresistive effect element and magnetic memory
- Publication number 20070013015
- Publication date Jan 18, 2007
- Tadashi Kai
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetoresistive element
- Publication number 20070014149
- Publication date Jan 18, 2007
- Makoto Nagamine
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic memory device
- Publication number 20070012972
- Publication date Jan 18, 2007
- Masahiko Nakayama
- G11 - INFORMATION STORAGE
Information Patent Application
Method of manufacturing and image device
- Publication number 20060231911
- Publication date Oct 19, 2006
- Sumio Ikegawa
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
Magnetic memory device and write method of magnetic memory device
- Publication number 20060198184
- Publication date Sep 7, 2006
- Hiroaki Yoda
- G11 - INFORMATION STORAGE

Sumio Ikegawa

Person

Patents Grantslast 30 patents

Magnetoresistive element and producing method thereof

Magnetic memory element having an adjustment layer for reducing a l...

Magnetic memory including a magnetoresistive element

Magnetoresistive effect memory

Magnetoresistive effect element and magnetic random access memory

Magneto-resistive element

Magnetic memory

Magnetoresistance effect element and magnetic random access memory

Magnetoresistive effect device and magnetic memory

Magnetoresistive element and magnetic memory

Magnetoresistive element

Data writing method for magnetoresistive effect element and magneti...

Magnetoresistance effect element and magnetic random access memory

Magnetoresistive element

Magnetoresistive element

Magnetoresistive element and magnetic memory

Magnetic memory device

Magnetoresistive effect element and magnetic memory

Magneto-resistive element

Magnetoresistive element

Magnetoresistive effect element and magnetic memory

Magnetic memory device

Magnetoresistive element

Magneto-resistance effect element and magnetic memory

Magnetic memory device and write method of magnetic memory device

Magnetoresistive random access memory and driving method thereof

Magnetoresistive effect device, magnetic random access memory, and...

Method of manufacturing an image device

Magneto-resistance effect element and magnetic memory

Infrared ray detecting type imaging device

Patents Applicationslast 30 patents

MAGNETIC MEMORY

MAGNETORESISTIVE ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY

MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY

MAGNETORESISTIVE ELEMENT AND PRODUCING METHOD THEREOF

MAGNETIC MEMORY

MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY

MAGNETORESISTIVE EFFECT ELEMENT

MAGNETORESISTIVE ELEMENT

MAGNETIC MEMORY

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

MAGNETORESISTIVE EFFECT MEMORY

MAGNETORESISTIVE EFFECT DEVICE AND MAGNETIC MEMORY

RESISTANCE-CHANGE MEMORY HAVING RESISTANCE-CHANGE ELEMENT AND MANUF...

DATA WRITING METHOD FOR MAGNETORESISTIVE EFFECT ELEMENT AND MAGNET...

MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY

MAGNETORESISTIVE ELEMENT

MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY

MAGNETO-RESISTIVE ELEMENT

MAGNETORESISTIVE ELEMENT

MAGNETORESISTIVE EFFECT ELEMENT

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

MAGNETIC MEMORY DEVICE

MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC MEMORY

MAGNETORESISTIVE ELEMENT

Magneto-resistive element

Magnetoresistive effect element and magnetic memory

Magnetoresistive element

Magnetic memory device

Method of manufacturing and image device

Magnetic memory device and write method of magnetic memory device