Sun-Jay Chang

Person

Hsinchu County, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Method of forming a FinFET device by implantation through capping l...
- Patent number 11,532,730
- Issue date Dec 20, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wen-Cheng Lo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming guard ring and circuit device
- Patent number 11,450,735
- Issue date Sep 20, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wan-Yen Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Circuit device including guard ring and method of forming guard ring
- Patent number 10,868,112
- Issue date Dec 15, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wan-Yen Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dislocation SMT for FinFET device
- Patent number 10,727,319
- Issue date Jul 28, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen-Cheng Lo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Rotated STI diode on FinFET technology
- Patent number 10,269,986
- Issue date Apr 23, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sun-Jay Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming guard ring structure
- Patent number 10,128,329
- Issue date Nov 13, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wan-Yen Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for FinFET integrated with capacitor
- Patent number 9,865,592
- Issue date Jan 9, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Hsin Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistor formed on fin structures
- Patent number 9,780,003
- Issue date Oct 3, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Hsin Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High efficiency FinFET diode
- Patent number 9,755,075
- Issue date Sep 5, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsueh-Shih Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device and method
- Patent number 9,679,992
- Issue date Jun 13, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Hsin Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dislocation stress memorization technique for FinFET device
- Patent number 9,570,587
- Issue date Feb 14, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen-Cheng Lo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Guard ring structure and method of forming the same
- Patent number 9,450,044
- Issue date Sep 20, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wan-Yen Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistor formed on fin structures
- Patent number 9,419,087
- Issue date Aug 16, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Hsin Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Rotated STI diode on FinFET technology
- Patent number 9,318,621
- Issue date Apr 19, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sun-Jay Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for FinFET integrated with capacitor
- Patent number 9,305,918
- Issue date Apr 5, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Hsin Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High efficiency FinFET diode
- Patent number 9,293,378
- Issue date Mar 22, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsueh-Shih Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with high breakdown voltage characteristics
- Patent number 9,281,399
- Issue date Mar 8, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Hsin Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device layout for reference and sensor circuits
- Patent number 9,166,067
- Issue date Oct 20, 2015
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jaw-Juinn Horng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High efficiency FinFET diode
- Patent number 9,093,566
- Issue date Jul 28, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsueh-Shih Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device and method
- Patent number 9,076,869
- Issue date Jul 7, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Hsin Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode structures using fin field effect transistor processing and m...
- Patent number 8,946,038
- Issue date Feb 3, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Hsin Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for FinFET integrated with capacitor
- Patent number 8,860,148
- Issue date Oct 14, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Hsin Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device layout for reference and sensor circuits
- Patent number 8,736,355
- Issue date May 27, 2014
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jaw-Juinn Horng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Homo-junction diode structures using fin field effect transistor pr...
- Patent number 8,610,241
- Issue date Dec 17, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Hsin Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for fabricating a strained channel MOSFET device
- Patent number 7,898,028
- Issue date Mar 1, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sun-Jay Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a field-effect transistor having robust sidew...
- Patent number 7,897,501
- Issue date Mar 1, 2011
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chien-Li Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for fabricating a strained channel MOSFET device
- Patent number 7,279,430
- Issue date Oct 9, 2007
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sun-Jay Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for selectively forming strained etch stop layers to improve...
- Patent number 7,220,630
- Issue date May 22, 2007
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kaun-Lun Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS device and method of manufacture
- Patent number 7,190,033
- Issue date Mar 13, 2007
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sun-Jay Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Microelectronic device with depth adjustable sill
- Patent number 7,078,723
- Issue date Jul 18, 2006
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chuan-Yi Lin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR STRUCTURE INCLUDING DEVICES WITH DIFFERENT CHANNEL LE...
- Publication number 20250006505
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzu-Hsiang HSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GUARD RING AND CIRCUIT DEVICE
- Publication number 20220359648
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wan-Yen LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING GUARD RING AND CIRCUIT DEVICE
- Publication number 20210091176
- Publication date Mar 25, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wan-Yen LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dislocation SMT For FinFet Device
- Publication number 20200357900
- Publication date Nov 12, 2020
- Taiwan Semiconductor Manufacturing Company Ltd.
- Wen-Cheng Lo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CIRCUIT DEVICE INCLUDING GUARD RING AND METHOD OF FORMING GUARD RING
- Publication number 20190096990
- Publication date Mar 28, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wan-Yen LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dislocation SMT For FinFet Device
- Publication number 20170154979
- Publication date Jun 1, 2017
- Taiwan Semiconductor Manufacturing Company Ltd.
- Wen-Cheng Lo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar Junction Transistor Formed on Fin Structures
- Publication number 20160358822
- Publication date Dec 8, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Hsin Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING GUARD RING STRUCTURE
- Publication number 20160359000
- Publication date Dec 8, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wan-Yen LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Rotated STI Diode on FinFET Technology
- Publication number 20160211169
- Publication date Jul 21, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sun-Jay Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH EFFICIENCY FINFET DIODE
- Publication number 20160204259
- Publication date Jul 14, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsueh-Shih Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for FinFET Integrated with Capacitor
- Publication number 20160190122
- Publication date Jun 30, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Hsin Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFET Device and Method
- Publication number 20160163835
- Publication date Jun 9, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Hsin Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GUARD RING STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20160056230
- Publication date Feb 25, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wan-Yen LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Efficiency FinFET Diode
- Publication number 20160005660
- Publication date Jan 7, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsueh-Shih Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFET Device and Method
- Publication number 20150270396
- Publication date Sep 24, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Hsin Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICE AND METHOD
- Publication number 20150194524
- Publication date Jul 9, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Hsin Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dislocation SMT For FinFET Device
- Publication number 20150179771
- Publication date Jun 25, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen-Cheng Lo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar Junction Transistor Formed on Fin Structures
- Publication number 20150123246
- Publication date May 7, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Hsin Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FINFET INTEGRATED WITH CAPACITOR
- Publication number 20140377928
- Publication date Dec 25, 2014
- Chia-Hsin Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Rotated STI Diode on FinFET Technology
- Publication number 20140252476
- Publication date Sep 11, 2014
- Sun-Jay Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH EFFICIENCY FINFET DIODE
- Publication number 20140183641
- Publication date Jul 3, 2014
- TAIWAN SEMICONDUCTOR MANUFACTURING COMAPNY, LTD.
- Hsueh-Shih Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE LAYOUT FOR REFERENCE AND SENSOR CIRCUITS
- Publication number 20140077230
- Publication date Mar 20, 2014
- Taiwan Semiconductor Manufacturing Co., LTD
- Jaw-Juinn HORNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIODE STRUCTURES USING FIN FIELD EFFECT TRANSISTOR PROCESSING AND M...
- Publication number 20140077331
- Publication date Mar 20, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Hsin HU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE LAYOUT FOR REFERENCE AND SENSOR CIRCUITS
- Publication number 20130328614
- Publication date Dec 12, 2013
- Taiwan Semiconductor Manufacturing Co., LTD
- Jaw-Juinn HORNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HOMO-JUNCTION DIODE STRUCTURES USING FIN FIELD EFFECT TRANSISTOR PR...
- Publication number 20130328162
- Publication date Dec 12, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Hsin HU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR FINFET INTEGRATED WITH CAPACITOR
- Publication number 20130270620
- Publication date Oct 17, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Hsin Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DISLOCATION SMT FOR FINFET DEVICE
- Publication number 20130200455
- Publication date Aug 8, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen-Cheng Lo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SEMICONDUCTOR DEVICE
- Publication number 20080268602
- Publication date Oct 30, 2008
- Taiwan Semiconductor Manufacturing Co., LTD
- Chien-Li Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for Fabricating a Strained Channel MOSFET Device
- Publication number 20070290277
- Publication date Dec 20, 2007
- Sun-Jay Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for fabricating a strained channel MOSFET device
- Publication number 20060040503
- Publication date Feb 23, 2006
- Sun-Jay Chang
- H01 - BASIC ELECTRIC ELEMENTS

Sun-Jay Chang

Person

Patents Grantslast 30 patents

Method of forming a FinFET device by implantation through capping l...

Method of forming guard ring and circuit device

Circuit device including guard ring and method of forming guard ring

Dislocation SMT for FinFET device

Rotated STI diode on FinFET technology

Method of forming guard ring structure

Method for FinFET integrated with capacitor

Bipolar junction transistor formed on fin structures

High efficiency FinFET diode

FinFET device and method

Dislocation stress memorization technique for FinFET device

Guard ring structure and method of forming the same

Bipolar junction transistor formed on fin structures

Rotated STI diode on FinFET technology

Method for FinFET integrated with capacitor

High efficiency FinFET diode

FinFET with high breakdown voltage characteristics

Device layout for reference and sensor circuits

High efficiency FinFET diode

FinFET device and method

Diode structures using fin field effect transistor processing and m...

Structure and method for FinFET integrated with capacitor

Device layout for reference and sensor circuits

Homo-junction diode structures using fin field effect transistor pr...

Process for fabricating a strained channel MOSFET device

Method of fabricating a field-effect transistor having robust sidew...

Process for fabricating a strained channel MOSFET device

Method for selectively forming strained etch stop layers to improve...

CMOS device and method of manufacture

Microelectronic device with depth adjustable sill

Patents Applicationslast 30 patents

SEMICONDUCTOR STRUCTURE INCLUDING DEVICES WITH DIFFERENT CHANNEL LE...

GUARD RING AND CIRCUIT DEVICE

METHOD OF FORMING GUARD RING AND CIRCUIT DEVICE

Dislocation SMT For FinFet Device

CIRCUIT DEVICE INCLUDING GUARD RING AND METHOD OF FORMING GUARD RING

Dislocation SMT For FinFet Device

Bipolar Junction Transistor Formed on Fin Structures

METHOD OF FORMING GUARD RING STRUCTURE

Rotated STI Diode on FinFET Technology

HIGH EFFICIENCY FINFET DIODE

Method for FinFET Integrated with Capacitor

FinFET Device and Method

GUARD RING STRUCTURE AND METHOD OF FORMING THE SAME

High Efficiency FinFET Diode

FinFET Device and Method

FINFET DEVICE AND METHOD

Dislocation SMT For FinFET Device

Bipolar Junction Transistor Formed on Fin Structures

METHOD FOR FINFET INTEGRATED WITH CAPACITOR

Rotated STI Diode on FinFET Technology

HIGH EFFICIENCY FINFET DIODE

DEVICE LAYOUT FOR REFERENCE AND SENSOR CIRCUITS

DIODE STRUCTURES USING FIN FIELD EFFECT TRANSISTOR PROCESSING AND M...

DEVICE LAYOUT FOR REFERENCE AND SENSOR CIRCUITS

HOMO-JUNCTION DIODE STRUCTURES USING FIN FIELD EFFECT TRANSISTOR PR...

STRUCTURE AND METHOD FOR FINFET INTEGRATED WITH CAPACITOR

DISLOCATION SMT FOR FINFET DEVICE

METHOD OF FABRICATING SEMICONDUCTOR DEVICE

Process for Fabricating a Strained Channel MOSFET Device

Process for fabricating a strained channel MOSFET device