Sung-Taeg Kang

Person

Palo Alto, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of forming high-voltage transistor with thin gate poly
- Patent number 12,029,041
- Issue date Jul 2, 2024
- Infineon Technologies LLC
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming high-voltage transistor with thin gate poly
- Patent number 11,690,227
- Issue date Jun 27, 2023
- Cypress Semiconductor Corporation
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistance reduction for word lines in memory arrays
- Patent number 11,587,874
- Issue date Feb 21, 2023
- Intel Corporation
- Sung-Taeg Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded non-volatile memory device and fabrication method of the same
- Patent number 10,872,898
- Issue date Dec 22, 2020
- Cypress Semiconductor Corporation
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split-gate flash cell formed on recessed substrate
- Patent number 10,497,710
- Issue date Dec 3, 2019
- Cypress Semiconductor Corporation
- Sung-Taeg Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming high-voltage transistor with thin gate poly
- Patent number 10,242,996
- Issue date Mar 26, 2019
- Cypress Semiconductor Corporation
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split-gate flash cell formed on recessed substrate
- Patent number 9,853,039
- Issue date Dec 26, 2017
- Cypress Semiconductor Corporation
- Sung-Taeg Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split-gate flash cell formed on recessed substrate
- Patent number 9,818,755
- Issue date Nov 14, 2017
- Cypress Semiconductor Corporation
- Sung-Taeg Kang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HIGH-VOLTAGE TRANSISTOR WITH THIN HIGH-K METAL GATE AND METHOD OF F...
- Publication number 20240206183
- Publication date Jun 20, 2024
- CYPRESS SEMICONDUCTOR CORPORATION
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming High-Voltage Transistor with Thin Gate Poly
- Publication number 20240008279
- Publication date Jan 4, 2024
- CYPRESS SEMICONDUCTOR CORPORATION
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming High-Voltage Transistor with Thin Gate Poly
- Publication number 20210296343
- Publication date Sep 23, 2021
- CYPRESS SEMICONDUCTOR CORPORATION
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTANCE REDUCTION FOR WORD LINES IN MEMORY ARRAYS
- Publication number 20210265278
- Publication date Aug 26, 2021
- Intel Corporation
- Sung-Taeg Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED NON-VOLATILE MEMORY DEVICE AND FABRICATION METHOD OF THE SAME
- Publication number 20210134811
- Publication date May 6, 2021
- CYPRESS SEMICONDUCTOR CORPORATION
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming High-Voltage Transistor with Thin Gate Poly
- Publication number 20190304990
- Publication date Oct 3, 2019
- CYPRESS SEMICONDUCTOR CORPORATION
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming High-Voltage Transistor with Thin Gate Poly
- Publication number 20190027487
- Publication date Jan 24, 2019
- CYPRESS SEMICONDUCTOR CORPORATION
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED NON-VOLATILE MEMORY DEVICE AND FABRICATION METHOD OF THE SAME
- Publication number 20190027484
- Publication date Jan 24, 2019
- CYPRESS SEMICONDUCTOR CORPORATION
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Split-Gate Flash Cell formed on Recessed Substrate
- Publication number 20180166458
- Publication date Jun 14, 2018
- CYPRESS SEMICONDUCTOR CORPORATION
- Sung-Taeg Kang
- H01 - BASIC ELECTRIC ELEMENTS

Sung-Taeg Kang

Person

Patents Grantslast 30 patents

Method of forming high-voltage transistor with thin gate poly

Method of forming high-voltage transistor with thin gate poly

Resistance reduction for word lines in memory arrays

Embedded non-volatile memory device and fabrication method of the same

Split-gate flash cell formed on recessed substrate

Method of forming high-voltage transistor with thin gate poly

Split-gate flash cell formed on recessed substrate

Split-gate flash cell formed on recessed substrate

Patents Applicationslast 30 patents

HIGH-VOLTAGE TRANSISTOR WITH THIN HIGH-K METAL GATE AND METHOD OF F...

Method of Forming High-Voltage Transistor with Thin Gate Poly

Method of Forming High-Voltage Transistor with Thin Gate Poly

RESISTANCE REDUCTION FOR WORD LINES IN MEMORY ARRAYS

EMBEDDED NON-VOLATILE MEMORY DEVICE AND FABRICATION METHOD OF THE SAME

Method of Forming High-Voltage Transistor with Thin Gate Poly

Method of Forming High-Voltage Transistor with Thin Gate Poly

EMBEDDED NON-VOLATILE MEMORY DEVICE AND FABRICATION METHOD OF THE SAME

Split-Gate Flash Cell formed on Recessed Substrate