Sung Dae Suk

Person

Watervliet, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Upper and lower gate configurations of monolithic stacked FinFET tr...
- Patent number 12,363,990
- Issue date Jul 15, 2025
- International Business Machines Corporation
- Chen Zhang
Information Patent Grant
Three-dimensional, monolithically stacked field effect transistors...
- Patent number 12,148,833
- Issue date Nov 19, 2024
- International Business Machines Corporation
- Sung Dae Suk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned bottom spacer epi last flow for VTFET
- Patent number 11,923,434
- Issue date Mar 5, 2024
- International Business Machines Corporation
- Tao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional, monolithically stacked field effect transistors...
- Patent number 11,817,501
- Issue date Nov 14, 2023
- International Business Machines Corporation
- Sung Dae Suk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around devices with isolated and non-isolated epitaxy regi...
- Patent number 11,688,741
- Issue date Jun 27, 2023
- International Business Machines Corporation
- Andrew M. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Confined gate recessing for vertical transport field effect transis...
- Patent number 11,476,163
- Issue date Oct 18, 2022
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked gate structures
- Patent number 11,282,838
- Issue date Mar 22, 2022
- International Business Machines Corporation
- Chen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned bottom spacer EPI last flow for VTFET
- Patent number 11,177,367
- Issue date Nov 16, 2021
- International Business Machines Corporation
- Tao Li
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
THREE-DIMENSIONAL, MONOLITHICALLY STACKED FIELD EFFECT TRANSISTORS...
- Publication number 20240014322
- Publication date Jan 11, 2024
- International Business Machines Corporation
- Sung Dae Suk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UPPER AND LOWER GATE CONFIGURATIONS OF MONOLITHIC STACKED FINFET TR...
- Publication number 20230215949
- Publication date Jul 6, 2023
- International Business Machines Corporation
- Chen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FIELD EFFECT TRANSISTORS
- Publication number 20230178549
- Publication date Jun 8, 2023
- International Business Machines Corporation
- Sung Dae SUK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Single Process Double Gate and Variable Threshold Voltage MOSFET
- Publication number 20230147329
- Publication date May 11, 2023
- International Business Machines Corporation
- Sung Dae Suk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL, MONOLITHICALLY STACKED FIELD EFFECT TRANSISTORS...
- Publication number 20230086967
- Publication date Mar 23, 2023
- International Business Machines Corporation
- Sung Dae Suk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAIN GENERATION AND ANCHORING IN GATE-ALL-AROUND FIELD EFFECT TRA...
- Publication number 20230065970
- Publication date Mar 2, 2023
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FET WITH DIFFERENT CHANNEL MATERIALS
- Publication number 20220406776
- Publication date Dec 22, 2022
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND DEVICES WITH ISOLATED AND NON-ISOLATED EPITAXY REGI...
- Publication number 20220310602
- Publication date Sep 29, 2022
- International Business Machines Corporation
- Andrew M. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED GATE STRUCTURES
- Publication number 20220013521
- Publication date Jan 13, 2022
- International Business Machines Corporation
- Chen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED BOTTOM SPACER EPI LAST FLOW FOR VTFET
- Publication number 20220005935
- Publication date Jan 6, 2022
- International Business Machines Corporation
- Tao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONFINED GATE RECESSING FOR VERTICAL TRANSPORT FIELD EFFECT TRANSIS...
- Publication number 20210327759
- Publication date Oct 21, 2021
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED BOTTOM SPACER EPI LAST FLOW FOR VTFET
- Publication number 20210217871
- Publication date Jul 15, 2021
- International Business Machines Corporation
- Tao Li
- H01 - BASIC ELECTRIC ELEMENTS

Sung Dae Suk

Person

Patents Grantslast 30 patents

Upper and lower gate configurations of monolithic stacked FinFET tr...

Three-dimensional, monolithically stacked field effect transistors...

Self-aligned bottom spacer epi last flow for VTFET

Three-dimensional, monolithically stacked field effect transistors...

Gate-all-around devices with isolated and non-isolated epitaxy regi...

Confined gate recessing for vertical transport field effect transis...

Stacked gate structures

Self-aligned bottom spacer EPI last flow for VTFET

Patents Applicationslast 30 patents

THREE-DIMENSIONAL, MONOLITHICALLY STACKED FIELD EFFECT TRANSISTORS...

UPPER AND LOWER GATE CONFIGURATIONS OF MONOLITHIC STACKED FINFET TR...

STACKED FIELD EFFECT TRANSISTORS

Single Process Double Gate and Variable Threshold Voltage MOSFET

THREE-DIMENSIONAL, MONOLITHICALLY STACKED FIELD EFFECT TRANSISTORS...

STRAIN GENERATION AND ANCHORING IN GATE-ALL-AROUND FIELD EFFECT TRA...

STACKED FET WITH DIFFERENT CHANNEL MATERIALS

GATE-ALL-AROUND DEVICES WITH ISOLATED AND NON-ISOLATED EPITAXY REGI...

STACKED GATE STRUCTURES

SELF-ALIGNED BOTTOM SPACER EPI LAST FLOW FOR VTFET

CONFINED GATE RECESSING FOR VERTICAL TRANSPORT FIELD EFFECT TRANSIS...

SELF-ALIGNED BOTTOM SPACER EPI LAST FLOW FOR VTFET